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Effect of Interfacial Strain in Wet Oxidation Kinetics on Si(100)
문봉진,Massimiliano Rossi,Yoshiharu Enta 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.58 No.41
Ambient pressure X-ray photoelectron spectroscopy is utilized to study the kinetics of the wet oxidation process on a Si(100) surface. The kinetics of each individual oxidation state is monitored as a function of temperature. The role of possible strain at the interfacial reaction in the oxidation kinetics is probed with an alternating wet and dry oxidation process.