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Kim, D.,Lee, D.,Yoon, S.,Jang, J.,Hong, M. Elsevier 2012 Current Applied Physics Vol.12 No.suppl4
This paper presents a low temperature fabrication of amorphous IGZO TFTs (a-IGZO TFTs) via high density CVD and superimposed rf/dc magnetron sputtering below 150 <SUP>o</SUP>C Low temperature processed SiO<SUB>x</SUB> films were been prepared in high density plasma chemical vapor deposition with inductively-coupled plasma (ICP) source and their electrical properties of these films have been investigated as a function of an ICP power and an O<SUB>2</SUB> flow rate. Also, we found that a-IGZO semiconductor could be affected by a dc self-bias of a target surface using a superimposed rf/dc magnetron sputtering. Increasing a dc self-bias, higher post-annealing temperature is needed to achieve their electrical characteristics of a-IGZO TFTs. For a low-temperature and high performance a-IGZO TFTs, therefore, it is necessarily considered that a-IGZO semiconductors could be damaged due to accelerated negative oxygen ions during conventional magnetron sputtering.
Jayapal Raja,Kyungsoo Jang,Hong Hanh Nguyen,Thanh Thuy Trinh,Woojin Choi,이준신 한국물리학회 2013 Current Applied Physics Vol.13 No.1
a-IGZO films were deposited on Si substrates by d.c sputtering technique with various working power densities (pd) in the range of 0.74e2.22 W/cm2. The correlation between material properties and their effects on electrical stability of a-IGZO thin-film transistor (TFTs) was studied as a function of pd. At a pd of 1.72 W/cm2 a-IGZO film had smoothest surface roughness (0.309 nm) with In-rich and Ga-poor cation compositions as a channel. This structurally ordered TFTs exhibited a high field effect mobility of 9.14 cm2/Vs, a sub-threshold swing (S.S.) of 0.566 V/dec, and an oneoff ratio of 107. Additionally, the Vth shift in hysteresis loop is almost eliminated. It was shown that the densification of the a-IGZO film resulted in the reduction of its interface trap density (1.83 ×1012 cm-2), which contributes for the improvement in the electrical and thermal stability.
Y. Li,Y.L. Pei,R.Q. Hu,Z.M. Chen,Y. Zhao,Z. Shen,B.F. Fan,J. Liang,G.Wang 한국물리학회 2014 Current Applied Physics Vol.14 No.7
We have investigated the electrical performance of amorphous indiumegalliumezinc oxide (a-IGZO) thin-film transistors with various channel thicknesses. It is observed that when the a-IGZO thickness increases, the threshold voltage decreases as reported at other researches. The intrinsic field-effect mobility as high as 11.1 cm2/Vs and sub threshold slope as low as w0.2 V/decade are independent on the thickness of a-IGZO channel, which indicate the excellent interface between a-IGZO and atomic layer deposited Al2O3 dielectric even for the case with a-IGZO thickness as thin as 10 nm. However, the source and drain series resistances increased with increasing of a-IGZO channel thickness, which results in the apparent field-effect mobility decreasing. The threshold voltage shift (DVth) under negative bias stress (NBS) and negative bias illumination stress (NBIS) were investigated, also. The hump-effect in the sub threshold region under NBS and threshold voltage shift to negative position under NBIS were enhanced with decreasing of a-IGZO channel thickness, owing to the enhancement of vertical electrical field in channel.
Abdelhafi d Marroun,Naima Amar Touhami,Taj-eddin El Hamadi 한국전기전자재료학회 2021 Transactions on Electrical and Electronic Material Vol.22 No.5
An (a-IGZO TFT) is modeled through experimental-based (a-IGZO TFTs) using (TCAD) simulator. A parametric study is performed on the numerical fit of the designed (a-IGZO TFT) current–voltage (I/V) characteristics, to obtain the near conduction band defects parameters optimal values, and to investigate the effect of the near band defects caused by oxygen vacancies on the (a-IGZO TFTs) output parameters. A new model approach is proposed for simulating (a-IGZO) electrical properties. The proposed model is known as a density of state models (DOS), and it is composed of two principal components, conduction band tail ( gAct(E)) and Gaussian distributed donor-like ( gDG(E)) . The study of the presented (DOS) models is based on both conduction band tail elements that are known as tail acceptor density ( gta ) as well as tail acceptor energy ( Ea ), and Gaussian distributed donor-like elements which are donor gaussian energy ( ED ) and donor gaussian distribution ( ggd ). Results show that the tail acceptor states defects ( gta , Ea ) near the conduction band is the cause of the mobility andgaussian donor distribution degradation near the conduction band, and it has a major impact on changes that occur in the subthreshold region data [threshold voltage (V th ), subthreshold swing (SS), and on-state/off -states current ratio (I on /I off )].
High-Speed Pseudo-CMOS Circuits Using Bulk Accumulation a-IGZO TFTs
Yuanfeng Chen,Di Geng,Mativenga, Mallory,Hyoungsik Nam,Jin Jang IEEE 2015 IEEE electron device letters Vol.36 No.2
<P>We propose a way to achieve high-speed circuits with dual-gate (DG) bulk-accumulation back-channeletched (BCE) amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) using the pseudo-CMOS structure. The DG BCE a-IGZO TFTs exhibit field-effect mobility (μ<SUB>FE</SUB>), threshold voltage (Vth), and subthreshold swing of 30 ± 3 cm<SUP>2</SUP>/Vs, 2 ± 0.5 V, and 120 ± 30 mV/decade, respectively. For input voltage (V<SUB>DD</SUB>) of 20 V, seven-stage pseudo-CMOS ring oscillators implemented with the BCE bulk-accumulation a-IGZO TFTs show oscillation frequency of 6.51 MHz, which corresponds to a propagation delay time of 11 ns/stage and is faster than the 17 ns/stage delay of the fastest single-gate-driven ratioed coplanar a-IGZO TFT circuits.</P>
Dongsik Kong,Hyun Kwang Jung,Yongsik Kim,Minkyung Bae,Jaeman Jang,Jaehyeong Kim,Woojoon Kim,Inseok Hur,김동명,김대환 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.59 No.21
The effect of the active layer thickness (T_(IGZO) ) on the negative bias illumanation stress (NBIS)-induced threshold voltage shift (VT ) in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is investigated and explained by using a subgap density-of-states model. The NBIS-induced VT in a-IGZO TFT with a thinner T_(IGZO) is negatively larger than that in a-IGZO TFTs with a thicker T_(IGZO) . The T_(IGZO) -dependent VT is found to be caused by either hole trapping into the gate insulator near the interface or oxygen vacancy (Vo) ionization, which is activated more by a larger surface electric field EIGZO as T_(IGZO) becomes thinner.
Abdelhafid Marroun,Naima Amar Touhami,Taj-eddin El Hamadi 한국전기전자재료학회 2021 Transactions on Electrical and Electronic Material Vol.22 No.5
An a-IGZO TFT is analyzed in this paper. The Universal Organic TFT (UOTFT) equivalent circuit model is used to model the a-IGZO TFT equivalent circuit. Physical simulation is performed to examine the channel width effect (W) on its current–voltage characteristics I ds , gate-to-source capacitance C gs , and gate-to-drain capacitance C gd . Moreover, analytical modeling is put into the study of the source current I ds . A multilayer perceptron (MLP) neural modeling method is applied and tested with diff erent numbers of neurons to elaborate an equivalent mathematical model of the used a-IGZO TFT output characteristic I ds , as well as to develop an equivalent circuit model of the proposed a-IGZO TFT gate-to-source capacitance C gs , and gate-to-drain capacitance C gd . Results prove that the multilayer perceptron (MLP) neural modeling and more precisely MLP3 [4 5 1] and MLP3 [4 4 1] represents the most optimal solution compared with the analytical model for Ids and capacitances (C gs , C gd ), respectively. They also prove that the used Universal Organic TFT (UOTFT) Model is a good candidate for a-IGZO TFT equivalent circuit modeling.
Physics-Based SPICE Model of a-InGaZnO Thin-Film Transistor Using Verilog-A
Yong Woo Jeon,Inseok Hur,Yongsik Kim,Minkyung Bae,Hyun Kwang Jung,Dongsik Kong,Woojoon Kim,Jaehyeong Kim,Jaeman Jang,Dong Myong Kim,Dae Hwan Kim 대한전자공학회 2011 Journal of semiconductor technology and science Vol.11 No.3
In this work, we report the physics-based SPICE model of amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) and demonstrate the SPICE simulation of amorphous InGaZnO (aIGZO) TFT inverter by using Verilog-A. As key physical parameter, subgap density-of-states (DOS) is extracted and used for calculating the electric potential, carrier density, and mobility along the depth direction of active thin-film. It is confirmed that the proposed DOS-based SPICE model can successfully reproduce the voltage transfer characteristic of a-IGZO inverter as well as the measured I-V characteristics of a-IGZO TFTs within the average error of 6% at V/)/)=20 V.
Physics-Based SPICE Model of a-InGaZnO Thin-Film Transistor Using Verilog-A
Jeon, Yong-Woo,Hur, In-Seok,Kim, Yong-Sik,Bae, Min-Kyung,Jung, Hyun-Kwang,Kong, Dong-Sik,Kim, Woo-Joon,Kim, Jae-Hyeong,Jang, Jae-Man,Kim, Dong-Myong,Kim, Dae-Hwan The Institute of Electronics and Information Engin 2011 Journal of semiconductor technology and science Vol.11 No.3
In this work, we report the physics-based SPICE model of amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) and demonstrate the SPICE simulation of amorphous InGaZnO (a-IGZO) TFT inverter by using Verilog-A. As key physical parameter, subgap density-of-states (DOS) is extracted and used for calculating the electric potential, carrier density, and mobility along the depth direction of active thin-film. It is confirmed that the proposed DOS-based SPICE model can successfully reproduce the voltage transfer characteristic of a-IGZO inverter as well as the measured I-V characteristics of a-IGZO TFTs within the average error of 6% at $V_{DD}$=20 V.
Yang, H.,Cho, B.,Park, J.,Shin, S.,Ham, G.,Seo, H.,Jeon, H. Elsevier 2014 Current Applied Physics Vol.14 No.12
We reported the effects on the electrical behavior of amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) after introducing various positions and sizes of Au nanoparticles (NPs) in the channel layer. These TFTs showed an off-current increase and threshold voltage (V<SUB>th</SUB>) shift compared to conventional a-IGZO TFTs. The effects of Au NPs are explained to form the carrier conduction path which causes the current leakage in the channel layer, and act as either electron injection sites or trap sites. Therefore, this study demonstrates that the optimized control of size and position of Au NPs in the channel layer is crucial for its application in the electrical stability improvement and V<SUB>th</SUB> control of a-IGZO TFTs.