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Practical Synthesis of Alkoxyamine Initiators for Living Radical Polymerization
문봉진,강민혁 한국고분자학회 2005 Macromolecular Research Vol.13 No.3
Various alkoxyamine initiators for nitroxide mediated radical polymerization (NMRP) were prepared in high yields by a simple substitution reaction of nitroxide anions with benzyl bromide. The required nitroxide anions were easily generated by treating either nitroxide free radicals or hydroxy amine with an alkali metal such as sodium or potassium in THF. This method is both practical and efficient, since the ionic conditions prevent other side reac tions from occurring, such as the self-coupling or oligomerization reactions that are observed in the case of radical trapping conditions. To demonstrate the utility of the resulting alkoxyamine initiators, end- and telechelic-alkoxyamine PEG macroinitiators derived from the alkoxyamines were synthesized by a simple chemical modifica tion, and used for the preparation of PEG-b-PS and PS-b-PEG-b-PS block copolymers by NMRP.
Pt(111)과 Re(111) 표면 위에서 Pd 박막이 갖는 독특한 전자구조
문봉진 한양대학교 이학기술연구소 2008 이학기술논문지 Vol.12 No.-
Re(111) 표면과 Pd(111)표면 위에서의 Pd 박막이 지니는 DOS를 광전자 분광학으로 연구하였다. Pt(111) 위의 Pd 단층 DOS는 Pt표면에서의 것과 매우 비슷한 현상을 보여는 반면에, Re(111)위의 Pd 단층은 Re 위에서의 것과 현저히 다른 DOS 배열을 보이고 있음이 발견되었다. 각 DOS의 d-영역 중심에 대한 정보를 근거로 하여 Pd 박막과 그 표면 사이의 상호작용이 연구되었다. The density of states (DOS) of Pd thin films on Re(111) and Pd(111) surfaces are studied with valence band photoemission spectroscopy. While DOS of Pd monolayer on Pt(111) shows very similar to one from Pt surface, the monolayer of Pd on Re(111) produces very different DOS distribution from Re substrate. With the information on the d-band center of each DOS, the interaction between Pd thin films and its substrates is investigated.
Effect of Interfacial Strain in Wet Oxidation Kinetics on Si(100)
문봉진,Massimiliano Rossi,Yoshiharu Enta 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.58 No.41
Ambient pressure X-ray photoelectron spectroscopy is utilized to study the kinetics of the wet oxidation process on a Si(100) surface. The kinetics of each individual oxidation state is monitored as a function of temperature. The role of possible strain at the interfacial reaction in the oxidation kinetics is probed with an alternating wet and dry oxidation process.