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조사료 급여수준이 유우의 유생산과 유지방 생산에 미치는 영향
남기홍,육종융 한국축산학회 1977 한국축산학회지 Vol.19 No.2
The effect of roughage level on milk yield, milk fat content, and lice weight were studied by using 3×3 latin square experimental design. Three different roughage levels have been tested with the following proportions of roughage per body weight in forage basis: Treatment A(3%), Treatment B(5%), Treatment C(7%). The results obtained are as follows: 1. Dry matter intake per day during the experimental period among three treatments showed little difference. 2. The animals in treatment A tended to give higher fat content than those in treatment B or C, but the difference was not significant statistically. 3. The cows in treatment C gave the milk of higher fat content than those in treatment A or B, but the difference was not significant statistically. 4. Cows did not show any difference in the solids-not-fat content of the milk they produced. 5. Treatment A gave the mast increase in body weight followed by treatment B, and treatment C gave the least increase in body weight during the experimental period, but the difference was not significant.
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ZnS:Mn과 ZnS:Ag를 적층한 TFELD의 제작과 그 특성
南基泓 慶一大學校 1999 論文集 Vol.16 No.5
ZnS:Mn 과 ZnS:Ag형광제을 적충시키고, BST(barium strontium titanate) 강유전체 박막을 이용하여 백색발광소자를 제작하였다. ZnS:Mn 과 ZnS:Ag는 각각 ZnS에 Mn 0.8wt% 와 Ag 1wt%를 혼합하여 pellet으로 만들고, 이를 이용하여 박막을 만들었다. BST박막은 4" Ba?Sr?TiO₃타켓을 사용하여 기판온도 400 ℃, 분위기압 30 mtorr 그리고 Ar:02의 비를 9:1로 해서 제작하였다. 형광충, 상, 하부정연층이 각각 500, 400 및 20nm일 때 발광문턱전압은 95V?였고, 최고 휘도는 150 V?에서 3000 cd/m²이었다. A violet colored thin film electroluminescent devices were fabricated with ZnS:Mn and ZnS:Ag for phosphor layers and BST ferroelectric thin film for insulating layers. The fabrication condijtions of BST thin film were followings, that is : stoichiometry of tatget, substrate temperature, working pressure and the ratio of argon and oxygen gas were Ba?Sr?TiO₃400℃, 30 mtorr andd 9:1, respectively. For the phosphor layer, ZnS:Mn and ZnS:Ag were used. The thickness of phosphor, upper and lower insulating layer were 500, 400 and 20nm, respectively. And the threshold voltage of luminescence and maximum brightness of this device were 95V? and 3,000 cd/m³at 150 V? respectively.
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CO가스에 대한 SnO₂가스 檢知素子의 製造 및 그 特性
남기홍 慶北工業專門大學 1981 論文集 Vol.18 No.-
CO gas sensors were fabricated by firing the mixture of SnO₂and 5 wt.% Th(NO₃)₄. Their electrical properties and sensitivity characteristics to gases have been investigated. The mixture of 95wt.% SnO₂ and 5 wt.% Th(NO₃)₄ fired at 600℃ for 1 hour showed the highest sensitivity to CO gas. Since the devices are solid and have good sensitivity to CO gas, it is suggested that they could be used as the elements of CO gas detecting apparatus.
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RF반응성 스퍼터링법으로 증착한 Ta2O5박막의 열처리 효과
남기홍 경일대학교 산업기술연구소 1993 産業技術硏究所 論文集 Vol.3 No.-
반도체 메모리소자의 유전체 및 각종 센서재료를 사용되고 있는 Ta2O5박막을 Rf 반응성 스퍼터링법으로 증착하고, 막의 열처리 조건에 딸흔 전기적.물리적 특성 변화를 조사하였다. 막 증착시 플라즈마 분위기가스인 아르곤과 산소의 혼입비가 4:1 SCCM에서 AES 및 균 분석 결과 가장 좋은 화학양론적 조성비를 나타내었으며, 열처리온도에 따른 tA2o5 박막의 결정구조는 XTJS 회절분석 결과 500C이하에서는 비정질구조를 나타내었고, 600C 부근에서 다결정질로 바뀌기 시작하여 700C에서는 완전한 Ta2O5 구조를 나타내었다. 그리고 열처리조건에 따른 Ta2O5 박막의 유전상수값 변화는 약?=15-25였다. 막의 열처리온도가 높아짐에 따라 누설전류도 증가하였다. Ta2O5 thin film, which has beem used for dielectric material of semiconductor memory devices and sensors material etc., was deposited by RF reactive sputtering . The electric and physical properties of the Ta2O5 film were investigated according to the annealing conditions. The optimum stoichiometric structure was obtained when Ar: O2 gas mixture was 4:1 SCCM during the film deposition. The XRD pattern showed that the crystal structure of the Ta2O5 thin film was amorphous when the annealing temperature was less than 500C and was ?-Ta2O5 poly-crystal at 700C. The dielectric constant was changed from 15 to 25 for annealing conditions. The leckage current of the Ta2O5 thin film was increased as temperature was increased.
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南基泓 慶一大學校 1999 論文集 Vol.16 No.2
고주파 마그네트론 스퍼터링 방법으로 LiNbO₃박막을 제작하였다. 기판온도를 변화하여 박막의 성장조건에 따른 구조적, 전기적 성질을 연구하였다. 전기적특성 측정을 위해 사용한 Pt/Ti 하부전극 역시 마그네트론 스퍼터링 으로 증착하였다. LiNbO₃박막의 성장을 위한 최적의 스퍼터링 조건은 고주파 전력 100 W, 공정압력 1mTorr. 그리고 기판온도 580 ℃이다. 성장된 박막은 (012) 방향으로 우선 배향되었다. 최적의 조건에서 성장된 LiNbO₃박막의 유전율은 1 ㎒에서 55였다. LiNbO₃films were prepared by an rf-magnetron sputtering technique. Structural and electrical properites of thin films was investigated as a function of deposition temperature. Optimum sputtering conditions were rf power of 100 W, working pressure of 1 mTorr and substrate temperature of 580℃. The thin film was grown to (012) preferred orientation. The dielectric of the thin film LiNbO₃fabricated under optimum condition was 55 at 1 MHz.
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南基泓 慶一大學校 1991 論文集 Vol.7 No.1
The green EL lamp have been fabricated by thick film screen printing method. The thickness of BaTiO₃dielectric layer and ZnS:Cu phosphor layer was 20㎛ and 40㎛ respectively. The threshold voltage of green EL lamp was 50V?? and the maximum brightness was 13.5μW/㎤ at frequency of green EL lamp was 700Hz and the AC current was increased lineary by input voltage and frequency. The peak wavelength and full width half maximum (FWHM) was 5100Å and 1100Å respectively. From the result, the green EL lamp will be applicable to LCD back light and other light systems.
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