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박충열,김병국 전남대학교 치의학연구소 2001 구강과학 Vol.13 No.3
The present study was aimed to aid the diagnosis and choose the approrpiate treatment method of the fracture. This is the retrospective clinicostatistical study about 87 patients who were treated about condylar fractures for recent 4 years from Apr. 1, 1996 to Apr. 30, 2000 in Chonnam National University Hospital and can be followed up reguarly. In the incidence of fractures, subjects in the twenties has highest incidence and male has 4.1 time higher prevalance than in female. The fracture was at the highest incidence in September. The most common cause of the fracture was traffic accident (40.2%), and in case of middle facial concomitant injuries, laceration was 45.1% and the fracture of symphysis was 57.1% in lower facial injuries. The most common site of the fracture was the condylar neck, followed by subcondye and condylar head in order. patients aged under 11 years were treated closed reduction which was 100% and for those aged over 19 years, open reduction (68%) was preferred. Most of them were fixed with metal miniplate in case of open reduction. The average period of fixation was 9.8 days, of which was 11.8 days for closed reduction and 8.5 days for open reduction. The average maximal mouth opening was lower in case of open reduction than in closed reduction in condylar head fracture. Closed reduction and direct fixation with Risdon showed better functional recovery than in SVRO cases. The complications like fibrous ankylosis and bone resorption of TMJ was happened in the case of open reduction with SVRO. These results suggest that the condylar fracture will be treated with closed reduction if patients are growing children and the fractured condyle was not displaced, otherwise the open reduction will be preferred. The closed reduction and the direct fixation with Risdon method showed better functional recovery than in SVRO method.
알루미늄과 헤테로폴리산으로 개질된 메조포러스 실리카 상에서의 AKD 합성
김현국,우창수,최재석,박민태,이병민,이호인 한국공업화학회 2003 응용화학 Vol.7 No.1
AKD(alkyl ketene dimer) used widely as a neutral sizing agent is produced industrially by halogenization of stearic acid followed by dimerization of alkyl ketene. In the present work, to suppress the byproduct of hydrochloric acid and to improve reaction pathway. AKD was prepared through of ketene intermediate by dehydration of stearic acid in gas phase using reaction with silanol on silica as active sites of the catalyst SBA-15 showed the highest activity due to the large and open tubular pores. It was found that main products were dimer and trimer. Our goal of the present work was to increase of the selectivity for the dimer.
Park, Byung-Gook,Choi, Byung Yong,Choi, Woo Young,Lee, Yong Kyu,Lee, Jong Duk,Shin, Hyungcheol,Sung, Suk-Kang,Kim, Tae-Yong,Cho, Eun Suk,Cho, Byung Kyu,Bai, Keun Hee,Kim, Dong-Dae,Kim, Dong-Won,Lee, C The Japan Society of Applied Physics 2005 Japanese journal of applied physics Vol.44 No.37
<P>Thanks to the combination of damascene gate and outer poly-Si sidewall spacer process, we have successfully fabricated twin silicon–oxide–nitride–oxide–silicon (SONOS) memory (TSM) transistors with 20-nm twin nitride storage nodes under an 80-nm gate. In terms of device manufacturability, the damascene gate process makes it possible to realize physically separated structure and the outer poly-Si sidewall spacer scheme contributes to realization of 20-nm long nitride storage node. Compared with conventional SONOS transistor, the fabricated TSM transistor maintains its threshold voltage margin between the forward and reverse reads down to 80-nm long gate. The TSM transistor also shows stable and reliable characteristics: up to 10<SUP>5</SUP> program/erase cycles endurance and fairly good bake retention at 150°C.</P>
Park, Taehyung,Kim, Jang Hyun,Kim, Hyun Woo,Park, Euyhwan,Lee, Junil,Park, Byung-Gook American Scientific Publishers 2016 Journal of Nanoscience and Nanotechnology Vol.16 No.10
<P>A Si capping layer on a SiGe channel is essential to improve the interface properties between the SiGe channel and the gate insulator. Thus, devices with a Si capping layer should be analyzed to understand their electrical characteristics. In this paper, a strained Si/SiGe heterojunction TFET is investigated via capacitance-voltagemeasurements, which are rapid and non-destructive. The C-V analysis method in a strained Si/SiGe heterojunction TFET is improved through TCAD simulations. Through a C-V analysis, important parameters pertaining to devices, such as the layer thicknesses and threshold voltages, can be extracted.</P>