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최복길,최창규,권광호,김성진,Choi Bok-Gil,Choi Chang-Kyu,Kwon Kwang-Ho,Kim Sung-Jin 대한전기학회 2005 전기학회논문지C Vol.54 No.1
Thin films of vanadium oxide(VO/sub x/) were deposited by r.f. magnetron sputtering from V₂O/sub 5/ target with oxygen/(oxygen+argon) partial pressure ratio of 0% and 8% and in situ annealed in vacuum at 400℃ for 1h and 4h. Crystal structure, chemical composition, molecular structure, optical and electrical properties of films were characterized through XRD, XPS, RBS, FTIR, optical absorption and electrical conductivity measurements. The films as-deposited are amorphous, but 0%O₂ films annealed for time longer than 4h and 8% O₂ films annealed for time longer than 1h are polycrystalline. As the oxygen partial pressure is increased the films become more stoichiometric V₂O/sub 5/. When annealed at 400℃, the as-deposited films are reduced to a lower oxide. The optical transmission of the films annealed in vacuum decreases considerably than the as-deposited films and the optical absorption of all the films increases rapidly at wavelength shorter than about 550nm. Electrical conductivity and thermal activation energy are increased with increasing the annealing time and with decreasing the oxygen partial pressure.
崔福吉(Bok-Gil Choi),崔昌圭(Chang-Kyu Choi),金成振(Sung-Jin Kim) 대한전기학회 2006 전기학회논문지C Vol.55 No.10
Vanadium oxide thin films (VOx) have been deposited by RF magnetron sputtering from V₂O? target under different oxygen partial pressure ratios(0%, 10%) and substrate temperatures(27℃, 400℃). Crystallographic structure and morphology of the films are studied by XRD and SEM. Humidity-sensing properties of resistive sensors having interdigitated electrode structure are characterized through electrical conduction measurements. The films deposited at room temperature are amorphous whereas the ones deposited above 400℃ are polycrystalline. The sensors show good response to humidity over 20%RH to 80%RH. Vanadium oxide thin films deposited with 0%O₂ partial pressure at 400℃ exhibit greater sensitivity to humidity change than others.
Characteristics of Plasma Etching and Plasma Diagnostics of $$CF_4$ Gas with Electric Probe
성영권,신동렬,최복길,권광호,Sung, Yung-Kwon,Shin, Dong-Ryul,Choi, Bok-Gil,Kwon, Kwang-Ho The Institute of Electronics and Information Engin 1986 전자공학회논문지 Vol.23 No.6
In this paper, the measurement of RF discharge plasma parameters is studied both analytically and experimentally by the electric probe method. In the measurement using an electric probe, we measure the parameters of plasma in CF4 etching gas and discuss the relations of the results and Si wafer etching. Also, we show that the electric probe method is attractive for various applications.
김성진,이상훈,최복길,성만영,Kim, Seong-Jeen,Lee, Sang-Hoon,Choi, Bok-Gil,Sung, Man-Young 한국전기전자재료학회 2004 전기전자재료학회논문지 Vol.17 No.6
Porous silicon(PS) has received much attention as a sensitive material of chemical sensors because of its large internal surface area. In this work, we fabricated gas-sensing devices based on the porous silicon layer which could be applicable to the measurement of blood alcohol content(BAC), and estimated their electrical properties. The structure of the sensor is similar to an MIS (metal-insulator-semiconductor) diode and consists of thin Au/oxidized PS/PS/p-Si/Al, where the p-Si substrate is etched anisotropically to reduce the thickness. We measured C-V curves from two types of the samples with the PS layer treated by the different anodization current density of 60 or 100 mA/cm$^2$, in order to compare the sensitivity. As a result, the magnitude and variation of capacitances from the devices with the PS formed under the current density of 100 mA/cm$^2$ were found to be more detectable due to the larger internal surface.