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실리콘과 코발트 박막의 계면구조에서 발생하는 l/f 잡음현상 연구
조남인(Nam-Ihn Cho),남형진(Hyoung Gin Nam),박종윤(J. Y. Park) 한국진공학회(ASCT) 1996 Applied Science and Convergence Technology Vol.5 No.1
실리콘 모재 위에 증착된 코발트 박막의 l/f 잡음 발생 메카니즘을 미시적 관점에서 살펴보았다. 코발트 박막은 p형 (100) 실리콘 위에 고진공에서 전자빔 증착기술에 의해 준비되었으며, 코발트 박막에 대한 표면저항 측정 및 전자회절 패턴 관찰과 더불어 l/f잡음전력 스펙트럼밀도를 액체질소 온도에서 측정하였다. 측정된 잡음전력 스펙트럼 밀도는 계면박막의 구조적인 전환 영역과 금속성 성질로의 전환 영역에서 가장 큰 값을 나타냈으며, 다결정의 코발트 실리사이드가 핵생성된 후 잡음밀도의 크기는 10^(-4)배 이하로 급격히 감소하였다. 이 잡음변수는 계면박막의 구조적 불안정성을 나타냄을 알 수 있었다. We present a microscopic description for generation of l/f noise in interfaces between cobalt thin film and silicon substrate. Along with surface resistance measurements and transmission electron diffraction observations, l/f noise power spectral density has been measured for the interfacial structures at the liquid nitrogen temperature. The cobalt films have been deposited by the electron-beam evaporation technique onto p-type (100) silicon in the high vacuum condition. The measured noise power spectral density shows highest magnitude near the structural transition and metallization transition region. The noise magnitude rapidly decreased after the cobalt silicide nucleation. The noise parameter is concluded to be originated from the structural fluctuations.
증착조건에 따른 undoped ZnO 박막의 특성 변화
남형진,이규항,조남인,Nam, Hyoung-Gin,Lee, Kyu-Hwang,Cho, Nam-Ihn 한국반도체디스플레이기술학회 2008 반도체디스플레이기술학회지 Vol.7 No.3
In this study, we investigated variations in undoped ZnO thin film properties with working pressure, $O_2$/Ar ratio, and annealing ambient. Higher vacuum pressure during deposition was observed to bring about slower growth rate resulting in samples with better crystallinity as well as hole generation efficiency through formation of shallower oxygen interstitial. Given that $O_2$/Ar ratio is greater than unity, O provided from the ambient to ZnO during annealing was found to preferably situate at interstitial sites. When He was used for the second annealing, significant changes were not observed. On the other hand, O ambient caused increased density of oxygen interstitial, thereby making the film more intrinsic-like high resistivity ZnO.
청색 유기발광층 두께에 따른 2-파장 방식의 백색 유기발광 소자의 광학적 특성
박찬준(Chan-Jun Park),조남인(Nam-Ihn Cho),송영욱(Young-Wook Song) 제어로봇시스템학회 2008 제어·로봇·시스템학회 논문지 Vol.14 No.6
2-wavelength type white OLEO devices have been made consisted of two layers; a layer with blue light emitting DPVBi host and other EML layer with yellow emitting rubrene dopant. New method to get white emitting device has been suggested by varying thicknesses of the DPVBi layer. The ITO/2-TNATA(150A)/NPB(350A)/DPVBi(35A)/DPVBi:rubrene (2wt%,200A)/DPVBi(100A)/Alq3(50A)/LiF(5A)/Al(1000A) structure has showed optimum results in CIE coordinates of (0.3233, 0.33). OLED devices with this structure has properties of 1.2d/㎡ at turn-on voltage of 3.9V and 1037cd/㎡ at 7.9V. This structure has advantages of simple fabrication and easy to emit the white color.
ZnO의 입도와 산소압이 고온연소합성법으로 제조된 Ni - Zn Ferrite 분말의 자기적 특성에 미치는 영향
최용(Yong Choi),조남인(Nam Ihn Cho),한유동(Y. D. Hahn) 한국자기학회 1999 韓國磁氣學會誌 Vol.9 No.2
(Ni, Zn)Fe₂O₄ powders were prepared through self-propagating high temperature synthesis reaction and the effects of initial zinc oxide powder size and oxygen pressure on the magnetic properties of the final combustion products were studied. The ferrite powders were combustion synthesized with iron, iron oxide, nickel oxide, and zinc oxide powders under various oxygen pressures of 0.5~10 atmosphere after blended in n-hexane solution for 5 minutes with a spex mill, followed by dried at 120 ℃ in vacuum for 24 hours. The maximum combustion temperature and propagating rate were about 1250 ℃ and 9.8 ㎜/sec under the tap density, which were decreased with decreasing ZnO size and oxygen pressure. The final product had porous microstructure with spinel peaks in X-ray spectra. As the ZnO particle size in the reactant powders and oxygen pressure during the combustion reaction increase, coercive force, maximum magnetization, residual magnetization, squareness ratio were changed from 13.24 Oe, 43.88 emu/g, 1.27 emu/g, 0.0034 emu/gOe, 37.8 ℃ to 11.83 Oe, 68.87 emu/g, 1.23 emu/g, 0.00280 emu/gOe, 43.9 ℃ and 7.99 Oe, 75.84 emu/g, 0.791 emu/g, 0.001937 emu/gOe, 53.8 ℃, respectively. Considering the apparent activation energy changes with oxygen pressure, the combustion reaction significantly depended on initial oxygen pressure and ZnO particle size.
박동일(Dong Il Park),조남인(Nam-Ihn Cho) 한국진공학회(ASCT) 1997 Applied Science and Convergence Technology Vol.6 No.1
0.25 ㎛ 이하의 최소선폭을 갖는 초고집적회로에 사용할 수 있는 구리박막의 형성기술을 조사하였다. 본 실험에서는 측면박막 형성에 적합한 화학적 증착을 시도하였으며 (hfac)Cu(VTMS) (hexafluoroacetylacetonate vinyltrimethylsilane copper(Ⅰ))로 명명된 금속유기 화합물을 원료로 사용하였다. 구리박막의 형성은 TiN와 SiO₂ 모재 위에 이루어 졌으며, 형성 중에 모재의 온도와 증착용기 내 압력의 함수로서 집적회로 공정상 주요 변수인 박막의 비저항, 박막의 증착선택도를 측정하였다. 구리박막은 모재온도 180℃와 증착용기의 압력 0.6 Torr의 조건에서 가장 좋은 전기적 성질을 보여 주었다. 이 조건에서 형성된 구리박막은 다결정 구조를 나타내었으며 구리박막의 증착속도는 120 ㎚/min, 비저항은 2.5 μΩㆍ㎝, 평균 거칠기는 15.5 ㎚로서 0.25 ㎛ 이하 선폭의 집적회로에서 요구되는 전기적, 재료적 사양에 근접한 구리박막을 얻었다. 또한 140-250℃의 모재 온도 범위에서 TiN 모재와 SiO₂ 모재 사이에 뚜렷한 증착선택성이 관측되었다. We have investigated the formation techniques of copper thin films which would be useful for sub-quarter-micron integrated circuits. A chemical vapor deposition technology has been tried for the better side wall formation of the thin films, and a metal organic compound, named (hfac)Cu(VTMS) (hexafluoroacetylacetonate vinyltrimethylsilane copper(Ⅰ)) was used as the precursors. We have deposited the copper thin films on TiN and SiO₂ substrates. The film resistivity and deposition selectivity have been measured as functions of substrate temperature and chamber pressure. Best electrical properties were obtained at 180℃ of substrate temperature and 0.6 Torr of chamber pressure. Under the optimun deposition conditions, polycrystalline copper structures were observed to be grown, and the deposition rate of 120 ㎚/min was measured. The electrical resistivity as low as 2.5 μΩㆍ㎝, and the surface roughness of 15.5 ㎚ were also measured. These are the suitable electrical and material properties required in the sub-quarter-micron device fabrication. Also, in the substrate temperature range of 140-250℃, high deposition selectivity was observed between TiN and SiO₂.