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다공성 원료를 사용한 수열합성 패널의 물성과 포름알데히드 흡착 특성
임두혁,추용식,송훈,이종규,Im, Du-Hyuk,Chu, Yong-Sik,Song, Hoon,Lee, Jong-Kyu 한국세라믹학회 2009 한국세라믹학회지 Vol.46 No.6
Formaldehyde emissions from the construct was harmful to human. Diatomite, bentonite and zeolite were used as porous materials for fabricating panels. Formaldehyde adsorption and physical characteristics of porous materials were investigated and hydrothermal method was applied to fabricate panels. Formaldehyde adsorption contents of panels with porous materials were higher than that of panel without porous materials. The panels with Cheolwon diatomite and Pohang zeolite showed excellent characteristics of Formaldehyde adsorption. These characteristics were caused by higher surface area and pore volume of porous materials. Formaldehyde adsorption contents were influenced by surface area and pore volume of panels. Correlation coefficient between surface area and Formaldehyde adsorption content of panels was 0.87. The panels with porous materials had higher strength than that without porous materials because of bridging role particles.
추용식,서성관,임두혁,송훈,이종규,이승호,Chu, Yong-Sik,Seo, Sung-Kwan,Im, Du-Hyuk,Song, Hun,Lee, Jong-Kyu,Lee, Seung-Ho 한국세라믹학회 2011 한국세라믹학회지 Vol.48 No.6
Raw mix of molten clinker was fabricated using blast furnace slag as starting material. Raw mix was melted at 1620$^{\circ}C$ for molten clinker fabrication. It was found that molten clinker contained alite and belite equivalent to OPC clinker mineral by optical microscope and SEM. The size of alite was 10~50 ${\mu}m$ and that of belite was 20~80 ${\mu}m$. This result thought to be attributed low $Al_2O_3$ content and cooling condition. Interstitial phase increased with blast furnace slag content and gehlenite was formed by the condition of LSF and SM. So raw mix with 27~41% blast furnace slag could be converted into cement clinker by appropriate choice of melting andcooling methods in this study.
고로(高爐)슬래그로 부터 제조(製造)된 용융(溶融)클링커의 광물조성(鑛物組成)과 색도특성(色度特性)
추용식,서성관,임두혁,송훈,이종규,이승호,Chu, Yong-Sik,Seo, Sung-Kwan,Im, Du-Hyuk,Song, Hun,Lee, Jong-Kyu,Lee, Seung-Ho 한국자원리싸이클링학회 2011 資源 리싸이클링 Vol.20 No.6
용융클링커 제조용 혼합원료 중의 하나로 고로슬래그를 사용하였다. 고로슬래그를 사용한 혼합원료는 용융클링커 제조를 위해 1620에서 용융하였다. 냉각된 클링커는 XRD 패턴으로 클링커 광물의 생성여부를, 색도분석기로 색도를 분석하였다. 용융클링커는 XRD 분석을 통해 OPC 광물과 동등의 클링커 광물을 포함하고 있다는 것을 확인할 수 있었다. 용융시멘트는 OPC보다 백색도가 높아, 색상이 OPC보다 옅게 관찰되었다. 용융시멘트의 LSF 및 SM이 높아짐에 따라 백색도는 낮아졌다. 또한 슬래그를 용융시켜 제조한 시멘트 클링커는 고로 슬래그시멘트보다 백색도가 높았다. Raw mix of molten clinker was fabricated using blast furnace slag as starting material. Raw mix was melted at 1620 for molten clinker fabrication. Color and mineral composition of molten clinker was investigated by XRD and colorimeter. It was found that the molten clinker contains alite and belite equivalent to OPC clinker mineral and shows higher whiteness value than that of OPC. Whiteness of the molten clinker decreased with LSF and SM. Also the whiteness value of the slag cement using molten clinker was higher than that of common slag cement.
서성관,추용식,송훈,이종규,임두혁,Seo, Sung-Kwan,Chu, Yong-Sik,Song, Hun,Lee, Jong-Kyu,Im, Du-Hyuk 한국세라믹학회 2011 한국세라믹학회지 Vol.48 No.6
ALC(Autoclaved Lightweight Concrete) is produced using quartz sand, lime and cement and water. And aluminum powder is used for blowing agent. ALC is manufactured by autoclave chamber under high-temperature and high-pressure. Generally, ALC is 1/4 levels lighter than concrete and mortar, because it has a lot of pores. So density of ALC is about 0.45~0.65 g/$cm^3$. But, ALC has a weakness, typically low strength, with its porous structure. So, it is necessary to excellent strength properties for extensive apply of ALC materials in high porosity. In this study, melamine resin was used to improve the strength characteristics of ALC materials. We performed compressive and bending strength measurements. Compressive strength of ALC with 2% melamine resin increased 26.88% than 'melamine-free' ALC. Also we performed functionality evaluation such as thermal conductivity, sound absorption, and flame-resistance.
차세대 웨어러블 전자시스템용 실리콘 나노선 트랜지스터 연구
임경민,김민석,김윤중,임두혁,김상식,Im, Kyeungmin,Kim, Minsuk,Kim, Yoonjoong,Lim, Doohyeok,Kim, Sangsig 한국진공학회 2016 진공 이야기 Vol.3 No.3
In future wearable electronic systems, 3-dimensional (3D) devices have attracted much attention due to their high density integration and low-power functionality. Among 3D devices, gate-all-around (GAA) nanowire transistor provides superior gate controllability, resulting in suppressing short channel effect and other drawbacks in 2D metal-oxide-semiconductor field-effect transistor (MOSFET). Silicon nanowires (SiNWs) are the most promising building block for GAA structure device due to their compatibility with the current Si-based ultra large scale integration (ULSI) technology. Moreover, the theoretical limit for subthreshold swing (SS) of MOSFET is 60 mV/dec at room temperature, which causes the increase in Ioff current. To overcome theoretical limit for the SS, it is crucial that research into new types of device concepts should be performed. In our present studies, we have experimentally demonstrated feedback FET (FBFET) and tunnel FET (TFET) with sub-60 mV/dec based on SiNWs. Also, we fabricated SiNW based complementary TFET (c-TFET) and SiNW complementary metal-oxide-semiconductor (CMOS) inverter. Our research demonstrates the promising potential of SiNW electronic devices for future wearable electronic systems.
Gate Overlap에 따른 나노선 CMOS Inverter 특성 연구
유제욱(Jeuk Yoo),김윤중(Yoonjoong Kim),임두혁(Doohyeok Lim),김상식(Sangsig Kim) 대한전기학회 2017 전기학회논문지 Vol.66 No.10
In this study, we investigate the influence of an overlap between the gate and source/drain regions of silicon nanowire (SiNW) CMOS (complementary metal-oxide-semiconductor) inverter on bendable plastic substrates and describe their electrical characteristics. The combination of n-channel silicon nanowire field-effect transistor (n-SiNWFET) and p-channel silicon nanowire field-effect transistor (p-SiNWFET) operates as an inverter logic gate. The gains with a drain voltage (Vdd) of 1 V are 3.07 and 1.21 for overlapped device and non-overlapped device, respectively. The superior electrical characteristics of each of the SiNW transistors including steep subthreshold slopes and the high Ion/Ioff ratios are major factors that enable the excellent operation of the logic gate.