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        • KCI등재

          세렌디퍼티 척도 및 교수 모형 개발

          정은식,강이철 한국교육공학회 2008 교육공학연구 Vol.24 No.4

          본 연구의 목적은 창의성을 신장하기 위한 방법으로 고등학교 학생들의 세렌디퍼티를 측정하는 검사와 세렌디퍼티를 신장하기 위한 교수 모형을 개발하는 것이다. 과학적 창의성은 논리, 천재, 기회, 시대정신의 네 가지 관점에서 논의되어 왔다. 이 중 예기치 않은 발견을 뜻하는 기회의 관점이 바로 세렌디퍼티에 해당하며, 과학에서 많은 발견들이 세렌디퍼티에 의해 이루어졌다. 본 연구에서는 세렌디퍼티를 구성하는 요인을 선행 연구를 통해 호기심, 지각력, 탐구심, 통찰력의 네 가지로 보고 이를 측정하는 검사를 리커트 척도로 개발하였다. 고등학교 10개교 학생 722명(남학생 431명, 여학생 291명)을 대상으로 예비검사와 본 검사를 실시하였다. 본 검사의 확인적 요인분석 결과 4가지 요인에 16문항으로 구성된 검사로서 타당성이 검증되었다. 또한 세렌디퍼티 요인 간의 관계를 구조방정식 모형으로 지각력, 호기심, 탐구심, 통찰력으로 직선적인 인과관계를 산출하였다. 세렌디퍼티 교수 모형의 단계는 요인의 인과관계에 따라 네 단계로 하였으며, 각 단계별 활동은 세렌디퍼티의 양성에 대한 선행연구, Keller의 ARCS이론, Brown & Walter의 문제 제기의 기술, 그리고 Bernstein의 창조적 통찰을 위한 사고의 도구를 바탕으로 개발하였다. PCEI (Perception- Curiosity-Exploration-Insight) 교수 모형의 첫 번째 단계는 지각 단계로 오감을 이용하여 주의 깊게 관찰하는 단계이다. 두 번째는 호기심 단계로 학생들 스스로 문제를 제기하게 하는 단계이다. 세 번째는 탐구 단계로 그들이 제기한 문제를 실험이나 토의, 과제를 통해 탐구하게 하는 단계이다. 네 번째는 사고의 도구를 이용하여 학습한 내용을 구조화하여 기존의 지식과 연결하고 새로운 문제를 해결하는 단계이다. The purpose of this study is to develop a scale and a teaching model for improving serendipity in high school. Serendipity can be defined as the faculty of making fortunate and unexpected discoveries by accident. Many scientific discoveries were made by serendipity. The study suggested serendipity is constructed by curiosity, perception, exploration, and insight. A pool of serendipity items was administered to 722(291 girls; 431 boys) high school students. With confirmatory factor analysis, 16-items in four factors were identified for serendipity scale. It was proved that perception directly influences on curiosity, curiosity directly influences on exploration, and exploration directly influences on insight by structural equation model. The study developed PCEI teaching model on the ground causal relations in the factors of serendipity, previous studies of serendipity, ARCS theory of Keller, the art of problem posing of Brown & Walter, and thinking tools for creative insight of Root-Bernstein. First step is perception that students carefully observe with eye, ear, nose, mouth, and hand. Second step is curiosity that students pose problems and generate questions. Third step is that students explore her or his problems through discussion, experiment, or homework. Forth step is insight that students connect new knowledge with previous knowledge and solve new problems with thinking tools. The study suggests that improving serendipity increases creativity and more research may be needed for validating PCEI teaching model.

        • KCI등재

          높은 열저항 계수를 가지는 비냉각형 적외선 열영상 이미지 센서용 MDTF(Metal-dielectric Thin Film)에 관한 연구

          정은식,정세진,강이구,성만영,Jung,,Eun-Sik,Jeong,,Se-Jin,Kang,,Ey-Goo,Sung,,Man-Young 한국전기전자재료학회 2012 전기전자재료학회논문지 Vol.25 No.5

          In this paper, fabricated by MEMS uncooled micro-bolometer detector for the study in the infrared sensitivity enhancement. Absorption layer SiOx-Metal series MDTF (metal-dielectric thin film) by high absorption rate and has a high thermal coefficient of resistance, low noise characteristics were implemented. Then MDTF were made in a vacuum deposition method. And MDTF for the analysis of the physical properties of silicon wafers were fabricated, TCR (temperature coefficient of resistance) value was made in order to measure the glass wafer and FT-IR (Fourier Transform Infrared spectroscopy) values were made in order to measure the germanium window. The analyzed results of MDTF -3 [%/K] has more characteristics of the TCR. And 8~12 um wavelength region close to 70% in the absorption characteristic.

        • KCI등재

          고상 결정화로 제작한 다결성 실리콘 박막 트랜지스터에서의 열화특성 분석

          정은식,이용재 한국전기전자재료학회 2003 전기전자재료학회논문지 Vol.16 No.1

          Then-channel poly-Si thin-film transistors (poly-Si TFT's) formed by solid phase crystallization (SPC) method on glass were measured to obtain the electrical parameters such as of I-V characteristics, mobility, leakage current, threshold voltage, and subthreshold slope. Then, devices were analyzed to obtain the reliability and appliability on TFT-LCD with large-size and high density. In n-channel poly-Si TFT with 5$\mu\textrm{m}$/2$\mu\textrm{m}$, 8$\mu\textrm{m}$, 30$\mu\textrm{m}$ devices of channel width/length, the field effect mobilities are 111, 116, 125 $\textrm{cm}^2$/V-s and leakage currents are 0.6, 0.1, and 0.02 pA/$\mu\textrm{m}$, respectively. Low threshold voltage and subthreshold slope, and good ON-OFF ratio are shown, as well. Thus. the poly-Si TFT's used by SPC are expected to be applied on TFT-LCD with large-size and high density, which can integrate the display panel and peripheral circuit on a targe glass substrate.

        • KCI등재

          차동 델타 샘플링 기법을 이용한 비냉각형 적외선 검출회로의 설계에 관한 연구

          정은식,권오성,이포,정세진,성만영,Jung,,Eun-Sik,Kwan,,Oh-Sung,Lee,,Po,Jeong,,Se-Jin,Sung,,Man-Young 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.5

          A uncooled infrared ray sensor used in an infrared thermal imaging detector has many advantages. But because the uncooled infrared ray sensor is made by MEMS (micro-electro-mechanical system) process variation of offset is large. In this paper, to solve process variation of offset a ROIC for uncooled infrared ray sensor that has process variation of offset compensation technique using differential delta sampling and reference signal compensation circuit was proposed. As a result of simulation that uses the proposed ROIC, it was possible to acquire compensated output characteristics without process variation of offsets.

        • KCI등재SCOPUS

          A Study on the Design and Electrical Characteristics Enhancement of the Floating Island IGBT with Low On-Resistance

          정은식,Yu,Seup,Cho,강이구,김용태,성만영 대한전기학회 2012 Journal of Electrical Engineering & Technology Vol.7 No.4

          Insulated Gate Bipolar Transistors(IGBTs) have received wide attention because of their high current conduction and good switching characteristics. To reduce the power loss of IGBT, the onstate voltage drop should be lowered and the switching time should be shortened. However, there is trade-off between the breakdown voltage and the on-state voltage drop. The FLoatingIsland(FLI)structure can lower the on-state voltage drop without reducing breakdown voltage. In this paper, The FLI IGBT shows an on-state voltage drop that is 22.5% lower than the conventional IGBT, even though the breakdown voltages of each IGBT are almost identical.

        • KCI등재SCOPUS

          Design and Fabrication of Super Junction MOSFET Based on Trench Filling and Bottom Implantation Process

          정은식,경신수,강이구 대한전기학회 2014 Journal of Electrical Engineering & Technology Vol.9 No.3

          In Super Junction MOSFET, Charge Balance is the most important issue of the trenchfilling Super Junction fabrication process. In order to achieve the best electrical characteristics, the Ntype and P type drift regions must be fully depleted when the drain bias approaches the breakdownvoltage, called Charge Balance Condition. In this paper, two methods from the fabrication processwere used at the Charge Balance condition: Trench angle decreasing process and Bottom implantationprocess. A lower on-resistance could be achieved using a lower trench angle. And a higher breakdownvoltage could be achieved using the bottom implantation process. The electrical characteristics ofmanufactured discrete device chips are compared with those of the devices which are designed ofTCAD simulation.

        • KCI등재

          고상 결정화로 제작한 다결정 실리콘 박막 트랜지스터에서의 열화특성 분석

          정은식,이용재 한국전기전자재료학회 2003 전기전자재료학회논문지 Vol.16 No.1

          The n-channel poly-Si thin-film transistors (poly-Si TFT's) formed by solid phase crystallization (SPC) method on glass were measured to obtain the electrical parameters such as of I-V characteristics, mobility, leakage current, threshold voltage, and subthreshold slope. Then, devices were analyzed to obtain the reliability and appliability on TFT-LCD with large-size and high density. In n-channel poly-Si TFT with 5㎛/2㎛, 8㎛, 30㎛ devices of channel width/length, the field effect mobilities are 111, 116, 125 cm2/V-s and leakage currents are 0.6, 0.1, and 0.02 pA/㎛, respectively. Low threshold voltage and subthreshold slope, and good ON-OFF ratio are shown, as well. Thus, the poly-Si TFT's used by SPC are expected to be applied on TFT-LCD with large-size and high density, which can integrate the display panel and peripheral circuit on a large glass substrate.

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