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DIFFUSE [CII] 158 MICRON LINE EMISSION FROM THE INTERSTELLAR MATTER AT HIGH GALACTIC LATITUDE
MATSUHARA H.,TANAKA M.,KAWADA M.,MAKIUTI S.,MATSUMOTO T.,NAKAGAWA T.,OKUDA H.,SHIBAI H.,HIROMOTO N.,OKUMURA K.,LANGE A. E.,BOCK J. J. The Korean Astronomical Society 1996 Journal of The Korean Astronomical Society Vol.29 No.suppl1
We present the results of an rocket-borne observation of far-infrared [CII] line at 157.7 ${\mu}m$ from the diffuse inter-stellar medium in the Ursa Major. We also introduce a part of results on the [CII] emission recently obtained by the IRTS, a liquid-helium cooled 15cm telescope onboard the Space Flyer Unit. From the rocket-borne observation we obtained the cooling rate of the diffuse HI gas due to the [CII] line emission, which is $1.3{\pm}0.2 {\times} 10^{-26}$ $ergss^{-1} H^{-1}_{atom}$. We also observed appreciable [CII] emission from the molecular clouds, with average CII/CO intensity ratio of 420. The IRTS observation provided the [CII] line emission distribution over large area of the sky along great circles crossing the Galactic plane at I = $50^{\circ}$ and I = $230^{\circ}$. We found two components in their intensity distributions, one concentrates on the Galactic plane and the another extends over at least $20^{\circ}$ in Galactic latitude. We ascribe one component to the emission from the Galactic disk, and the another one to the emission from the local interstellar gas. The [CII] cooling rate of the latter component is $5.6 {\pm} 2.2 {\times}10$.
Cross section data sets for electron collisions with H2, O2, CO, CO2, N2O and H2O
Anzai, K.,Kato, H.,Hoshino, M.,Tanaka, H.,Itikawa, Y.,Campbell, L.,Brunger, M. J.,Buckman, S. J.,Cho, H.,Blanco, F.,Garcia, G.,Limã,o-Vieira, P.,Ingó,lfsson, O. Springer-Verlag 2012 European Physical Journal D Vol.66 No.2
The Role of (111)MgO Underlayer in Growth of c-axis Oriented Barium Ferrite Films
D. W. Erickson,Y. K. Hong,S. H. Gee,T. Tanaka,M. H. Park,I. T. Nam 한국자기학회 2004 Journal of Magnetics Vol.9 No.4
Hexagonal barium-ferrite (BaFe₁₂O_(19), magnetoplumbite structure; BaM) film with perpendicularly c-axis orientation was successfully deposited on (100) silicon substrates with an MgO (111) underlayer by rf diode sputtering and in-situ heating at 920 ℃. The magnetic and structural properties of 0.27 ㎛ thick BaM films on MgO (111) underlayers were compared to films of the same thickness deposited onto single-crystal MgO (111) and c-plane (000ι) sapphire (Al₂O₃) substrates by vibrating sample magnetometry (VSM), x-ray diffractometer (XRD), and atomic force microscopy (AFM). The thickness dependence of MgO (111) underlayers on silicon wafer was found to have a large effect on both magnetic and structural properties of the BaM film. The thickness of 15 ㎚ MgO (111) underlayers produced BaM films with almost identical magnetic and structural properties as the single-crystal substrates; this can be explained by the lower surface roughness for thinner underlayer thicknesses. The magnetization saturation (Ms) and the ratio H_(c∥)/H_(c⊥) for the BaM film with a 15 ㎚ MgO (111) underlayer is 217 emu/cc and 0.24, respectively. This is similar to the results for the BaM films deposited on the single-crystal MgO (111) and sapphire substrates of 197 emu/cc and 0.10, 200 emu/cc and 0.12, respectively. Therefore, the proposed MgO (111) underlayer can be used in many applications to promote c-axis orientation without the cost of expensive substrates.
Can we substitute the intuition of an experienced bridge inspector by monitoring?
Helmut Wenzel,Hiroshi Tanaka,Michaela Höllrigl-Binder,Helga Allmer 국제구조공학회 2015 Smart Structures and Systems, An International Jou Vol.15 No.3
Damage quantification is a major goal of the SHM community. Methodologies to introduce aquantity for actual condition of a structure into the assessment process are desired. The idea that thecondition of a structure is represented in the character of its dynamic response is fully accepted by the SHMcommunity. The VCLIFE methodology quantifies condition analyzing input from monitoring.
Tanaka, K.,Nagaoka, K.,Murakami, S.,Takahashi, H.,Osakabe, M.,Yokoyama, M.,Seki, R.,Michael, C.A.,Yamaguchi, H.,Suzuki, C.,Shimizu, A.,Tokuzawa, T.,Yoshinuma, M.,Akiyama, T.,Ida, K.,Yamada, I.,Yasuhar IOP 2017 Nuclear fusion Vol.57 No.11
<P>Surveys of the ion and electron heat transports of neutral beam (NB) heating plasma were carried out by power balance analysis in He and H rich plasma at LHD. Collisionality was scanned by changing density and heating power. The characteristics of the transport vary depending on collisionality. In low collisionality, with low density and high heating power, an ion internal transport barrier (ITB) was formed. The ion heat conductivity (<I>χ</I> <SUB>i</SUB>) is lower than electron heat conductivity (<I>χ</I> <SUB>e</SUB>) in the core region at <I>ρ</I> < 0.7. On the other hand, in high collisionality, with high density and low heating power, <I>χ</I> <SUB>i</SUB> is higher than <I>χ</I> <SUB>e</SUB> across the entire range of plasma. These different confinement regimes are associated with different fluctuation characteristics. In ion ITB, fluctuation has a peak at <I>ρ</I> = 0.7, and in normal confinement, fluctuation has a peak at <I>ρ</I> = 1.0. The two confinement modes change gradually depending on the collisionality. Scans of concentration ratio between He and H were also performed. The ion confinement improvements were investigated using gyro-Bohm normalization, taking account of the effective mass and charge. The concentration ratio affected the normalized <I>χ</I> <SUB>i</SUB> only in the edge region (<I>ρ</I> ~ 1.0). This indicates ion species effects vary depending on collisionality. Turbulence was modulated by the fast ion loss instability. The modulation of turbulence is higher in H rich than in He rich plasma.</P>
H.Tanaka,H Sadakata,H.Muraoka,A.Okuno,E.Hiraki,M.Nakaoka 전력전자학회 2001 ICPE(ISPE)논문집 Vol.2001 No.10
This paper presents an innovative prototype of a new conceptual electromagnetic induction heated type far infrared rays radiant heating appliance using the voltage-fed edge-resonant ZVS-PWM high frequency inverter using IGBTs for food cooking and processing which operates under a constant frequency variable power regulation scheme This power electronic appliance with soft switching high frequency inverter using IGBTs has attracted special interest from some advantageous viewpoints of safety, cleanliness, compactness and rapid temperature response, which is more suitable for consumer power electronics applications.<br/>