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MgO 완충층을 이용한 Si 기판상 강유전체 $BaTiO_3$ 박막의 제조
김상섭 한국세라믹학회 1997 한국세라믹학회지 Vol.34 No.4
A study on the deposition and characterization of BaTiO3 thin films on MgO-buffered Si(100) substrates by sputtering was conducted. The MgO buffer layers were investigated as a function of deposition temperature. At lower substrate temperature, the MgO layers were not fully crystalline, but a crystallized MgO layer with (001) preferred orientation was obtained at the substrate temperature of $700^{\circ}C$. Partially (00ι) or (h00) textured BaTiO3 films were obtained on Si(100) with the MgO buffer layer grown at 700ι. While, randomly oriented BaTiO3 films with large-scale cracks on the surface were made without the MgO layer. The crystallographic orientation, morphology and electrical properties between the BaTiO3 films on Si with and without the MgO layer were compared using the BaTiO3 film on MgO(100) single crystal substrate as a reference system. Also the favorable role of the MgO layer as a buffer for growing of oriented BaTiO3 films on Si substrates was confirmed.
Yi Da Yang,김홍승,장낙원,윤영 한국물리학회 2017 New Physics: Sae Mulli Vol.67 No.2
The structural properties of MgO films deposited on Si(100) substrates by combining RF sputtering and the sol-gel process were investigated. The films' orientation properties, thicknesses and the surface morphologies were investigated by using X-ray diffraction (XRD), transmission electron microscopy (TEM) and atomic force microscopy (AFM). X-ray diffraction and surface morphology showed that the structures of the films varied with annealing temperature. Crystallizations of (111)-preferentially-oriented MgO films deposited on Si(100) substrates with a MgO buffer layer were easily observed after the samples had been annealed at temperatures above 700 $^\circ$C. However, the structural properties of the MgO films deposited on MgO buffer layers were almost the same, regardless of the existence of the MgO buffer layer.
Yugo Asai,Mitsuru Ohtake,Tetsuroh Kawai,Masaaki Futamoto 한국물리학회 2013 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.63 No.3
(Fe0.7Co0.3)100−xBx alloy thin films are prepared on MgO single-crystal substrates with (100),(110), and (111) orientations at 200C by ultra-high vacuum radio-frequency magnetron sputteringwith various B compositions, x, from 0 to 15 at.%. The effects of composition and substrate orientationon the structure and the magnetic properties are studied. Fe-Co epitaxial films with bccstructures are obtained on all substrates. Fe-Co(100) single-crystal films are formed on MgO(100)substrates. Fe-Co films epitaxially grown on MgO(110) substrates consist of two (211) variantswhose orientations are rotated around the film’s normal by 180 each other. Fe-Co(110) filmsgrow epitaxially on MgO(111) substrates with two types of variants, Nishiyama-Wasserman andKurdjumov-Sachs relationships. As the B composition increases up to around 5 at.%, the filminvolves an amorphous structure in addition to an epitaxial bcc crystal structure. With furtherincreases in the B content, the film is only amorphous. The magnetization properties of the filmsinvolving epitaxial crystals reflect the magnetocrystalline anisotropy of the bulk Fe-Co crystal. The easy magnetization direction varies depending on the crystallographic orientation of the film. Isotropic in-plane magnetic properties are observed for amorphous films.
MgO가 첨가된 $Ba_{0.5}Sr_{0.5}TiO_3$ 후막의 구조 및 유전 특성
강원석,남성필,고중혁,이성갑,이영희,Kang, Won-Seok,Nam, Sung-Pil,Koh, Jung-Hyuk,Lee, Sung-Gap,Lee, Young-Hie 대한전기학회 2006 전기학회논문지C Vol.55 No.12
Using the $Ba_{0.5}Sr_{0.5}TiO_3$(BST) powders prepared by the Sol-Gel method, the BST thick films were fabricated on the $Al_2O_3 $substrates coated with Pt by the screen printing method. Compared with pure BST thick films, the structural and dielectric properties of the BST thick films doped with $1{\sim}10$ wt % MgO were investigated. It was observed that the Mg substitution into BST causes a shift in the cubic-tetragonal BST phase transition peak to a lower temperature. The microstructure of the BST substituted with Mg was homogeneous and dense. Mg substitution into BST had a significant effect on the grain size reduction. Dielectric constant was decreased with increasing the MgO content and temperature. In the case of BST thick films doped with 1 wt% MgO, the relative permittivity and dielectric loss were 1581 and 1.4 % at 1 MHz.
정지욱,이민수,조태식,Jeung, Ji-Wook,Yi, Min-Soo,Cho, Tae-Sik 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.2
The crystallization of FePt/MgO(001) magnetic thin films of various thicknesses has been studied using synchrotron x-ray scattering, atomic force microscope, and vibrating sample magnetometer. In film with a 499-$\AA$-thick, face-centered tetragonal, ordered FePt phase was dominantly crystallized into perpendicular (001) grains keeping the magnetically easy c-axis normal to the film plane during annealing. In film with a 816-$\AA$-thick, however, longitudinal (110) grains keeping the c-axis parallel to the film plane were grown on top of the perpendicular (001) grains. The behavior of the magnetic properties was consistent with the thickness dependence of the crystallization. We attribute the thickness dependence of the crystallization to the substrate effect, which prefers the growth of the c-axis oriented perpendicular grains near the film/substrate interfacial area.
MgO가 첨가된 Ba<SUB>0.5</SUB>Sr<SUB>0.5</SUB>TiO₃ 후막의 구조 및 유전 특성
姜元?(Won-Seok Kang),南成必(Sung-Pil Nam),高重赫(Jung-Hyuk Koh),李成甲(Sung-Gap Lee),李永熙(Young-Hie Lee) 대한전기학회 2006 전기학회논문지C Vol.55 No.12
Using the Ba<SUB>0.5</SUB>Sr<SUB>0.5</SUB>TiO₃(BST) powders prepared by the Sol-Gel method, the BST thick films were fabricated on the Al₂O₃ substrates coated with Pt by the screen printing method. Compared with pure BST thick films, the structural and dielectric properties of the BST thick films doped with 1~10 wt % MgO were investigated. It was observed that the Mg substitution into BST causes a shift in the cubic-tetragonal BST phase transition peak to a lower temperature. The microstructure of the BST substituted with Mg was homogeneous and dense. Mg substitution into BST had a significant effect on the grain size reduction. Dielectric constant was decreased with increasing the MgO content and temperature. In the case of BST thick films doped with 1 wt% MgO, the relative permittivity and dielectric loss were 1581 and 1.4 % at 1 ㎒.
Ageing and vapor chopping effect on the properties of MgO thin films
Tamboli, S.H.,Jatratkar, A.,Yadav, J.B.,Puri, V.,Puri, R.K.,Cho, H.H. Elsevier Sequoia 2014 JOURNAL OF ALLOYS AND COMPOUNDS Vol.588 No.-
Nanoscale magnesium oxide thin films have been prepared on glass substrates by thermal oxidation (in air) of vacuum evaporated magnesium films. The ageing (air exposure) effect for 1, 10, 20 and 30days on the various properties of MgO thin films was studied. The ageing effect on the optoelectronic devices i.e. optical waveguide and plasma display panel's performance was examined by measuring their optical transmission loss and secondary electron emission yield, respectively. Vapor chopping technique was employed for thin film quality improvement followed by ageing inhibition. The firing voltage for fresh vapor chopped (VC) MgO thin films was in 125-150V range, which shifted to 140-178V after 30days, whereas in the non-chopped (NC) films it increased up to 165-210V from 140-160V. After 30days ageing, NC thin film surface morphology changed from polished to dull due to wrapped moisture like layer, whereas VC thin film morphology was unpretentious. The XPS analysis also confirmed the VC MgO thin films superior sustainability against the ageing than NC films.
Song, Han-Wook,No, Kwang-Soo The Korean Ceramic Society 2000 The Korean journal of ceramics Vol.6 No.1
The effects of oxygen annealing on the carbon content in MgO thin films were investigated, MgO thin films were deposited on Si(100) substrate at different temperatures of 400 to $700^{\circ}C$ and different deposition rates of 3.4 to 11.6$\AA$/min. Using rf magnetron sputtering method. Carbon content change on the surface of MgO thin films with the oxygen annealing at different temperatures was investigated using various method. The carbon content decreased as the annealing temperature increased. $Pb(Zr_{0.53}Ti_{0.47})O_3$(PZT) thin films were deposited on the MgO/Si(100) substrates. The effects of carbon content on the phase formation and the electrical properties of PZT thin films were also investigated.
Investigations for the Existence of an Iron-Oxide Layer at the MgO/Fe Interface
이한길,T.-Y. Khim,K.-J. Rho,김재영,박재훈 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.2
We have investigated the possibility of an interface between MgO and Fe lms to explore the existence of an oxide layer at the MgO/Fe interface as a preliminary system of Fe/MgO/Fe magnetic tunnel junctions. By using photoemission spectroscopy and X-ray absorption spectroscopy, we found that no iron-oxide layer existed at the interface for the in-situ-grown epitaxial MgO(001)/Fe(001) bilayer on a W(001) substrate. Moreover, we showed that metal Mg could revivify the iron-oxide to metal Fe when MgO was formed. These results show we can make iron-oxide-free samples in the Mg-rich growth condition.
Park, Cha-Soo,Park, Min-Seok,Park, Joon-Young,Kim, Dong-Hyun,Lee, Ho-Jun,Park, Chung-Hoo The Korean Institute of Electrical Engineers 2003 KIEE International Transactions on Electrophysics Vol.3C No.2
This paper proposes a relative lifetime test method of MgO thin film. The suggested test conditions are 5$0^{\circ}C$, 400Torr, 20% over-voltage and 300KHz. The relative lifetime of MgO thin film is significantly affected by the MgO preparing conditions and Xe partial pressure. As result, the lifetime of the AC plasma display panel (PDP) is increased with an MgO thickness of 2000$\AA$ to 8000$\AA$ but is saturated over 5000$\AA$ (up to 9000 $\AA$). In addition, as Xe partial pressure increases, AC PDP lifetime increases.