The Impedance Analysis of Multiple TSV-to-TSV

Sihyun Lee(이시현) 대한전자공학회 2016 전자공학회논문지 Vol.53 No.7

본 논문에서는 기존의 2D IC의 성능을 개선하고 3D IC의 집적도와 전기적인 특성을 개선하기 위한 목적으로 연구되고 있는 TSV (Through Silicon Via)의 임피던스를 해석하였다. 향후 Full-chip 3D IC 시스템 설계에서 TSV는 매우 중요한 기술이며, 높은 집적도와 광대역폭 시스템 설계를 위해서 TSV에 대한 전기적인 특성에 관한 연구가 매우 중요하다. 따라서 본 연구에서는 Full-chip 3D IC를 설계하기 위한 목적으로 다중 TSV-to-TSV에서 거리와 주파수에 따른 TSV의 임피던스 영향을 해석하였다. 또한 이 연구 결과는 Full-chip 3D IC를 제조하기 위한 반도체 공정과 설계 툴에 적용할 수 있다. In this paper, we analyze the impedance analysis of vertical interconnection through-silicon vias (TSV) that is being studied for the purpose of improving the degree of integration and an electric feature in 3D IC. Also, it is to improve the performance and the degree of integration of the three-dimensional integrated circuit system which can exceed the limits of conventional two-dimensional a IC. In the future, TSV technology in full-chip 3-dimensional integrated circuit system design is very important, and a study on the electrical characteristics of the TSV for high-density and high-bandwidth system design is very important. Therefore, we study analyze the impedance influence of the TSV in accordance with the distance and frequency in a multiple TSV-to-TSV for the purpose of designing a full-chip three-dimensional IC. The results of this study also are applicable to semiconductor process tools and designed for the manufacture of a full-chip 3D IC.

Post Silicon Management of On-Package Variation Induced 3D Clock Skew

Tak-Yung Kim,Taewhan Kim 대한전자공학회 2012 Journal of semiconductor technology and science Vol.12 No.2

A 3D stacked IC is made by multiple dies (possibly) with heterogeneous process technologies. Therefore, die-to-die variation in 2D chips renders on-package variation (OPV) in a 3D chip. In spite of the different variation effect in 3D chips, generally, 3D die stacking can produce high yield due to the smaller individual die area and the averaging effect of variation on data path. However, 3D clock network can experience unintended huge clock skew due to the different clock propagation routes on multiple stacked dies. In this paper, we analyze the on-package variation effect on 3D clock networks and show the necessity of a post silicon management method such as body biasing technique for the OPV induced 3D clock skew control in 3D stacked IC designs. Then, we present a parametric yield improvement method to mitigate the OPV induced 3D clock skew.

TSV-Aware Interconnect Distribution Models for Prediction of Delay and Power Consumption of 3-D Stacked ICs

Dae Hyun Kim,Mukhopadhyay, Saibal,Sung Kyu Lim IEEE 2014 IEEE transactions on computer-aided design of inte Vol.33 No.9

<P>3-D integrated circuits (3-D ICs) are expected to have shorter wirelength, better performance, and less power consumption than 2-D ICs. These benefits come from die stacking and use of through-silicon vias (TSVs) fabricated for interconnections across dies. However, the use of TSVs has several negative impacts such as area and capacitance overhead. To predict the quality of 3-D ICs more accurately, TSV-aware 3-D wirelength distribution models considering the negative impacts were developed. In this paper, we apply an optimal buffer insertion algorithm to the TSV-aware 3-D wirelength distribution models and present various prediction results on wirelength, delay, and power consumption of 3-D ICs. We also apply the framework to 2-D and 3-D ICs built with various combinations of process and TSV technologies and predict the quality of today and future 3-D ICs.</P>

Post Silicon Management of On-Package Variation Induced 3D Clock Skew

Kim, Tak-Yung,Kim, Tae-Whan The Institute of Electronics and Information Engin 2012 Journal of semiconductor technology and science Vol.12 No.2

A 3D stacked IC is made by multiple dies (possibly) with heterogeneous process technologies. Therefore, die-to-die variation in 2D chips renders on-package variation (OPV) in a 3D chip. In spite of the different variation effect in 3D chips, generally, 3D die stacking can produce high yield due to the smaller individual die area and the averaging effect of variation on data path. However, 3D clock network can experience unintended huge clock skew due to the different clock propagation routes on multiple stacked dies. In this paper, we analyze the on-package variation effect on 3D clock networks and show the necessity of a post silicon management method such as body biasing technique for the OPV induced 3D clock skew control in 3D stacked IC designs. Then, we present a parametric yield improvement method to mitigate the OPV induced 3D clock skew.

3D IC 열관리를 위한 TSV Liquid Cooling System

박만석,김성동,김사라은경,Park, Manseok,Kim, Sungdong,Kim, Sarah Eunkyung 한국마이크로전자및패키징학회 2013 마이크로전자 및 패키징학회지 Vol.20 No.3

TSV는 그동안 3D IC 적층을 하는데 핵심 기술로 많이 연구되어 왔고, RC delay를 줄여 소자의 성능을 향상시키고, 전체 시스템 사이즈를 줄일 수 있는 기술로 각광을 받아왔다. 최근에는 TSV를 전기적 연결이 아닌 소자의 열관리를 위한 구조로 연구되고 있다. TSV를 이용한 liquid cooling 시스템 개발은 TSV 제조, TSV 디자인 (aspect ratio, size, distribution), 배선 밀도, microchannel 제조, sealing, 그리고 micropump 제조까지 풀어야 할 과제가 아직 많이 남아있다. 그러나 TSV를 이용한 liquid cooling 시스템은 열관리뿐 아니라 신호 대기시간(latency), 대역폭(bandwidth), 전력 소비(power consumption), 등에 크게 영향을 미치기 때문에 3D IC 적층 기술의 장점을 최대로 이용한 차세대 cooling 시스템으로 지속적인 개발이 필요하다. 3D integrated circuit(IC) technology with TSV(through Si via) liquid cooling system is discussed. As a device scales down, both interconnect and packaging technologies are not fast enough to follow transistor's technology. 3D IC technology is considered as one of key technologies to resolve a device scaling issue between transistor and packaging. However, despite of many advantages, 3D IC technology suffers from power delivery, thermal management, manufacturing yield, and device test. Especially for high density and high performance devices, power density increases significantly and it results in a major thermal problem in stacked ICs. In this paper, the recent studies of TSV liquid cooling system has been reviewed as one of device cooling methods for the next generation thermal management.

3D-IC 전력 공급 네트워크를 위한 최적의 전력 메시 구조를 사용한 전력 범프와 TSV 최소화

안병규,김재환,장철존,정정화,Ahn, Byung-Gyu,Kim, Jae-Hwan,Jang, Cheol-Jon,Chong, Jong-Wha 한국전기전자학회 2012 전기전자학회논문지 Vol.16 No.2

3D-IC는 2D-IC와 비교하여 전력 공급 네트워크 설계 시에 더 큰 공급 전류와 더 많은 전력 공급 경로들 때문에 몇 가지 문제점을 가지고 있다. 전력 공급 네트워크는 전력 범프와 전력 TSV로 구성되고, 각 노드의 전압 강하는 전력 범프와 전력 TSV의 개수와 위치에 따라 다양한 값을 가지게 된다. 그래서 칩이 정상적으로 동작하기 위해서는 전압 강하 조건을 만족시키면서 전력 범프와 전력 TSV를 최적화하는 것이 중요하다. 본 논문에서는 3D-IC 전력 공급 네트워크에서 최적의 전력 메시 구조를 통한 전력 범프와 전력 TSV 최적화를 제안한다. 3-dimensional integrated circuits (3D-ICs) have some problems for power delivery network design due to larger supply currents and larger power delivery paths compared to 2D-IC. The power delivery network consists of power bumps & through-silicon-vias (TSVs), and IR-drop at each node varies with the number and location of power bumps & TSVs. It is important to optimize the power bumps & TSVs while IR-drop constraint is satisfied in order to operate chip ordinarily. In this paper, the power bumps & TSVs optimization with optimized power mesh structure for power delivery network in 3D-ICs is proposed.

Post Silicon Management of On‐Package Variation Induced 3D Clock Skew

김탁영,김태완 대한전자공학회 2012 Journal of semiconductor technology and science Vol.12 No.2

3D stacked IC is made by multiple dies (possibly) with heterogeneous process technologies. Therefore, die-to-die variation in 2D chips renders on-package variation (OPV) in a 3D chip. In spite of the different variation effect in 3D chips, generally,3D die stacking can produce high yield due to the smaller individual die area and the averaging effect of variation on data path. However, 3D clock network can experience unintended huge clock skew due to the different clock propagation routes on multiple stacked dies. In this paper, we analyze the on-package variation effect on 3D clock networks and show the necessity of a post silicon management method such as body biasing technique for the OPV induced 3D clock skew control in 3D stacked IC designs. Then, we present a parametric yield improvement method to mitigate the OPV induced 3D clock skew.

The Impedance Analysis of Multiple TSV-to-TSV

이시현,Lee, Sihyun The Institute of Electronics and Information Engin 2016 전자공학회논문지 Vol.53 No.7

In this paper, we analyze the impedance analysis of vertical interconnection through-silicon vias (TSV) that is being studied for the purpose of improving the degree of integration and an electric feature in 3D IC. Also, it is to improve the performance and the degree of integration of the three-dimensional integrated circuit system which can exceed the limits of conventional two-dimensional a IC. In the future, TSV technology in full-chip 3-dimensional integrated circuit system design is very important, and a study on the electrical characteristics of the TSV for high-density and high-bandwidth system design is very important. Therefore, we study analyze the impedance influence of the TSV in accordance with the distance and frequency in a multiple TSV-to-TSV for the purpose of designing a full-chip three-dimensional IC. The results of this study also are applicable to semiconductor process tools and designed for the manufacture of a full-chip 3D IC. 본 논문에서는 기존의 2D IC의 성능을 개선하고 3D IC의 집적도와 전기적인 특성을 개선하기 위한 목적으로 연구되고 있는 TSV (Through Silicon Via)의 임피던스를 해석하였다. 향후 Full-chip 3D IC 시스템 설계에서 TSV는 매우 중요한 기술이며, 높은 집적도와 광대역폭 시스템 설계를 위해서 TSV에 대한 전기적인 특성에 관한 연구가 매우 중요하다. 따라서 본 연구에서는 Full-chip 3D IC를 설계하기 위한 목적으로 다중 TSV-to-TSV에서 거리와 주파수에 따른 TSV의 임피던스 영향을 해석하였다. 또한 이 연구 결과는 Full-chip 3D IC를 제조하기 위한 반도체 공정과 설계 툴에 적용할 수 있다.

Bringing 3D ICs to Aerospace: Needs for Design Tools and Methodologies

Lim, Sung Kyu The Korea Institute of Information and Commucation 2017 Journal of information and communication convergen Vol.15 No.2

Three-dimensional integrated circuits (3D ICs), starting with memory cubes, have entered the mainstream recently. The benefits many predicted in the past are indeed delivered, including higher memory bandwidth, smaller form factor, and lower energy. However, 3D ICs have yet to find their deployment in aerospace applications. In this paper we first present key design tools and methodologies for high performance, low power, and reliable 3D ICs that mainly target terrestrial applications. Next, we discuss research needs to extend their capabilities to ensure reliable operations under the harsh space environments. We first present a design methodology that performs fine-grained partitioning of functional modules in 3D ICs for power reduction. Next, we discuss our multi-physics reliability analysis tool that identifies thermal and mechanical reliability trouble spots in the given 3D IC layouts. Our tools will help aerospace electronics designers to improve the reliability of these 3D IC components while not degrading their energy benefits.

Design Challenges and Solutions for Ultra-High-Density Monolithic 3D ICs

Panth, Shreepad,Samal, Sandeep,Yu, Yun Seop,Lim, Sung Kyu The Korea Institute of Information and Commucation 2014 Journal of information and communication convergen Vol.12 No.3

Monolithic three-dimensional integrated chips (3D ICs) are an emerging technology that offers an integration density that is some orders of magnitude higher than the conventional through-silicon-via (TSV)-based 3D ICs. This is due to a sequential integration process that enables extremely small monolithic inter-tier vias (MIVs). For a monolithic 3D memory, we first explore the static random-access memory (SRAM) design. Next, for digital logic, we explore several design styles. The first is transistor-level, which is a design style unique to monolithic 3D ICs that are enabled by the ultra-high-density of MIVs. We also explore gate-level and block-level design styles, which are available for TSV-based 3D ICs. For each of these design styles, we present techniques to obtain the graphic database system (GDS) layouts, and perform a signoff-quality performance and power analysis. We also discuss various challenges facing monolithic 3D ICs, such as achieving 50% footprint reduction over two-dimensional (2D) ICs, routing congestion, power delivery network design, and thermal issues. Finally, we present design techniques to overcome these challenges.