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Mizutani, K.,Niiyama, M.,Nakano, T.,Yosoi, M.,Nozawa, Y.,Ahn, D. S.,Ahn, J. K.,Chang, W. C.,Chen, J. Y.,Daté,, S.,Gohn, W.,Hamano, H.,Hashimoto, T.,Hicks, K.,Hiraiwa, T.,Hotta, T.,Hwang, S. H.,I American Physical Society 2017 Physical Review C Vol.96 No.6
<P>Differential cross sections at t = t(min) and decay asymmetries for the gamma p -> phi p reaction have been measured using linearly polarized photons in the range 1.5 to 2.9 GeV. These cross sections were used to determine the Pomeron strength factor. The cross sections and decay asymmetries are consistently described by the t-channel Pomeron and pseudoscalar exchange model in the E-gamma region above 2.37 GeV. In the lower energy region, an excess over the model prediction is observed in the energy dependence of the differential cross sections at t = t(min). This observation suggests that additional processes or interference effects between Pomeron exchange and other processes appear near the threshold region.</P>
Chang, S.-J.,Bhuiyan, M. A.,Won, C.-H.,Lee, J.-H.,Jung, H. W.,Shin, M. J.,Lim, J.-W.,Lee, J.-H.,Ma, T. P. Electrochemical Society 2016 ECS journal of solid state science and technology Vol.5 No.12
<P>Various GaN channel thicknesses (0.5, 2.0, 3.5 and 6.3 mu m) grown by metal organic vapor chemical deposition (MOCVD) on sapphire substrate were prepared to investigate the effects of the channel thickness on the transistor characteristics. X-ray diffraction (XRD), pulsed I-D(V-D), as well as gate stress and DC measurements were employed in this study. The results have revealed that charge trapping in the AlGaN/GaN hetero-structure is reduced and transistor performance is improved as the GaN channel thickness is increased up to a certain value (T-GaN_Channel = 3.5 mu m); More specifically, as the GaN channel thickness is increased from 0.5 mu m to 3.5 mu m, the sheet resistance and carrier mobility values are changed from 475 to 400 Omega/square and 780 to 1100 cm(2)/Vs, respectively. These results are attributed to the ameliorated crystalline quality when the GaN thickness increases as evidenced by the XRD data. (C) 2016 The Electrochemical Society. All rights reserved.</P>
방사형차트를 이용한 국가 에너지 및 전력 생산원의 사회적 영향 종합평가
김태운(T.W. Kim),김성호(S. Ho Kim),문기환(K.-H. Moon),하재주(J.J. Ha),김홍채(H.C. Kim),장순홍(S.H. Chang) 한국에너지학회 2004 한국에너지공학회 학술발표회 Vol.2004 No.-
국가의 다양한 전력생산시스템(원자력, 석탄, 중유, LNG, 수력 발전원 등)에 대한 사회적 영향을 종합적으로 비교하기 위하여 고려된 평가항목으로서 산업적 경제성, 개인적 보건영향(리스크), 환경영향 및 국가차원의 기여도 등이 선택되었다. 각 평가항목은 특히 발전단가, 추정사망자수, 이산화탄소 배출량, 연료수급 안정성 등에 의하여 대표되었다. 이러한 다기준 의사결정 문제의 평가방법을 개발하기 위한 예비적 연구단계로서 방사형 차트를 이용한 표현방법을 도입하였다. 이 연구에서는 이러한 사회적 영향 다이어그램을 이용하여 각 발전원의 사회적 영향의 다른 점을 쉽게 가시화할 수 있었다. 이 연구결과에 기초하여 정성적/정량적 종합비교 방법론이 개발될 예정이다. In the present work, for various energy and electricity generating systems to be compared in view of integrated social impacts, nuclear, coal-fired, heavy oil-fired, and LNG, and hydroelectricity systems are considered as electricity generating options. The following assessment factors are selected: economic effect, health effect, environmental effect, and benefit at the national level. As a preliminary study, these factors are represented as power generation cost, estimated mortality. Carbon Dioxide gas emission, and fuel supply stability, respectively. For integrated representation of a multi-criteria decision-making (MCDM) problem, radar charts are introduced to facilitate a comparative recognition of estimates. In the near future, based on the estimates, a MCDM methodology for both qualitative and quantitative comparison will be developed.
Chang, H . K .,Kim, S . G .,Cheong, B .,Kim, W . M .,Chung, M .,Lee, T . S .,Lee, J . K . 대한금속재료학회(대한금속학회) 1998 METALS AND MATERIALS International Vol.4 No.6
Constant-pressure molecular dynamics simulations are carried out to study the liquid-amorphous-crystalline transition behavior in a model system composed of 500 Leonard-Jones particles under three-dimensional periodic boundary conditions. The critical quenching rate (CQR) for amorphization, i.e., the minimum rate above which no crystallization occurs on quenching, is found to be about 5.52 × 10^(12) K/s for a one-component, unary system. For lower quenching rates, the amorphous phase transforms to a crystalline phase with 0.30.5 of the melting point as the transition temperature. A binary system with a misfit in atomic size shows a smaller CQR, while a system with a higher bond strength for solute atoms requires a greater CQR. A crystallizakion behavior of an amorphous phase on repeating is also studied. Its crystallization temperature depends on the history: the higher the quenching rate for amorphization, the higher the crystallization temperature.
TOPOLOGICALLY CONSISTENT TRIMMED SURFACE APPROXIMATIONS BASED ON TRIANGULAR PATCHES
Rida T. FAROUKI,Chang Yong HAN,Joel HASS,Thomas W. SEDERBERG 한국산업응용수학회 2005 한국산업응용수학회 학술대회 논문집 Vol.- No.-
Topologically consistent algorithms for the intersection and trimming of free-form parametric surfaces are of fundamental importance in computer-aided design, analysis, and manufacturing. Since the intersection of (for example) two bicubic tensor-product surface patches is not a rational curve, it is usually described by approximations in the parameter domain of each surface. If these approximations are employed as "trim curves", their images in ?³ do not agree precisely, and the resulting trimmed surfaces may exhibit "gaps" and "overlaps" along their common edge, an artifact that often incurs failure of downstream applications. We present a direct and simple approach to the problem, wherein the intersection curve is described explicitly by the sides of a sequence of triangular Bezier patches. Instead of representing trimmed surfaces by trim curves in the surface parameter domain, together with appropriate control point perturbations to guarantee consistency, we use triangular patches to directly approximate the intersection curve and the trimmed surfaces it defines. The triangular patches are constructed so as to maintain smooth (i.e., tangent-plane continuous) connections to untrimmed patches of the original surface. We assume that the original intersecting surfaces are subject to a subdivision process, such that the intersection segment (if any) on each sub-patch is a smooth arc between diametrically opposite corners. This guarantees that all intersection segments, and the trimmed surfaces they delineate, are "simple" enough to admit accurate approximation using triangular Bezier patches. Ensuring position and tangent plane agreement of degree-n triangular trimmed patch approximations p(r, s, t) and q(u, v, w) with given degree-(m, m) tensor-product patches p(r, s) and q(u, v) along the boundaries r = 0, s = 0 and u = 0, v = 0, and that the curve p(??, 1-??, 0) = q(??, 1-??, 0) matches the end points and tangents of the exact intersection, entails solving a linear system of 8m + 4n - 14 equations in 12n - 28 scalar variables. Although much of the ensuing discussion will be cast in a general context, our primary emphasis is the case of greatest practical interest-namely, the approximation of trimmed bicubic patches by quintic triangular patches. In this case, the tangent-plane matching conditions on the common patch sides entail solution of a linear system of 30 equations in 32 unknowns. Subsequent to solving this system, the degrees of freedom that remain to improve the approximation accuracy are the end-derivative magnitudes of the approximate intersection curve and is its two middle control points, and one "interior" control point for each triangular patch. Additional degrees of freedom may be introduced, to further improve the approximation accuracy, by elevating the degree of the quintic triangular patches. The elegant simplicity of this method, and the well-conditioned nature of the linear system that expresses the boundary conditions, makes it eminently suited to practical implementation. Many of the basic principles hold in contexts other than interesting bicubic patches with trimmed surfaces approximated by quintic triangular patches, although we expect this combination will be of greatest practical interest. The final trimmed surfaces resulting from the procedure described herein are hybrid collections of tensor-product (rectangular) patches and triangular patches. If homogeneity of the patch types in the final surface representation is an important consideration, known algorithms for converting a triangular patch into a set of tree rectangular patches or for splitting a rectangular patch into two triangular patches may be invoked.