http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
DC 마그네트론 스퍼터링 방법을 이용하여 증착한 IGZO 박막트랜지스터의 특성
김성연,명재민,Kim, Sung-Yeon,Myoung, Jae-Min 한국재료학회 2009 한국재료학회지 Vol.19 No.1
Indium Gallium Zinc Oxide (IGZO) thin films were deposited onto 300 nm-thick oxidized Si substrates and glass substrates by direct current (DC) magnetron sputtering of IGZO targets at room temperature. FESEM and XRD analyses indicate that non-annealed and annealed IGZO thin films exhibit an amorphous structure. To investigate the effect of an annealing treatment, the films were thermally treated at $300^{\circ}C$ for 1hr in air. The IGZO TFTs structure was a bottom-gate type in which electrodes were deposited by the DC magnetron sputtering of Ti and Au targets at room temperature. The non-annealed and annealed IGZO TFTs exhibit an $I_{on}/I_{off}$ ratio of more than $10^5$. The saturation mobility and threshold voltage of nonannealed IGZO TFTs was $4.92{\times}10^{-1}cm^2/V{\cdot}s$ and 1.46V, respectively, whereas these values for the annealed TFTs were $1.49{\times}10^{-1}cm^2/V{\cdot}$ and 15.43V, respectively. It is believed that an increase in the surface roughness after an annealing treatment degrades the quality of the device. The transmittances of the IGZO thin films were approximately 80%. These results demonstrate that IGZO thin films are suitable for use as transparent thin film transistors (TTFTs).
상온 강자성 (Ga,Mn)N 박막을 이용한 질화물계 스핀 발광소자의 스핀편극된 빛의 발광
함문호,명재민,Ham, Moon-Ho,Myoung, Jae-Min 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.11
We investigated the fabrication and characteristics of the nitride-based spin-polarized LEDs with room-temperature ferromagnetic (Ga,Mn)N layer as a spin injection source. The (Ga,Mn)N thin films having room-temperature ferromagnetic ordering were found to exhibit the negative MR and anomalous Hall resistance up to room temperature, revealing the existence of spin-polarized electrons in (Ga,Mn)N films at room temperature. The electrical characteristics in the spin LEDs did not degraded in spite of the insertion of the (Ga,Mn)N layer into the LED structure. In EL spectra of the spin LEDs, it is confirmed that the devices produce intense EL emission at 7 K as well as room temperature. These results are expected to open up new opportunities to realize room-temperature operating semiconductor spintronic devices.
ZnO 나노선과 P3HT 폴리머를 이용한 유/무기 복합체 TFT 소자
문경주,최지혁,명재민,Moon, Kyeong-Ju,Choi, Ji-Hyuk,Kar, Jyoti Prakash,Myoung, Jae-Min 한국재료학회 2009 한국재료학회지 Vol.19 No.1
Inorganic-organic composite thin-film-transistors (TFTs) of ZnO nanowire/Poly(3-hexylthiophene) (P3HT) were investigated by changing the nanowire densities inside the composites. Crystalline ZnO nanowires were synthesized via an aqueous solution method at a low temperature, and the nanowire densities inside the composites were controlled by changing the ultrasonifiaction time. The channel layers were prepared with composites by spin-coating at 2000 rpm, which was followed by annealing in a vacuum at $100^{\circ}C$ for 10 hours. Au/inorganic-organic composite layer/$SiO_2$ structures were fabricated and the mobility, $I_{on}/I_{off}$ ratio, and threshold voltage were then measured to analyze the electrical characteristics of the channel layer. Compared with a P3HT TFT, the electrical properties of TFT were found to be improved after increasing the nanowire density inside the composites. The mobility of the P3HT TFT was approximately $10^{-4}cm^2/V{\cdot}s$. However, the mobility of the ZnO nanowire/P3HT composite TFT was increased by two orders compared to that of the P3HT TFT. In terms of the $I_{on}/I_{off}$ ratio, the composite device showed a two-fold increase compared to that of the P3HT TFT.
ZnO 나노 막대 성장을 위한 기판층으로서 hexagonal β상 Ni(OH)<sub>2</sub> 나노 시트 합성 및 미세구조 분석
황성환,이태일,최지혁,명재민,Hwang, Sung-Hwan,Lee, Tae-Il,Choi, Ji-Hyuk,Myoung, Jae-Min 한국재료학회 2011 한국재료학회지 Vol.21 No.2
As a growth-template of ZnO nanorods (NR), a hexagonal $\beta-Ni(OH)_2$ nanosheet (NS) was synthesized with the low temperature hydrothermal process and its microstructure was investigated using a high resolution scanning electron microscope and transmission electron microscope. Zinc nitrate hexahydrate was hydrolyzed by hexamethylenetetramine with the same mole ratio and various temperatures, growth times and total concentrations. The optimum hydrothermal processing condition for the best crystallinity of hexagonal $\beta-Ni(OH)_2$ NS was determined to be with 3.5 mM at $95^{\circ}C$ for 2 h. The prepared $Ni(OH)_2$ NSs were two dimensionally arrayed on a substrate using an air-water interface tapping method, and the quality of the array was evaluated using an X-ray diffractometer. Because of the similarity of the lattice parameter of the (0001) plane between ZnO (wurzite a = 0.325 nm, c = 0.521 nm) and hexagonal $\beta-Ni(OH)_2$ (brucite a = 0.313 nm, c = 0.461 nm) on the synthesized hexagonal $\beta-Ni(OH)_2$ NS, ZnO NRs were successfully grown without seeds. At 35 mM of divalent Zn ion, the entire hexagonal $\beta-Ni(OH)_2$ NSs were covered with ZnO NRs, and this result implies the possibility that ZnO NR can be grown epitaxially on hexagonal $\beta-Ni(OH)_2$ NS by a soluble process. After the thermal annealing process, $\beta-Ni(OH)_2$ changed into NiO, which has the property of a p-type semiconductor, and then ZnO and NiO formed a p-n junction for a large area light emitting diode.
우정민,전주희,강지연,이태일,명재민,Woo, Jung-Min,Jeon, Joo-Hee,Kang, Ji-Yeon,Lee, Tae-Il,Myoung, Jae-Min 한국재료학회 2011 한국재료학회지 Vol.21 No.3
Gold have been used as an electrode materials having a good mechanical flexibility as well as electrical conductivity, however the stretchability of the gold on a flexible substrate is poor because of its small elastic modulus. To overcome this mechanical inferiority, the reinforcing gold is necessary for the stretchable electronics. Among the reinforcing materials having a large elastic modulus, carbon nanotube (CNT) is the best candidate due to its good electrical conductivity and nanoscale diameter. Therefore, similarly to ferroconcrete technology, here we demonstrated gold electrodes mechanically reinforced by inserting fabrics of CNTs into their bodies. Flexibility and stretchability of the electrodes were determined for various densities of CNT fabrics. The roles of CNTs in resisting electrical disconnection of gold electrodes from the mechanical stress were confirmed using field emission scanning electron microscope and optical microscope. The best mechanical stability was achieved at a density of CNT fabrics manufactured by 1.5 ml spraying. The concept of the mechanical reinforced metal electrode by CNT is the first trial for the high stretchable conductive materials, and can be applied as electrodes materials in various flexible and stretchable electronic devices such as transistor, diode, sensor and solar cell and so on.
Polystyrene 입자 정렬을 이용한 성게 구조 ZnO 나노막대 가스 센서의 특성
김종우,김도훈,기태훈,박정혁,명재민,Kim, Jong-Woo,Kim, Do Hoon,Ki, Tae Hoon,Park, Jung Hyuk,Myoung, Jae-Min 한국재료학회 2017 한국재료학회지 Vol.27 No.12
Urchin-structured zinc oxide(ZnO) nanorod(NR) gas sensors were successfully demonstrated on a polyimide(PI) substrate, using single wall carbon nanotubes(SWCNTs) as the electrode. The ZnO NRs were grown with ZnO shells arranged at regular intervals to form a network structure with maximized surface area. The high surface area and numerous junctions of the NR network structure was the key to excellent gas sensing performance. Moreover, the SWCNTs formed a junction barrier with the ZnO which further improved sensor characteristics. The fabricated urchin-structured ZnO NR gas sensors exhibited superior performance upon $NO_2$ exposure with a stable response of 110, fast rise and decay times of 38 and 24 sec, respectively. Comparative analyses revealed that the high performance of the sensors was due to a combination of high surface area, numerous active junction points, and the use of the SWCNTs electrode. Furthermore, the urchin-structured ZnO NR gas sensors showed sustainable mechanical stability. Although degradation of the devices progressed during repeated flexibility tests, the sensors were still operational even after 10000 cycles of a bending test with a radius of curvature of 5 mm.
원통형 타겟 타입 Pulsed DC Magnetron Sputtering에서 두께 변화에 따른 Al-doped ZnO 박막의 특성 변화
신범기,이태일,박강일,안경준,명재민,Shin, Beom-Ki,Lee, Tae-Il,Park, Kang-Il,Ahn, Kyoung-Jun,Myoung, Jae-Min 한국재료학회 2010 한국재료학회지 Vol.20 No.1
Various thicknesses of Al-doped ZnO (AZO) films were deposited on glass substrate using pulsed dc magnetron sputtering with a cylindrical target designed for large-area high-speed deposition. The structural, electrical, and optical properties of the films of various thicknesses were characterized. All deposited AZO films have (0002) preferred orientation with the c-axis perpendicular to the substrate. Crystal quality and surface morphology of the films changed according to the film thickness. The samples with higher surface roughness exhibited lower Hall mobility. Analysis of the measured data of the optical band gap and the carrier concentration revealed that there were no changes for all the film thicknesses. The optical transmittances were more than 85% regardless of film thickness within the visible wavelength region. The lowest resistivity, $4.13\times10^{-4}\Omega{\cdot}cm^{-1}$ was found in 750 nm films with an electron mobility $(\mu)$ of $10.6 cm^2V^{-1} s^{-1}$ and a carrier concentration (n) of $1.42\times10^{21} cm^{-3}$.