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VOCs Detection Based on Evanescent Wave Coupling of Dye-Coated Optical Fiber
Se-Hyuk Yeom,Byoung-Ho Kang,Chang-Taek Seo,Dong-Ic Lee,Han-Jae Shin,Sang-Chul Lim,Myung-Chan An,Sang-Won Lee,Jae-Sung Lee,Shin-Won Kang IEEE 2015 IEEE SENSORS JOURNAL Vol.15 No.5
<P>We propose a design for a highly sensitive volatile organic compounds (VOCs) sensor based on evanescent wave coupling of a side-polished optical fiber. The surface of the side-polished optical fiber coupled with a coated solvatochromic dye has charge-transfer (CT) properties. In the proposed model, the application of these optical properties and the novel solvatochromic dye helped overcome problems caused by limited sensitivity, selectivity, and dynamic range that are encountered in typical gas sensors. The different polarities of the VOCs cause changes in the effective refractive index of the sensing membrane owing to CT properties. This can lead to a change in the resonance wavelength of the side-polished optical fiber. To ascertain the effectiveness of the sensor, five VOCs dimethylamine, acetic acid, toluene, benzene, and ethanol were tested, and the enhance in sensitivity was analyzed for varying concentrations. According to the results, the proposed gas sensor showed high sensitivity and resolution.</P>
치매환자 실종방지를 위한 대중교통 기반 위치관리 플랫폼 개발
Se-Hyuk Yeom,이왕훈,손선영,Jungsik Koo 한국센서학회 2019 센서학회지 Vol.28 No.6
As we become an aging society, the number of dementia patients increases every year (an estimated 10% of the elderly, equating to 1.27 million in 30 years). In addition, 17,000 cases of missing people with disabilities and dementia are reported annually, indicating that more than one person per hour goes missing. More than 50% of those who are lost suffer injuries (some of which are fatal) within 24 hours after going missing. This is why measures are urgently required to ensure safety of the elderly. The core function of the disappearances prevention system proposed by this research group is to identify and respond early to deviations of dementia patients from their homes or facilities by identifying the location of the occurrence of disappearance, so that real-time notifications occur when a they leave the protected area. In addition, multiple receivers and public transportation integrated terminals share information when a patient leaves and uses public transportation to ensure their safe return. Most existing beacon-based positioning service models have fixed signal transmitters and are serviced in the form of transport receivers, but the proposed service model has users wearing the BLE beacon and receivers fixed.
se jin kyung,Geun young yeom,chan woo kim,jun hee lee,yong hyuk lee 한국물리학회 2005 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.47 No.2
In this study, carbon nanotubes were grown on NiCr(10 nm)/Cr(100 nm)/glass substrates by using atmospheric-pressure plasma-enhanced chemical vapor deposition (AP-PECVD) with acetylene (C2H2) as the carbon source gas at 400C, and the effects of pre-treatment, such as annealing at 400C in N2 and an NH3/He plasma treatment, on the growth characteristics of the carbon nanotubes were investigated. Carbon nanotubes were grown only on the samples treated with the NH3/He plasma; nearly no carbon nanotubes were grown on the as-deposited samples or on the on the samples annealed at 400C in N2. The carbon nanotubes grown on the sample treated with the NH3/He plasma appear to be related to enhanced carbon diffusion to the Ni catalyst particles because its the cleaner Ni surface to be cleaner than that of the annealed sample and Ni surface area with nanosized Ni particles is larger than that of the as-deposited sample. Because the grown carbon nanotubes were multi-walled carbon nanotubes with defects on the walls. The inner diameters of the grown carbon nanotubes were 3~ 5 nm, and the outer diameters were 20 ~ 40 nm.
Lee, Yong-Hyuk,Kyung, Se-Jin,Jeong, Chang-Hyun,Yeom, Geun-Young The Japan Society of Applied Physics 2005 Japanese journal of applied physics Vol.44 No.1
<P>In this study, the effects of N<SUB>2</SUB> flow rate in the He/O<SUB>2</SUB>/N<SUB>2</SUB> gas mixture on the characteristics of a pin-to-plate dielectric barrier discharge (DBD) having the size of 100mm×1000mm have been investigated for the application to flat panel display processing such as photoresist ashing. The pin-to-plate DBD showed about 70–120% higher photoresist ashing rate at the same applied voltage compared to the conventional DBD. The addition of 3 slm of N<SUB>2</SUB> to He(10 slm)/O<SUB>2</SUB>(3 slm) showed the highest photoresist ashing rate of about 580 nm/min for the pin-to-plate DBD at 12 kV of AC voltage. The increase of N<SUB>2</SUB> flow rate in He/O<SUB>2</SUB> gas mixture up to 3 slm appeared to increase the density of N<SUB>2</SUB><SUP>+</SUP> ions and N<SUB>2</SUB> metastables while the oxygen atomic density appeared to decrease continuously. The increase of photoresist ashing rate with the increase of N<SUB>2</SUB> flow rate up to 3 slm was related to the increase of the substrate surface temperature by the increased collision of N<SUB>2</SUB><SUP>+</SUP> ions and N<SUB>2</SUB> metastables with the substrate.</P>
Lee, Yong-Hyuk,Kyung, Se-Jin,Lim, Jong-Hyuk,Yeom, Geun-Young The Japan Society of Applied Physics 2005 Japanese journal of applied physics Vol.44 No.46
<P>In this study, the effect of the plasma ashing of the photoresist on a-Si:H thin film transistor (TFT) devices carried out using an atmospheric pressure plasma on the electrical damage to the TFT devices was investigated. By exposing the TFT devices to the plasma with a photoresist ashing rate of about 860 nm/min for up to 120 s, their electrical characteristics were significantly degraded, possibly due to charge trapping in the SiN<I><SUB>x</SUB></I> of the passivation layer and gate insulator and to bond breaking in a-Si:H. The degradation of the field effect mobility, <I>I</I><SUB>off</SUB>, and <I>I</I><SUB>on</SUB>/<I>I</I><SUB>off</SUB> ratio of the devices is believed to be mostly related to the bond breaking in the a-Si:H and charge trapping caused by the UV radiation, while the change in the threshold voltage appears to be mostly related to the surface charging caused by the charged species in the plasma. The damaged TFT devices, however, could be fully repaired by conventional annealing in a furnace at 290°C in N<SUB>2</SUB> for 60 min.</P>
장은윤 ( Eun Yoon Jang ),염세혁 ( Se Hyuk Yeom ),엄년식 ( Nyeon Sik Eum ),한정현 ( Jung Hyun Han ),김형경 ( Hyung Kyung Kim ),신용범 ( Yong Beom Shin ),강신원 ( Shin Won Kang ) 한국센서학회 2013 센서학회지 Vol.22 No.2
In this research, we developed a biosensor to detect lung cancer-specific biomarker using Anodic Aluminum Oxide (AAO) chip based on interference and nano surface plasmon resonance (nanoSPR). The nano-porous AAO chip was fabricated 2 μm of pore-depth by twostep anodizing method for surface uniformity. NanoSPR has sensitivity to the refractive index (RI) of the surrounding medium and also provides simple and label-free detection when specific antibodies are immobilized to the Au-deposited surface of nano porous AAO chip. To detect the lung cancer-specific biomarker, antibodies were immobilized on the surface of the chip by Self Assembled Monolayer (SAM) method. Since then lung cancer-specific biomarker was applied atop the antibodies immobilized layer. The specific reaction of the antigen-antibody contributed to the change in the refractive index that cause shift of resonance spectrum in the interference pattern. The Limit of Detection (LOD) was 1 fg/ml by using our nano-porous AAO biosensor chip.
Kwon Jin-Beom,김세완,Kang Byoung-Ho,Yeom Se-Hyuk,Lee Wang-Hoon,Kwon Dae-Hyuk,이재성,강신원 나노기술연구협의회 2020 Nano Convergence Vol.7 No.28
InGaAs-based photodetectors have been generally used for detection in the short-wave infrared (SWIR) region. However, the epitaxial process used to grow these materials is expensive; therefore, InGaAs-based photodetectors are limited to space exploration and military applications. Many researchers have expended considerable efforts to address the problem of SWIR photodetector development using lead sulfide (PbS) quantum dots (QDs). Along with their cost-efficient solution processability and flexible substrate compatibility, PbS QDs are highly interesting for the quantum-size-effect tunability of their bandgaps, spectral sensitivities, and wide absorption ranges. However, the performance of PbS QD-based SWIR photodetectors is limited owing to inefficient carrier transfer and low photo and thermal stabilities. In this study, a simple method is proposed to overcome these problems by incorporating CdS in PbS QD shells to provide efficient carrier transfer and enhance the long-term stability of SWIR photodetectors against oxidation. The SWIR photodetectors fabricated using thick-shell PbS/CdS QDs exhibited a high on/off (light/dark) ratio of 11.25 and a high detectivity of 4.0 × 1012 Jones, which represents a greater than 10 times improvement in these properties relative to those of PbS QDs. Moreover, the lifetimes of thick-shell PbS/CdS QD-based SWIR photodetectors were significantly improved owing to the self-passivation of QD surfaces.