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자석식 파이프 절단기의 등판각 판별을 위한 실시간 비선형 에스터메이터의 설계
김국환,이순걸,김문상 경희대학교 산학협력기술연구원 2002 산학협력기술연구논문집 Vol.8 No.-
During pipe cutting process, the gravity acting on the pipe-cutting machine widely varies. That is, the cutting machine gets fast when moving from the top to the bottom of the pipe and slow when moving from the bottom to the top. Actually the system is kind of a non-linear system where the gravity is function of climbing angle of the cutting machine along the pipe. Expecially jerking motion is critical. Therefore, authors design the non-linear estimator that estimates the current position of the machine along the pipe and that compensates the effect of gravity in this paper. It receives the feed-back signal from encoder connected with the motor. To show the control performance of the designed algorithm, experiments with general velocity profiles are tested.
임정환,오봉렬,나국주,김현수,윤한덕,허 탁,조석주,민용일 大韓應急醫學會 1996 대한응급의학회지 Vol.7 No.1
The evaluation of patients with microscopic hematuria after blunt abdominal trauma has become controversial. We tested the hypothesis that renal contusion can be diagnosed clinically and that these patients do not require radiographic evaluation. To evaluate the association of microscopic hematuria without shock and with renal injury, we reviewed the medical records of 252 patients following blunt abdominal trauma. Microscopic hematuria without shock was noted in 58 of 252 patients. Of the 58 patients 52 had renal contusion, 4 had renal laceration, 1 had a renal rupture and 1 had renal pedicle injury. All of the patients with renal contusions experienced no complications from nonoperative management. But, avoiding a radiopraphic evaluation in patients with blunt renal trauma plus microscopic hematuria and no shock would miss a few cases of severe renal injury.
Analysis of current drift on p-channel pH-Sensitive SiNW ISFET by capacitance measurement
Kim, Sihyun,Kwon, Dae Woong,Kim, Sangwan,Lee, Ryoongbin,Kim, Tae-Hyeon,Mo, Hyun-Sun,Kim, Dae Hwan,Park, Byung-Gook ELSEVIER 2018 Current Applied Physics Vol.18 No.supp
<P>The mechanism of drift effect in pH-sensitive silicon nanowire (SiNW) ion sensitive field effect transistor (ISFET) is comprehensively studied by measuring the time-dependent drain current (I-D) and the gate capacitance (C-G) under different liquid-gate biases (V(LG)s) and pH levels. It was revealed that the origin of the current drift can be divided into three different mechanisms; the bulk ionic diffusion in sensing insulator, the chemical modification of insulator surface, and the oxide etch process induced by hydroxide (OH-) ion. Based on the V-LG/pH dependency of current drift and the transient C-G variation, it is clearly recognized that the drift of n-type SiNW (n-SiNW) ISFET results from H+ thorn diffusion in the insulator, whereas that of p-type SiNW (p-SiNW) ISFET is caused by temporal chemical modification (hydration) of the insulator, along with the oxide thickness (t(ox)) reduction by OH- ions. (C) 2017 Elsevier B.V. All rights reserved.</P>
Kim, Seohyeon,Kim, Jungmok,Jang, Jungkyu,Mo, Hyun-Sun,Kim, Dong Myong,Choi, Sung-Jin,Park, Byung-Gook,Kim, Dae Hwan,Park, Jisun American Scientific Publishers 2017 Journal of Nanoscience and Nanotechnology Vol.17 No.5
<P>Silicon nanowire ion-sensitive field-effect transistor (SiNW ISFET) is widely used for the label-free detection and real-time analysis in chemical and biological experiments. However, hysteresis and dynamic transfer characteristic related to time dependence are main drawbacks of SiNW ISFET. By changing hold time (T-H), delay time (T-D), and pH level under aqueous environment, we explained mechanism of hysteresis and dynamic transfer characteristic through analyzing the electrical characteristics. We believe that the results found in this study are able to minimize the effects caused by hysteresis, which contributes to advanced biosensing experiment in the future.</P>
Kim, Yong Kyun,Lee, Dong-Hwan,Jeon, Jaehyun,Jang, Hang-Jea,Kim, Hyeon-Kuk,Jin, Kyubok,Lim, Sung-Nam,Lee, Sung Sook,Park, Bong Soo,Kim, Yang Wook,Shin, Jae-Gook,Kiem, Sungmin Elsevier 2018 Clinical therapeutics Vol.40 No.8
<P><B>Abstract</B></P> <P><B>Purpose</B></P> <P>The aim of this study was to investigate the population pharmacokinetic (PK) profile of meropenem in Korean patients with acute infections.</P> <P><B>Methods</B></P> <P>The study included 37 patients with a creatinine clearance ≤50 or >50 mL/min who received a 500- or 1000-mg dose of meropenem, respectively, infused intravenously over 1 hour every 8 hours. Blood samples were collected before and at 1, 1.5, and 5 hours after the start of the fourth infusion. The population PK analysis was conducted by using nonlinear mixed effect modeling software (NONMEM). Monte-Carlo simulations were performed to identify optimal dosing regimens.</P> <P><B>Findings</B></P> <P>Thirty-seven subjects completed the study. Meropenem PK variables were well described by using a one-compartment model. The typical values (relative SE) for weight-normalized clearance (CL) and V<SUB>d</SUB> were 0.266 L/h/kg (12.29%) and 0.489 L/kg (11.01%), respectively. Meropenem CL was significantly influenced by the serum creatinine level, which explained 11% of the interindividual CK variability. The proposed equation to estimate meropenem CL in Korean patients was as follows: CL (L/h) = 0.266 × weight × [serum creatinine/0.74]<SUP>–1.017</SUP> <SUB>.</SUB> The simulation results indicate that the current meropenem dosing regimen may be suboptimal in patients infected with normal or augmented renal function.</P> <P><B>Implications</B></P> <P>Prolonged infusions of meropenem over at least 2 hours should be considered, especially in patients with augmented renal function and those infected with pathogens for which the minimum inhibitory meropenem concentration is >1 μg/mL. Our results suggest an individualized meropenem dosing regimen for patients with abnormal renal function and those infected with pathogens with decreased in vitro susceptibility.</P>
Arch NAND Flash Memory Array With Improved Virtual Source/Drain Performance
Kim, Wandong,Lee, Jung Hoon,Yun, Jang-Gn,Cho, Seongjae,Li, Dong-Hua,Kim, Yoon,Kim, Doo-Hyun,Lee, Gil Sung,Park, Se-Hwan,Shim, Won Bo,Lee, Jong-Ho,Shin, Hyungcheol,Park, Byung-Gook IEEE 2010 IEEE electron device letters Vol.31 No.12
<P>In this letter, a novel SONOS NAND Flash memory array featuring arch-shaped silicon fin and extended word lines (WL) is proposed to improve virtual source/drain (VSD) performance. The arch shape concentrates electric field, resulting in higher electron concentration at the VSD region and higher on -state cell current. In addition, the extended WL process improves the short-channel-effect (SCE) immunity and <TEX>$I$</TEX>–<TEX>$V$ </TEX> characteristics. To verify these, an arch VSD NAND array device was fabricated and characterized. The integrated device shows very small SCE while obtaining high on-state cell current. Program and disturbance characteristics of the device are also confirmed.</P>
Program/Erase Model of Nitride-Based NAND-Type Charge Trap Flash Memories
Kim, Doo-Hyun,Cho, Seongjae,Li, Dong Hua,Yun, Jang-Gn,Lee, Jung Hoon,Lee, Gil Sung,Kim, Yoon,Shim, Won Bo,Park, Se Hwan,Kim, Wandong,Shin, Hyungcheol,Park, Byung-Gook IOP Publishing 2010 Japanese journal of applied physics Vol.49 No.r8