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차세대 레이더용 C-/X-/Ku-대역 GaN 집적회로 기술 동향
안호균,이상흥,김성일,노윤섭,장성재,정현욱,임종원,Ahn, H.K.,Lee, S.H.,Kim, S.I.,Noh, Y.S.,Chang, S.J.,Jung, H.U.,Lim, J.W. 한국전자통신연구원 2022 전자통신동향분석 Vol.37 No.5
GaN (Gallium-Nitride) is a promising candidate material in various radio frequency applications due to its inherent properties including wide bandgap, high carrier concentration, and high electron mobility/saturation velocity. Notably, AlGaN/GaN heterostructure field effect transistor exhibits high operating voltage and high power-density/power at high frequency. In next-generation radar systems, GaN power transistors and monolithic microwave integrated circuits (MMICs) are significant components of transmitting and receiving modules. In this paper, we introduce technological trends for C-/X-/Ku-band GaN MMICs including power amplifiers, low noise amplifiers and switch MMICs, focusing on the status of GaN MMIC fabrication technology and GaN foundry service. Additionally, we review the research for the localization of C-/X-/Ku-band GaN MMICs using in-house GaN transistor and MMIC fabrication technology. We also discuss the results of C-/X-/Ku-band GaN MMICs developed at Defense Materials and Components Convergence Research Department in ETRI.