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PERL(passivated emitter and rear locally-diffused cell)
김우현,권오준,남기홍,김기완,권성렬,정훈,김영우,배승춘,박성근 한국센서학회 1999 센서학회지 Vol.8 No.3
The n^+/p/P^+ junction PERL solar cell of 0.1∼2 Ω·cm (100) p type silicon wafer was fabricated through the following steps; that is, wafer cutting, inverted pyramidally textured surfaces etching by KOH, phosphorus and boron diffusion, anti-reflection coating, grid formation and contact annealing. At this time, the optical characteristics of device surface and the efficiency of doping concentration for resistivity were investigated. And diffusion depth and doping concentration for n+ doping were simulated by silvaco program. Then their results were compared with measured results. Under the illumination of AM(air mass)1.5, 100 mW/㎠ I_(sc), V_(oc), fill factor and the conversion efficiency were 43mA. 0.6 V, 0.62. and 16% respectively.