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MEH-PPV의 농도에 따른 황색 고분자 유기발광다이오드의 제작과 특성평가
전창덕(Jeon, Chang-Duk),신상배(Shin, Sang-Baie),공수철(Gong Su-cheol),박형호(Park, Hyung-Ho),전형탁(Jeon, Hyeong-Tag),장호정(Chang Ho Jung) 한국산학기술학회 2008 한국산학기술학회 학술대회 Vol.- No.-
본 연구에서는 ITO/PEDOT:PSS//PFO:MEH-PPV/LiF/Al 구조를 갖는 고분자 유기발광다이오드를 제작하여 발광 도펀트인 MEH-PPV의 농도에 따른 황색 PLED 소자의 전기·광학적 특성에 대하여 조사하였다. MEH-PPV의 농도를 각각 6, 7, 8, 9, 10 wt% 로 변화시켜 소자를 평가한 결과 9 wt%의 농도에서 가장 우수한 전기 및 광학적 특성을 보였으며, 16 V의 인가전압에서 약 630 cd/m2의 휘도 특성과 256 mA/cm2의 전류밀도 특성이 관찰되었다. 또한 10 wt%의 소자에서는 오히려 낮은 광학적 특성이 관찰되어 9 wt%에서 도펀트의 농도가 포화됨이 관찰되었고, 제작된 소자의 색좌표 (CIE coordiante)는 모든 소자에서 (x ,y = 0,49, 0.49)로 거의 동일하게 나타났다.
Park, Hyeong Ho,Park, Hyung Ho,Chang, Ho Jung,Jeon, Hyeong Tag Trans Tech Publications, Ltd. 2007 Materials science forum Vol.544 No.-
<P>The ferroelectric properties of UV irradiated and non-irradiated SBT thin films using photosensitive starting precursors were investigated. The observation of surface microstructure showed that UV irradiation and increase in anneal temperature induced the grain growth of SBT. The measured remnant polarization values of UV irradiated and non-irradiated SBT films after anneal at 700oC were 5.8 and 4.7 )C/cm2 and after anneal at 750oC, the values were 10.8 and 9.3 )C/cm2, respectively.</P>
ITO/glass 기판위에 제작된 Cross linked PVA 유기 게이트 절연막의 전기적 특성
최진은,공수철,전형탁,박형호,장호정,Choi, Jin-Eun,Gong, Su-Cheol,Jeon, Hyeong-Tag,Park, Hyung-Ho,Chang, Ho-Jung 한국반도체디스플레이기술학회 2010 반도체디스플레이기술학회지 Vol.9 No.4
The PVA (poly-vinyl alcohol) insulators were spun coated onto ITO coated glass substrates with the capacitors of Glass/ITO/PVA/Al structure. The effects of PVA concentrations (3.0, 4.0 and 5.0 wt%) on the morphology and electrical properties of the films were investigated. As the concentration of PVA increased from 3.0 to 5.0 wt%, the leakage current of device decreased from 17.1 to 0.23 pA. From the AFM measurement, the RMS value decreased with increasing PVA concentration, showing the improvement of insulator film roughness. The capacitances of the films with PVA concentrations of 4.0 and 5.0 wt% were about 28.1 and 24.2 nF, respectively. The lowest leakage current of 1.77 PA was obtained at the film thickness of 117.5 nm for the device with fixed PVA concentration of 5.0 wt%.
Kuk, Seoung Woo,Bang, Seok Hwan,Kim, In Hoe,Jeon, Sun Yeol,Jeon, Hyeong Tag,Park, Hyung Ho,Chang, Ho Jung Trans Tech Publications, Ltd. 2007 Materials science forum Vol.544 No.-
<P>ZnS thin films were grown by Atomic Layer Deposition (ALD) method with Diethyl- Zinc (DEZ) and hydrogen sulfide (H2S) for the application of a channel layer of OITFT (Organic-Inorganic Thin-Film Transistor). ZnS has many advantages such as high channel mobility, high deposition rate, transparency at room temperature due to the broad band gap (bandgap of ZnS : 3.7 eV), nontoxic characteristic, low resistivity, and less sensitive about oxidation than ZnO. The deposition rate of the ZnS films in our system was about 1.6 Å/cycle. ZnS film was characterized by AES, XRD, Hall-effect measurement.</P>
PFO:MEH-PPV를 이용한 White PLED의 제작과 특성평가
신상배,공수철,박형호,전형탁,장호정,Shin, Sang-Baie,Gong, Su-Choel,Park, Hyung-Ho,Jeon, Hyeong-Tag,Chang, Ho-Jung 한국마이크로전자및패키징학회 2008 마이크로전자 및 패키징학회지 Vol.15 No.4
본 연구에서는 백색 고분자유기 발광다이오드를 제작하여 전기 광학적 특성을 평가하였다. ITO(indium tin oxide)를 양극으로 사용하고 정공수송층으로 PEDOT:PSS [poly(3,4-ethylenedioxythiophene):poly(styrene sulfolnate)]를 발광물질로는 PFO [poly(9,9-dioctylfluorene)]와 MEH-PPV [poly(2-methoxy-5(2-ethylhexoxy)-1,4-phenyl-enevinyle)]를 각각 host와 dopant로 사용하였다. 전자주입층으로 LiF(lithium flouride)와 음극으로 Al(aluminum)을 증착하여 최종적으로 ITO/PEDOT:PSS/PFO:MEH-PPV/LiF/Al 구조를 갖는 백색 고분자 유기발광다이오드를 제작하고 PFO와 MEH-PPV의 농도에 따른 전기 광학적 특성 변화를 조사하였다. 제작된 소자는 9V에서(x=0.36, y=0.35)의 CIE 색좌표를 갖는 백색 발광이 관찰되었으며, 최대 전류밀도와 휘도는 약 13V의 인가전압에서 $740mA/cm^2,\;900cd/m^2$의 값을 나타내었으며, $200cd/m^2$ 휘도에서 0.37 cd/A의 최대 전류효율이 관찰되었다. In this paper, white polymer light emitting diodes(WPLEDs) were fabricated and investigated the electrical and optical properties for the prepared devices. ITO(indium tin oxide) and PEDOT:PSS [poly(3,4-ethylenedioxythiophene):poly(styrene sulfolnate)] as anode and hole injection materials, PFO [poly(9,9-dioctylfluorene)] and MEH-PPV [poly(2-methoxy-5(2-ethylhe xoxy)-1,4-phenylenevinyle)] were used as the light emitting host and guest materials, respectively. The LiF(lithium flouride) and Al(aluminum) were used electron injection materials and cathode materials. Finally, the WPLED with structure of ITO/PEDOT:PSS/PFO:MEH-PPV/LiF/Al was fabricated. The prepared WPLED showed white emission with CIE coordinates of (x=0.36, y=0.35) at the applied voltage of 9V. The maximum current density and luminance were about $740mA/cm^2\;and\;900cd/m^2$ at 13V, respectively. And the maximum current efficiency was 0.37 cd/A at $200cd/m^2$ in luminance.
Gong, Su-Cheol,Ryu, Sang-Ouk,Bang, Seok-Hwan,Jung, Woo-Ho,Jeon, Hyeong-Tag,Kim, Hyun-Chul,Choi, Young-Jun,Park, Hyung-Ho,Chang, Ho-Jung The Korean Microelectronics and Packaging Society 2009 마이크로전자 및 패키징학회지 Vol.16 No.4
Two different organic-inorganic hybrid thin film transistors (OITFTs) with the structures of glass/ITO/ZnO/PMMA/Al (staggered structure) and glass/ITO/PMMA/ZnO/Al (inverted staggered structure), were fabricated and their electrical and structural properties were compared. The ZnO thin films used as active channel layers were deposited by the atomic layer deposition (ALD) method at a temperature of $100^{\circ}C$. To investigate the effect of the substrates on their properties, the ZnO films were deposited on bare glass, PMMA/glass and ITO/glass substrates and their crystal properties and surface morphologies were analyzed. The structural properties of the ZnO films varied with the substrate conditions. The ZnO film deposited on the ITO/glass substrate showed better crystallinity and morphologies, such as a higher preferred c-axis orientation, lower FWHM value and larger particle size compared with the one deposited on the PMMA/glass substrate. The field effect mobility ($\mu$), threshold voltage ($V_T$) and $I_{on/off}$ switching ratio for the OITFT with the staggered structure were about $0.61\;cm^2/V{\cdot}s$, 5.5 V and $10^2$, whereas those of the OITFT with the inverted staggered structure were found to be $0.31\;cm^2/V{\cdot}s$, 6.8 V and 10, respectively. The improved electrical properties for the staggered OITFTs may originate from the improved crystal properties and larger particle size of the ZnO active layer.
Gong, Su-Cheol,Shin, Ik-Sup,Bang, Suk-Hwan,Kim, Hyun-Chul,Ryu, Sang-Ouk,Jeon, Hyeong-Tag,Park, Hyung-Ho,Yu, Chong-Hee,Chang, Ho-Jung The Korean Microelectronics and Packaging Society 2009 마이크로전자 및 패키징학회지 Vol.16 No.2
The organic-inorganic thin film transistors (OITFTs) with ZnO channel layer and the cross-linked PVP (Poly-4-vinylphenol) gate insulator were fabricated on the patterned ITO gate/glass substrate. ZnO channel layer was deposited by using atomic layer deposition (ALD). In order to improve the electrical properties, $O_2$ plasma treatment onto PVP film was introduced and investigated the effect of the plasma treatments on the electrical properties of the OITFTs. The field effect mobility and sub-threshold slope (SS) values of the OITFT decreased slightly from 0.24 to 0.16 $cm^2/V{\cdot}s$ and from 9.7 to 9.2 V/dec, respectively with increasing RF power from 30 to 50 Watt. The $I_{on/off}$ ratio was about $10^3$ for all samples with $O_2$ plasma treatment.
PFO : MEH-PPV 발광층과 정공 차단층을 이용한 고분자 발광다이오드의 특성
이학민,공수철,신상배,박형호,전형탁,장호정,Lee, Hak-Min,Gong, Su-Cheol,Shin, Sang-Bae,Park, Hyung-Ho,Jeon, Hyeong-Tag,Chang, Ho-Jung 한국반도체디스플레이기술학회 2008 반도체디스플레이기술학회지 Vol.7 No.2
The yellow base polymer light emitting diodes(PLEDs) with double emission and hole blocking layers were prepared to improve the light efficiency. ITO(indium tin oxide) and PEDOT : PSS[poly(3,4-ethylenedioxythiophene) : poly(styrene sulfolnate)] were used as cathode and hole transport materials. The PFO[poly(9,9-dioctylfluorene)] and MEH-PPV[poly(2-methoxy-5(2-ethylhe xoxy)-1,4-phenylenevinyle)] were used as the light emitting host and guest materials, respectively. TPBI[Tpbi1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene] was used as hole blocking layer. To investigate the optimization of device structure, we prepared four kinds of PLED devices with different structures such as single emission layer(PFO : MEH-PPV), two double emission layer(PFO/PFO : MEH-PPV, PFO : MEH-PPV/PFO) and double emission layer with hole blocking layer(PFO/PFO : MEH-PPV/TPBI). The electrical and optical properties of prepared devices were compared. The prepared PLED showed yellow emission color with CIE color coordinates of x = 0.48, y = 0.48 at the applied voltage of 14V. The maximum luminance and current density were found to be about 3920 cd/$m^2$ and 130 mA/$cm^2$ at 14V, respectively for the PLED device with the structure of ITO/PEDOT : PSS/PFO/PFO : MEH-PPV/TPBI/LiF/Al.
Field Effect Transistor with ZnS Active Layer on ITO/Glass Substrate
Back, In Jae,Gong, Su Cheol,Lim, Hun Seoung,Shin, Ik Sub,Kuk, Seoung Woo,Kim, In Hoe,Jeon, Hyeong Tag,Park, Hyung Ho,Chang, Ho Jung Trans Tech Publications, Ltd. 2007 Materials science forum Vol.544 No.-
<P>The organic-inorganic field effect transistors (OIFETs) with ZnS active layer were fabricated on the ITO/glass substrate using cross-linked PVP (poly-4-vinylphenol) as a gate insulator. ZnS semiconductor films were prepared by the atomic layer deposition method. In the case of cross-linked PVP film, the leakage current and capacitance were about 1× 10-8 A and 12 nF/cm2, showing good gate insulation property. The carrier concentration and mobility of ZnS film deposited on SiO2/Si wafer was found to be -9.4×1015 cm-3 and 49.0 cm2/ V·sec, respectively. For the OIFET devices with ITO/PVP/ZnS/Ti:Au structure, the carrier mobility was about 1.9 cm2/V·sec. From the AFM images, lower mobility in the OIFET device compared with ZnS film on SiO2/Si substrate may be attributed to a rough surface morphology of ZnS film.</P>
유기박막트랜지스터 적용을 위한 Soluble Pentacene 박막의 특성연구
공수철,임현승,신익섭,박형호,전형탁,장영철,장호정,Gong, Su-Cheol,Lim, Hun-Seong,Shin, Ik-Sub,Park, Hyung-Ho,Jeon, Hyeong-Tag,Chang, Young-Chul,Chang, Ho-Jung 한국마이크로전자및패키징학회 2007 마이크로전자 및 패키징학회지 Vol.14 No.3
본 연구에서는 유기박막트랜지스터(OTFT, Organic Thin film Transistor)에 응용을 위해 용액(soluble) 공정을 통하여 제작된 pentacene 박막의 특성을 분석하여 pentacene 박막의 OTFT 소자에 적용 가능성을 조사하였다. Pentacene을 용해시키기 위해 toluene과 chloroform의 두 종류의 용제를 사용하였으며, 이들 용제가 pentacene 박막의 특성에 미치는 영향을 연구하였다. Pentacene 용액은 ITO/Glass 기판위에 spin-coating 법으로 유기 반도체 박막을 제작하여 각 박막의 표면형상, 결정화 특성과 전기적 특성을 조사하였다. AFM을 이용한 표면 형상 관찰 결과 chloroform을 이용한 pentacene 박막이 toluene을 이용한 박막에 비하여 표면 거칠기가 개선되는 경향을 보여주었다. XRD 회절 분석 결과 모든 pentacene 박막 시료에서 결정화가 되지 않은 비정질 형태를 보여주었다. Hall effect measurement 분석 결과 chloroform 용제를 이용한 pentacene 박막이 toluene용제를 사용한 시료에 비해 보다 우수한 전기적 특성을 나타내었다. 즉, chloroform에 용해된 pentacene 박막의 경우 전하농도와 이동도는 $-3.225{\times}10^{14}\;cm^{-3}$와 $3.5{\times}10^{-1}\;cm^2\;V^{-1}{\cdot}S^{-1}$를 각각 나타내었다. 또한 비저항은 약 $2.5{\times}10^2\;{\Omega}{\cdot}cm$를 얻었다. In this study, the pentacene thin films were prepared by the soluble process, and characterized fur the application of the organic thin film transistor(OTFT) device. To dissolve the pentacene material, two kinds of solvents such as toluene and chloroform were used, and the effects of these solvents on the properties of pentacene thin films coated on ITO/Glass substrate were investigated. Pentacene thin films were prepared by using spin-coating methode and characterized the surface morphology, crystalline and electrical properties. From the AFM measurement, the surface morphology of the pentacene film dissolved with chloroform was improved compared with the one dissolved with toluene solvent. XRD measurement showed that all prepared pentacene film samples were amorphous crystal phases without crystallization of the films. The electrical properties of the pentacene film dissolved with chloroform showed better results than the ones using toluene solvent by hall measurement system. The carrier concentration and the mobility values of pentacene films using chloroform solvent were found to be $-3.225{\times}10^{14}\;cm^{-3}$ and $3.5{\times}10^{-1}\;cm^2{\cdot}V^{-1}{\cdot}S^[-1}$, respectively. The resistivity was about $2.5{\times}10^2\;{\Omega}{\cdot}cm$.