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Kazuhiro Nishikawa,Satoshi Ogata,Toshihiro Shoyama,Wan-Sick Cho,Tae-Sick Yoon,Masakiyo Tsunoda,Migaku Takahashi 한국자기학회 2002 Journal of Magnetics Vol.7 No.3
Three fabrication techniques for forming thin barrier layer with uniform thickness and large barrier height in magnetic tunnel junction (MTJ) are discussed. First, the effect of immiscible element addition to Cu layer, a high conducting layer generally placed under the MTJ, is investigated in order to reduce the surface roughness of the bottom ferromagnetic layer, on which the barrier is formed. The Ag addition to the Cu layer successfully realizes the smooth surface of the ferromagnetic layer because of the suppression of the grain growth of Cu. Second, a new plasma source, characterized as low electron energy of 1 eV and high density of 10¹² ㎝-³, is introduced to the Al oxidation process in MTJ fabrication in order to reduce damages to the barrier layer by the ion-bombardment. The magnetotransport properties of the MTJs are investigated as a function of the annealing temperature. As a peculiar feature, the monotonous decrease of resistance area product (RA) is observed with increasing the annealing temperature. The decrease of the RA is due to the decrease of the effective barrier width. Third, the influence of the mixed inert gas species for plasma oxidization process of metallic Al layer on the tunnel magnetoresistance (TMR) was investigated. By the use of Kr-O₂ plasma for Al oxidation process, a 58.8% of MR ratio was obtained at room temperature after annealing the junction at 300℃, while the achieved TMR ratio of the MTJ fabricated with usual Ar-O₂ plasma remained 48.4%. A faster oxidization rate of the Al layer by using Kr-O₂ plasma is a possible cause to prevent the over oxidization of Al layer and to realize a large magnetoresistance.
Young-Jun Park,Tomotaro Nishikawa,Kazuhiro Nemoto,Kenichi Matsushima,Mineo Minami,Makoto Kawase 한국육종학회 2012 한국육종학회 심포지엄 Vol.2012 No.07
We investigated the expression patterns of a granule-bound starch synthase I (GBSSI = Waxy) gene at different developmental stages of storage and non-storage organs in Amaranthus cruentus. GBSSI transcripts were strongly expressed in the middle and mid-late stages of seed development and thereafter expression decreased. In addition, this gene was expressed in all non-storage organs tested (the leaf, stem, petiole and root) and showed a tendency to increase during plant development. Therefore, our results indicate that the amaranth GBSSI gene exhibits late expression in the perisperm, and that it is expressed in both storage and non-storage tissues. We also investigated the genetic diversity of GBSSI among 37 strains of amaranth grains originating from New World. A comparison of the GBSSI coding sequence revealed an extremely high level of sequence conservation, and a single nucleotide polymorphism between the sequences of non-waxy (Type I) and waxy (Type II) phenotypes was detected. This indicates that a G–T polymorphism in exon 10 (a nonsense mutation) was a unique event in the evolution of the GBSSI gene in amaranth grains.