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Boron-doped hydrogenated mixed-phase silicon as thermo-sensing films for infrared detectors
Phong Pham, Duy,Park, Jinjoo,Shin, Chonghoon,Kim, Sangho,Nam, Yonghyun,Kim, Geunho,Kim, Minsik,Yi, Junsin Elsevier 2018 Materials science in semiconductor processing Vol.74 No.-
<P><B>Abstract</B></P> <P>Silicon materials have been widely used as thermo-sensing layers in infrared detectors or uncooled micro-bolometers. Parameters such as a large thermal coefficient of resistance (TCR), low sheet resistance (R<SUB>s</SUB>), and low 1/f noise are important for high performance of these devices. However, there is always a trade-off between these parameters. For example, the crystalline silicon materials typically exhibit low R<SUB>s</SUB> and 1/f noise, and significantly low TCR, while the amorphous silicon materials generally have large TCR, and considerably high R<SUB>s</SUB> and 1/f noise. Consequently, the best trade-off can be achieved by using a mixed-phase structure of silicon materials, i.e. an intermediate form between the crystalline and amorphous structures. Herein we report the important characteristics of hydrogenated mixed-phase silicon films, deposited by the plasma-enhanced chemical vapour deposition process, for infrared detectors. The films in the mixed-phase structure showed high TCR values in the range of 2–3%K<SUP>–1</SUP> and moderate sheet resistances in range of 10–40MΩsq<SUP>−1</SUP>. These results indicate that the mixed-phase silicon films are potential alternatives to conventional boron doped hydrogenated amorphous and microcrystalline silicon films for use as thermo-sensing layers in infrared detectors.</P>
MOD법으로 제조된 Copper Manganite 박막의 구조 및 NTCR 특성
이귀웅,전창준,정영훈,윤지선,남중희,조정호,백종후,윤종원,Lee, Kui Woong,Jeon, Chang Jun,Jeong, Young Hun,Yun, Ji Sun,Nam, Joong Hee,Cho, Jeong Ho,Paik, Jong Hoo,Yoon, Jong-Won 한국전기전자재료학회 2014 전기전자재료학회논문지 Vol.27 No.7
Copper manganite thin films were fabricated on $SiN_x/Si$ substrate by metal organic decomposition (MOD) process. They were burned-out at $400^{\circ}C$ and annealed at various temperatures ($400{\sim}800^{\circ}C$) for 1h in ambient atmosphere. Their micro-structure and negative temperature coefficient of resistance (NTCR) characteristics were analyzed for micro-bolometer application. The copper manganite film with a cubic spinel structure was well developed at $500^{\circ}C$ which confirmed by XRD and HRTEM analysis. It showed a low resistivity ($47.5{\Omega}{\cdot}cm$) at room temperature and high NTCR characteristics of $-4.12%/^{\circ}C$ and $-2.15%/^{\circ}C$ at room temperature and $85^{\circ}C$, implying a good thin film for micro-bolometer application. Furthermore, its crystallinity was enhanced with increasing temperature to $600^{\circ}C$. However, the appearance of secondary phase at temperatures higher than $600^{\circ}C$ lead to deteriorate the NTCR characteristics.
A Readout IC Design for the FPN Reduction of the Bolometer in an IR Image Sensor
Shin, Ho-Hyun,Hwang, Sang-Joon,Jung, Eun-Sik,Yu, Seung-Woo,Sung, Man-Young The Korean Institute of Electrical and Electronic 2007 Transactions on Electrical and Electronic Material Vol.8 No.5
In this paper, we propose and discuss the design using a simple method that reduces the fixed pattern noise(FPN) generated on the amorphous Si($\alpha-Si$) bolometer. This method is applicable to an IR image sensor. This method can also minimize the size of the reference resistor in the readout integrated circuit(ROIC) which processes the signal of an IR image sensor. By connecting four bolometer cells in parallel and averaging the resistances of the bolometer cells, the fixed pattern noise generated in the bolometer cell due to process variations is remarkably reduced. Moreover an $\alpha-Si$ bolometer cell, which is made by a MEMS process, has a large resistance value to guarantee an accurate resistance value. This makes the reference resistor be large. In the proposed cell structure, because the bolometer cells connected in parallel have a quarter of the original bolometer's resistance, a reference resistor, which is made by poly-Si in a CMOS process chip, is implemented to be the size of a quarter. We designed a ROIC with the proposed cell structure and implemented the circuit using a 0.35 um CMOS process.
A Readout IC Design for the FPN Reduction of the Bolometer in an IR Image Sensor
Ho Hyun Shin,Sang Joon Hwang,Eun Sik Jung,Seung Woo Yu,Man Young Sung 한국전기전자재료학회 2007 Transactions on Electrical and Electronic Material Vol.8 No.5
In this paper, we propose and discuss the design using a simple method that reduces the fixed pattern noise (FPN) generated on the amorphous Si (α-Si) bolometer. This method is applicable to an IR image sensor. This method can also minimize the size of the reference resistor in the readout integrated circuit (ROIC) which processes the signal of an IR image sensor. By connecting four bolometer cells in parallel and averaging the resistances of the bolometer cells, the fixed pattern noise generated in the bolometer cell due to process variations is remarkably reduced. Moreover an α-Si bolometer cell, which is made by a MEMS process, has a large resistance value to guarantee an accurate resistance value. This makes the reference resistor be large. In the proposed cell structure, because the bolometer cells connected in parallel have a quarter of the original bolometer’s resistance, a reference resistor, which is made by poly-Si in a CMOS process chip, is implemented to be the size of a quarter. We designed a ROIC with the proposed cell structure and implemented the circuit using a 0.35 um CMOS process.
높은 열저항 계수를 가지는 비냉각형 적외선 열영상 이미지 센서용 MDTF(Metal-dielectric Thin Film)에 관한 연구
정은식,정세진,강이구,성만영,Jung, Eun-Sik,Jeong, Se-Jin,Kang, Ey-Goo,Sung, Man-Young 한국전기전자재료학회 2012 전기전자재료학회논문지 Vol.25 No.5
In this paper, fabricated by MEMS uncooled micro-bolometer detector for the study in the infrared sensitivity enhancement. Absorption layer SiOx-Metal series MDTF (metal-dielectric thin film) by high absorption rate and has a high thermal coefficient of resistance, low noise characteristics were implemented. Then MDTF were made in a vacuum deposition method. And MDTF for the analysis of the physical properties of silicon wafers were fabricated, TCR (temperature coefficient of resistance) value was made in order to measure the glass wafer and FT-IR (Fourier Transform Infrared spectroscopy) values were made in order to measure the germanium window. The analyzed results of MDTF -3 [%/K] has more characteristics of the TCR. And 8~12 um wavelength region close to 70% in the absorption characteristic.
적외선 마이크로 볼로미터를 위한 $Si_{1-x}Sb_x$ 박막의 특성
이동근,류상욱,양우석,조성목,전상훈,류호준,Lee, Dong-Keun,Ryu, Sang-Ouk,Yang, Woo-Seok,Cho, Seong-Mok,Cheon, Sang-Hoon,Ryu, Ho-Jun 한국반도체디스플레이기술학회 2009 반도체디스플레이기술학회지 Vol.8 No.3
we have studied characterization of microbolometer based on the co-sputtered silicon-antimony ($Si_{1-x}Sb_x$) thin film for infrared microbolometer. We have investigated the resistivity and the temperature coefficient of resistance (TCR) with annealing. We deposited the films using co-sputtering method at $200^{\circ}C$ in the Ar environment. The Sb concentration has been adjusted by applying variable DC power from Sb targets. TCR of deposited $Si_{1-x}Sb_x$ films have been measured the range of -2.3~-2.8%/K. The resistivity of the film is low but TCR is higher than the other bolometer materials. Resistivity of the films has not been affected hugely according to the low annealing temperature however the resistivity has been dramatically decreased over $250^{\circ}C$. It is caused of a phase change due to the rearrangement of Si and Sb atoms during crystallization process of the films.