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Suk, Hye Jung,Lee, Dong Hun,Ka, Jae-Won,Kim, Jinsoo,Kwon, Tae-Woo,Park, Dong-Kyu,Yi, Mi Hye,Ahn, Taek American Scientific Publishers 2012 Journal of Nanoscience and Nanotechnology Vol.12 No.4
<P>We modified the surface of a polyvinyl alcohol (PVA) layer by self assembly monolayer technique using a fluorine substituted silane compound (1H,1H,2H,2H-perfluorooctyl-trichlorosilane: FTS) to protect a pentacene thin-film transistor (TFT) from O2 and H2O. Surface modified PVA showed very low surface energy with water contact angle of 106.2 degrees. Surface treatment of PVA layer on pentacene TFT device was done in toluene solvent and we did not observe any damage to the PVA layer or pentacene TFT devices during surface modification process. Pentacene TFT with surface modified PVA passivation layer exhibited very stable TFT operation with almost no field effect mobility drop or threshold voltage shift up to 400 hrs. The performance of unpassivated OTFTs exponentially degraded and almost failed in 290 hrs. We propose that modified PVA layer can be used as a good passivation layer for oxygen and water in OTFT.</P>
Won, J.M.,Suk, H.J.,Wee, D.,Kim, Y.H.,Ka, J.W.,Kim, J.,Ahn, T.,Yi, M.H.,Jang, K.S. Elsevier Science 2013 Organic electronics Vol.14 No.7
Surface properties of gate insulators strongly affect the device performance of organic thin-film transistors (OTFTs). To improve the performance of OTFTs, we have developed photo-sensitive polyimide gate insulator with fluorine groups. The polyimide gate insulator film could be easily patterned by selective UV exposure without any photoinitiator. The polyimide gate insulator film, fabricated at 130<SUP>o</SUP>C, has a dielectric constant of 2.8 at 10kHz, and leakage current density of <1.6x10<SUP>-10</SUP>A/cm<SUP>2</SUP> while biased from 0 to 90V. To investigate the potential of the polyimide with fluorine groups as a gate insulator, we fabricated C<SUB>10</SUB>-BTBT TFTs. The field-effect mobility and the on/off current ratio of the TFTs were measured to be 0.76+/-0.09cm<SUP>2</SUP>/Vs and >10<SUP>6</SUP>, respectively.
Ka-Hee Moon,Soon-Kwon Kim,Ji-Young Yoon,Don-Ho Gang,Win Win Nwe,Chang-Suk Huh 한국작물학회 2010 한국작물학회 학술발표대회 논문집 Vol.2010 No.04
We studied on the diallel cross analysis of three different types of corn(Zea mays L.); supersweet(ss), sticky waxy and normal field corn in Korea and China. Four inbred lines each of three different types were crossed in a full diallel. Testing of 66 F1 crosses were made at two locations in Korea and China, respectively, in 2009. The objectives of the experiment was first to study different levels of heterosis among three types. In Korea, average ear length of 16 F1 crosses was the longest in N x wx (197mm), followed by wx x ss (193mm) and N x ss (191mm). Average of ss, wx and N were 135mm, 171 mm and 155mm. The relatively high level of N might be location specific breeding results, where the testing was done at the center of waxy corn breeding. Trends of three F1 crosses in China were similar with normal and supersweet corn. The result of this study has supported for breeding of high quality sticky-supersweet and high yield potential of normal -supersweet corn hybrids in the developing world to provide nutrition, sugar and other minerals such as Vitamin A and anthocyanin, simultaneously as a high quality food.