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Single-Material Bragg Reflectors and Their Applications in VCSELs
최희주,주건우,송영민,이용탁 한국물리학회 2018 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.72 No.2
We present single-material distributed Bragg reflectors (DBRs) fabricated by oblique-angle deposition of amorphous silicon (a-Si). The high and low refractive indices of a-Si films were obtained at two incident vapour flux angles (θα) of 0° and 80° by determining the quarter-wavelength thicknesses of 67 nm at 0° and 128 nm at 80°. The fabricated single-material Bragg reflectors with only five pairs provide high reflectivity values of over 95%. The proposed DBRs were applied to intra-cavity contacted vertical-cavity surface-emitting lasers (VCSELs) to reduce fabrication costs and step. For the fabricated five pair a-Si/a-Si DBRs on VCSELs, the normalized stop bandwidth of 31.63% was measured while high reflectivity values over 95% were maintained over a wide wavelength range of 710 - 1020 nm. The fabricated VCSELs with Da = 7 μm obtained output power and threshold current, which are reasonable measured results.
Kwangwook Park,Sooraj Ravindran,주건우,Jung-Wook Min,Seokjin Kang,명노성,Sang-Youp Yim,조용륜,김봉중,Yong-Tak Lee 한국물리학회 2016 Current Applied Physics Vol.16 No.12
GaAs/GaInAs multiple-quantum-well (MQW) shells having different GaInAs shell width formed on the surface of self-catalyzed GaAs core nanowires (NWs) are grown on (100) Si substrate using molecular beam epitaxy. The photoluminescence emission from GaAs/GaInAs MQW shells and the carrier lifetime could be varied by changing the width of GaInAs shell. Time-resolved photoluminescence measurements showed that the carrier lifetime had a fast and slow decay owing to the mixing of wurtzite and zincblende structures of the NWs. Furthermore, strain relaxation caused the carrier lifetime to decrease beyond a certain thickness of GaInAs quantum well shells.