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Jang, Kyungsoo,Lee, Sojin,Nguyen, Thi Cam Phu,Park, Heejun,Kim, Jungsoo,Shin, Donggi,Lee, Youn-Jung,Kim, Youngkuk,Yi, Junsin IOP 2018 Semiconductor science and technology Vol.33 No.12
<P>Non-volatile memory (NVM) devices using carbon dioxide (CO<SUB>2</SUB>) and nitrous oxide (N<SUB>2</SUB>O) plasma-assisted tunneling layers have outstanding electrical properties measured at 300 K. However, the retention characteristics of NVM devices using CO<SUB>2</SUB> and N<SUB>2</SUB>O plasma-assisted tunneling oxides are different at 360 K. The memory window of an NVM device using CO<SUB>2</SUB> tunneling oxide was about 2.01 V (81.7%) after 10 years at 360 K. However, there was retention charge loss in the NVM device using a N<SUB>2</SUB>O tunneling layer at 360 K due to the temperature instability under negative bias. For an actual NVM device using N<SUB>2</SUB>O tunneling oxide, the memory window was reduced to about 1.58 V (65.6%) after 10 years at 360 K.</P>
Jang, Kyungsoo,Iftiquar, S. M.,Lee, Youn-Jung,Jung, Junhee,Kim, Taeyong,Kang, Seungmin,Lee, Sojin,Cho, Jaehyun,Yi, Junsin American Scientific Publishers 2016 Journal of Nanoscience and Nanotechnology Vol.16 No.11
<P>We report a reasonable method for determination of optical band gap (E-g) and germanium content (x) of hydrogenated micro-crystalline silicon-germanium (mu c-Si1-xGex:H) thin-film by using ultraviolet-visible (UV-visible) and Auger electron spectroscopy (AES) measurements. For reasonable extraction of the E-g of mu c-Si1-xGex:H film, we used a plot of (alpha h nu)(1/4) versus photon energy (E-ph) for a wide range of E-ph. The simplest explanation of the 1/4 power could be a superposition of absorptions from micro-crystalline structure. We also measured the x as a function of E-g of the mu c-Si1-xGex:H thin-film. Using UV-visible, E-g was measured to be varying from 1.043 to 1.079 eV and x was extracted to be between 0.107 to 0.188. From AES measurements, the E-g was extracted between 1.045 to 1.075 eV while x was measured between 0.110 to 0.182. The results of the comparative analysis of UV-visible and AES measurement were performed.</P>
산화물 반도체의 다양한 처리를 통한 박막트랜지스터의 전기적 특성 향상
김태용,장경수,이소진,강승민,이윤정,이준신,Kim, Taeyong,Jang, Kyungsoo,Raja, Jayapal,Phu, Nguyen Thi Cam,Lee, Sojin,Kang, Seungmin,Trinh, Than Thuy,Lee, Youn-Jung,Yi, Junsin 한국전기전자재료학회 2016 전기전자재료학회논문지 Vol.29 No.1
The ultimate aims of display market is transparent or flexible. Researches have been carried out for various applications. It has been possible to reduced the process steps and get good electrical properties for semiconductors with large optical bandgaps. Oxide semiconductors have been established as one of the leading and promising technology for next generation display panels. In this paper, alternative treatment processes have been tried for oxide semiconductors of thin film transistors to increase the electrical properties of the thin film transistors and to investigate the mechanisms. There exist a various oxide semiconductors. Here, we focused on InGaZnO, ZnO and InSnZnO which are commercialized or researched actively.
고이동도 산화물 반도체 박막 트랜지스터 구현을 위한 구동전류 향상
장경수,김태용,강승민,이소진,이윤정,이준신,Jang, Kyungsoo,Raja, Jayapal,Kim, Taeyong,Kang, Seungmin,Lee, Sojin,Nguyen, Thi Cam Phu,Than, Thuy Trinh,Lee, Youn-Jung,Yi, Junsin 한국전기전자재료학회 2015 전기전자재료학회논문지 Vol.28 No.6
Next-generation displays should be transparent and flexible as well as having high resolution and frame number. The main factor for active matrix organic light emitting diode and next-generation displays is the development of TFTs (thin-film transistors) with high mobility and large area uniformity. The TFTs used for transparent displays are mainly oxide TFT that has oxide semiconductor as channel layer. Zinc-oxide based substances such as indium-gallium-zinc-oxide has attracted attention in the display industry. In this paper, the mobility improvement of low cost oxide TFT is studied for fast operating next-generation displays by overcoming disadvantages of amorphous silicon TFT that has low mobility and poly silicon TFT that requires expensive equipment for complex process and doping process.