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teresa oh 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.51 No.2I
The SiOC film was deposited through a dissociation and recombination of a mixed bistrimethylsilylmethane and oxygen precursor by using plasma energy. The mixed precursor consisted of organic bistrimethylsilylmethane and inorganic oxygen. The final chemical properties of the SiOC film were divided into three types, organic, hybrid, and inorganic types, because there is the hybrid type with no polarity between the alkyl group of CH$_n$ (n = 1, 2, 3, $\cdots$) sites and the hydrophilic group of OH sites. From the results obtained by peak indexing using X-ray photoelectron spectroscopy and Fourier Transform Infrared spectroscopy, the chemical properties of the hybrid and the inorganic types were similar. The current-voltage (I-V) measurements on a pentacene-channel field-effect transistor based on the SiOC film displayed good conductivity for the hybrid-type SiOC film, but the films of the other types showed poor conductivity because the leakage current increased with increasing polarization of groups, such as CH or OH groups.
Oh, Teresa,Lee, Kwang-Man,Choi, Chi Kyu 제주대학교 공과대학 첨단기술연구소 2002 尖端技術硏究所論文集 Vol.13 No.1
In this paper, we discussed the change of the chemical bonding structure of Si-O-C composite films. Si-O-C composite films with a low dielectric constant were deposited on a p-type Si(100) substrate by an inductively coupled plasma chemical vapor deposition (ICPCVD). Mixture of Bistrimethylsilymethane (BTMSM, H_9C_3-Si-CH_2-Si-C_3H_9) and oxygen gas were used as precursor. The flow rate ratio of O_2:BTMSM(Ar) was 10sccm: 10sccm, and the annealing temperature was 300℃ and 500℃, respectively. The characteristic analysis of Si-O-C films was performed by X-ray photoelectron spectroscopy (XPS). Si-O open link of the films was increased as the Si-CH_3 stretching vibration mode and OH bonds increased during the deposition. Si-O ring link of the films was increased as the Si-CH_3 mode and OH bonds decreased after annealing at 500℃. Because of two OH bonds, H_2O evaporated and oxygen reacted with Si-O open link. Therefore Si-O-C composite films have low dielectric constant.
Generation of Si-O-C Bond without Si-$CH_3$ Bond in Hybrid Type SiOC Film
Oh, Teresa The Korean Society Of Semiconductor Display Techno 2008 반도체디스플레이기술학회지 Vol.7 No.3
The chemical shift of SiOC film was observed according to the flow rate ratio. SiOC film had the broad main band of $880\sim1190cm^{-1}$ and the sharp Si-$CH_3$ bond at $1252cm^{-1}$, and the peak position of the main bond in the infrared spectra moved to high frequency according to the increasing of an BTMSM flow rate. So the increment of the alkyl group induced the C-H bond condensation in the film, and shows the blueshift in the infrared spectra. In the case of P5000 system of Applied Materials Corporation, the strong bond of Si-CH3 bond in precursor does not enough to dissociated and ionized, because low plasma energy due to the capactive coupled CVD. Therefore, there was the sharp peak of Si-$CH_3$ bond at $1252cm^{-1}$.
Hydrogen Bonding of Low-k Materials Deposited by ICPCVD
Teresa Oh,Chi Kyu Choi,Heon-Ju Lee,Kwang-Man Lee 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.44 No.52
Fluorinated amorphous carbon lms were deposited by using an inductively coupled plasma chemical vapor deposition with a mixture of carbon tetra uoride (CF4) and methane (CH4) gases. The chemical bonding structure of the uorinated amorphous carbon lms was conrmed from sp3 carbon spectra by using X-ray photelectron spectroscopy. The intermediate H2C=CH2 double bond was broken with increasing uorine, and the uorine withdrew the carbon in the C-H bond with a bonding force. The bonding structure of the a-C:F lms consisted of sp3 carbon with four bonds which become partially cross-linked or cross-linked, which improved the adhesion and the hardness. The balanced cross-linked structure of a-C:F lms decreased the dielectric constant for the structural reasons, such as the C-H bond elongation due to the very electronegative uorine, and improved the mechanical properties due to the good adhesion and the hardness like diamond.
HOMO-LUMO Interaction between Diene and Dienophile with an Electron-Withdrawing Group
Oh, Teresa,Lee, Kwang Man,Kim, Kyung Sik,Oh, Sung Bo,Kim, Won Hyung,Choi, Chi Kyu Trans Tech Publications, Ltd. 2005 Key Engineering Materials Vol.277 No.-
<P>Recently, the carbon-centered organic system with C-H hydrogen bonds is being examined and reported with particular focus on its chemical shifts. These properties are traditionally associated with the red shifted hydrogen bond due to the weak interaction of C-H hydrogen bonds. In a few cases, however, the strengthening of the C-H bond is characterized by the blue shift. In this study, organic-inorganic hybrid silica and fluorinated amorphous carbon films have been deposited on a p-type Si (100) substrate by inductively coupled plasma chemical vapor deposition. The reason for the chemical shift in the low dielectric constant materials with C-H hydrogen bonds was researched on, and the effect of the meso-structure of the films by the inverse electron demand Diels-Alder reaction of the C=C and C=O double bond was also studied.</P>
Correlation between porosity and chemical shift
Oh, Teresa 청주대학교 산업과학연구소 2006 産業科學硏究 Vol.24 No.1
Organosilicate 박막은 산소와 bistrimethylsilylmethane 전구체의 유량비에 따라서 유기물, 하이브리드 그리고 무기물과 같은 3가지 특징으로 분류되어진다. 유기물특성의 박막은 박막내의 기공의 형성에 의해서 유전상수가 낮아진다. 본 연구에서는 유기물 특성의 Organosilicate 박막내의 공극률을 Maxwell-Garnett 등식 이용하니 계산하였다 박막의 공극률은 IR분포의 특성과 연관성이 있으며, 공극률이 증가학수록 유전상수는 감소하였다. Organosilicate films divide into three properties, organic, hybrid and inorganic depending on the flow rate ratio between oxygen and bistrimethylsilylmethane precursor. The films with organic properties show decreased dielectric constant, because of pore incorporation in final materials. In this study, the porosity of organosilicate films with organic properties was investigated using the Maxwell-Garnett equation. The porosity of the films could be correlated with their IR. properties, and increasing the porosity decreases the dielectric constant of the film.
Comparison Between Organic Thin Films Deposited by Using CCP-CVD and ICP-CVD
Teresa Oh 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.5
This study was focused on two different systems of low-dielectric-constant SiOC films, which were deposited by using capacitively coupled chemical vapor deposition (CCP-CVD) and inductively coupled chemical vapor deposition (ICP-CVD). The understanding of a low dielectric constant is an important issue in SiOC films. Reduction of the dielectric constant resulted from decreasing the thickness due to ionic and electronic polarization. The dielectric constants of SiOC films were decreased by the ionic polarization effect. The electronic polarization effect obtained from the refractive index was the difference between samples deposited by using CCP-CVD and ICP-CVD. The refractive index of SiOC film deposited by using CCP-CVD was proportional to the thickness, but the refractive index of SiOC films deposited by using ICP-CVD was not related to the thickness. Because the dissociation energy differed according to the systems, the relative contribution of the electronic polarization varied. This study was focused on two different systems of low-dielectric-constant SiOC films, which were deposited by using capacitively coupled chemical vapor deposition (CCP-CVD) and inductively coupled chemical vapor deposition (ICP-CVD). The understanding of a low dielectric constant is an important issue in SiOC films. Reduction of the dielectric constant resulted from decreasing the thickness due to ionic and electronic polarization. The dielectric constants of SiOC films were decreased by the ionic polarization effect. The electronic polarization effect obtained from the refractive index was the difference between samples deposited by using CCP-CVD and ICP-CVD. The refractive index of SiOC film deposited by using CCP-CVD was proportional to the thickness, but the refractive index of SiOC films deposited by using ICP-CVD was not related to the thickness. Because the dissociation energy differed according to the systems, the relative contribution of the electronic polarization varied.