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정준호,정귀상,Shigehiro Nishino 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.52 No.1
This paper describes the Raman scattering characteristics of polycrystalline (poly) 3C-SiC films, which were deposited on thermally oxidized Si(100) substrates by using the atmosphere pressure chemical vapor deposition (APCVD) method at various growth temperatures. The TO and the LO phonon modes for 2.0 m-thick poly 3C-SiC deposited at 1180℃ were observed at 794.4 and 965.7 cm-1, respectively. From the intensity ratio of I(LO)/I(TO) 1.0 and the broad full width half maximum (FWHM) of the TO modes, 3C-SiC was clearly seen to form polycrystals instead of disordered crystals and the crystal defects were seen to be small. At the interface between 3C-SiC and SiO2, 1122.6 cm-1 related to C-O bonding was measured. Here, poly 3C-SiC admixes with nanoparticle graphite with the Raman shifts of the D and the G bands of C-C bonding 1355.8 and 1596.8 cm-1. Using the TO mode for 2.0 m thick poly 3C-SiC, we calculated the biaxial stress as 428 MPa. This paper describes the Raman scattering characteristics of polycrystalline (poly) 3C-SiC films, which were deposited on thermally oxidized Si(100) substrates by using the atmosphere pressure chemical vapor deposition (APCVD) method at various growth temperatures. The TO and the LO phonon modes for 2.0 m-thick poly 3C-SiC deposited at 1180℃ were observed at 794.4 and 965.7 cm-1, respectively. From the intensity ratio of I(LO)/I(TO) 1.0 and the broad full width half maximum (FWHM) of the TO modes, 3C-SiC was clearly seen to form polycrystals instead of disordered crystals and the crystal defects were seen to be small. At the interface between 3C-SiC and SiO2, 1122.6 cm-1 related to C-O bonding was measured. Here, poly 3C-SiC admixes with nanoparticle graphite with the Raman shifts of the D and the G bands of C-C bonding 1355.8 and 1596.8 cm-1. Using the TO mode for 2.0 m thick poly 3C-SiC, we calculated the biaxial stress as 428 MPa.
Si(100) 기판 위에 성장돈 3C-SiC 박막의 물리적 특성
정귀상,정연식,Shigehiro Nishino 한국전기전자재료학회 2002 전기전자재료학회논문지 Vol.15 No.11
Single crystal 3C-SiC (cubic silicon carbide) thin-films were deposited on Si(100) wafer up to the thickness of 4.3 ${\mu}{\textrm}{m}$ by APCVD (atmospheric pressure chemical vapor deposition) method using HMDS (hexamethyildisilane; {CH$_{3}$}$_{6}$ Si$_{2}$) at 135$0^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC film was 4.3 ${\mu}{\textrm}{m}$/hr. The 3C-SiC epitaxial film grown on Si(100) wafer was characterized by XRD (X-ray diffraction), AFM (atomic force microscopy), RHEED (reflection high energy electron diffraction), XPS (X-ray photoelecron spectroscopy), and Raman scattering, respectively. Two distinct phonon modes of TO (transverse optical) near 796 $cm^{-1}$ / and LO (longitudinal optical) near 974$\pm$1 $cm^{-1}$ / of 3C-SiC were observed by Raman scattering measurement. The heteroepitaxially grown film was identified as the single crystal 3C-SiC phase by XRD spectra (2$\theta$=41.5。).).
CVD 절연막을 이용한 3C-SiC 기판의 초기직접접합에 관한 연구
정귀상,정연식,Shigehiro Nishino 한국전기전자재료학회 2002 전기전자재료학회논문지 Vol.15 No.10
SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECYD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of 5.3 kgf/cm$^2$to 15.5 kgf/cm$^2$.
4H-SiC(0001) Epilayer 성장 및 쇼트키 다이오드의 전기적 특성
박치권,이원재,신병철,Park, Chi-Kwon,Lee, Won-Jae,Nishino Shigehiro,Shin, Byoung-Chul 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.4
A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. We aimed to systematically investigate the dependence of SiC epilayer quality and growth rate during the sublimation growth using the CST method on various process parameters such as the growth temperature and working pressure. The etched surface of a SiC epitaxial layer grown with low growth rate $(30{\mu}m/h)$ exhibited low etch pit density (EPD) of ${\sim}2000/cm^2$ and a low micropipe density (MPD) of $2/cm^2$. The etched surface of a SiC epitaxial layer grown with high growth rate (above $100{\mu}m/h$) contained a high EPD of ${\sim}3500/cm^2$ and a high MPD of ${\sim}500/cm^2$, which indicates that high growth rate aids the formation of dislocations and micropipes in the epitaxial layer. We also investigated the Schottky barrier diode (SBD) characteristics including a carrier density and depletion layer for Ni/SiC structure and finally proposed a MESFET device fabricated by using selective epilayer process.
SiC Epitaxial Layers Grown by Sublimation Method and their Electrical Properties
Park, Chi Kwon,Lee, Gi Sub,Lee, Ju Young,Kyun, Myung Ok,Lee, Won Jae,Shin, Byoung Chul,Nishino, Shigehiro Trans Tech Publications, Ltd. 2007 Materials science forum Vol.556 No.-
<P>A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. In this study, we aimed to systematically investigate surface morphologies and electrical properties of SiC epitaxial layers grown with varying a SiC/Al ratio in a SiC source powder during the sublimation growth using the CST method. It was confirmed that the acceptor concentration of epitaxial layer was continuously decreased with increasing the SiC/Al ratio. The blue light emission was successfully observed on a PN diode structure fabricated with the p-type SiC epitaxial layer. Furthermore, 4H-SiC MESFETs having a micron-gate length were fabricated using a lithography process and their current-voltage performances were characterized.</P>
Lee, Tae Woo,Yeo, Im Gyu,Shin, Byoung Chul,Lee, Won Jae,Park, Mi Seon,Hwang, Hyun Hee,Nishino, Shigehiro Trans Tech Publications, Ltd. 2011 Materials science forum Vol.679 No.-
<P>We adopted HMDS(Hexamethyledisilane) as a SiC(Silicon carbide) source material for epitaxial growth of 3C-SiC on Si substrate. Various growth profiles were investigated to optimize hetero-epitaxial growth of 3C-SiC layers. We also focused on the homogeneous film deposition of 3C-SiC on Si by employing two susceptor shapes, flat and tilted susceptors, to control a thickness of the boundary layer formed on the Si substrate. Fringe color patterns were observed on 3C-SiC layer on Si and hence it was easy to characterize the film uniformity by analyzing this color. 3C-SiC epitaxial layers were systematically analyzed by an optical microscope, a Raman spectroscopy, a SEM and an XRD.</P>
CST 승화법을 이용한 p-type 4H-SiC(0001) 에픽텍셜층 성장과 이를 이용한 MESFET 소자의 전기적 특성
이기섭,박치권,이원재,신병철,Lee, Gi-Sub,Park, Chi-Kwon,Lee, Won-Jae,Shin, Byoung-Chul,Nishino, Shigehiro 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.12
A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. In this study, we aimed to systematically investigate surface morphologies and electrical properties of SiC epitaxial layers grown with varying a SiC/Al ratio in a SiC source powder during the sublimation growth using the CST method. The surface morphology was dramatically changed with varying the SiC/Al ratio. When the SiC/Al ratio of 90/1 was used, the step bunching was not observed in this magnification and the ratio of SiC/Al is an optimized range to grow of p-type SiC epitaxial layer. It was confirmed that the acceptor concentration of epitaxial layer was continuously decreased with increasing the SiC/Al ratio. 4H-SiC MESFETs haying a micron-gate length were fabricated using a lithography process and their current-voltage performances were characterized. It was confirmed that the increase of the negative voltage applied on the gate reduced the drain current, showing normal operation of FET device.