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TMAH/IPA/Pyrazine 수용액에서의 전기화학적 식각정지법에 관한 연구
박진성,최영규,정귀상 경북대학교 센서기술연구소 1997 센서技術學術大會論文集 Vol.8 No.1
This paper presentee the characteristics of Si anisotropic etching and electrochemical etch-stop in aqueous TMAH/IPA/Pyrazine solution. (100) Si etching rate of 0.747 μm/min which faster 86 % than TMAH 25 wt.%/IPA 17 vol.% solution was obtained using best etching condition at TMAH 25 wt.%/IPA 17 vol.%/pyrazine 0.1 g and the etching rate of (100) Si was decreased with more additive quantity of pyrazine. I-V curve of p-type Si in TMAH/IPA/Pyrazine was obtained. OCP and PP were -2 V and -0.9 V, respectively. Si diaphragm was obtained by electrochemical etch-stop in aqueous TMAH/IPA/Pyrazine solution.
수용성 암모니아 용약에서의 단결성 실리콘의 선택적 식각특성
정귀상,박진성 東西大學校 1998 동서논문집 Vol.4 No.-
This paper presents Si anisotropic ethcing characteristics in TMAH/JPA solution with addition of pyrazine Addition of IPA to TMAH solution, etching characteristics that the flatness of etching front was improved and undercutting was reduced were exhibited, but the etching rate of (100) Si was decreased. (100) Si etching rate of 0.747 ㎛/min which faster 52 % than pure TMAH 25 wt.% solution was obtained using TMAH 25 wt.%/IPA 17 vol.%/pyrazine 0.1 g and the etching rate of (100) Si was decreased with more additive quantity of pyrazine. Addition of pyrazine to TMAH 25 wt.% solution, the flatness variations of etching front was not observed and undercutting ratio was reduced about 30 ~ 50 %.
전기화학적 식각정지법에 의한 고수율 압저항향 마이크로 압력센서의 제작
정귀상,박진성 東西大學校 1999 동서논문집 Vol.5 No.-
This paper presents the fabrication of high-yield piezoresistive micro pressure sensors by electrochemical etch-stop method in TMAH/IPA/pyrazine solution. Addition of pyrazine to TMAH etchants increases the etch rates of (100) Si, thus the elapsed time for etch-stop was shortened. I-V curves of n and p-type Si in TMAH/IPA/pyrazine solution were obtained. Diaphragms having 20 ㎛ thick were fabricated in 5-inch wafer. The thicknesses of diaphragms were measured and thickness variations were also checked. Piezoresistive pressure sensors using these diaphragms were fabricated by micromachining technology with a standard IC process. The diaphragm thickness is precisely controlled by electrochemical etch-stop method. The pressure sensitivity variation across a 5-inch Si wafer of 5% was obtained.
TMAH/IPA/Pyrazine 용액에서 전기화학적 식각정지법에 의해 제작된 압력센서의 특성
박진성,제우성,정귀상 경북대학교 센서기술연구소 1998 센서技術學術大會論文集 Vol.9 No.1
This paper presents the characteristics of pressure sensors fabricated by electrochemical etch-stop method in TMAH/IPA/pyrazine solution. Addition of pyrazine to TMAH etchants increases the etch rates of (100) Si, thus the elapsed time for etch-stop was shortened. I-V curves of n and p-type Si in TMAH/IPA/pyrazine solution were obtained. Diaphragms having 20 μm thick were fabricated in 5-inch wafer. The thicknesses of diaphragms were measured and thickness variations were also evaluated. Piezoresistive pressure sensors using these diaphragms were fabricated by micromachining technology with a standard IC process. The diaphragm thickness is precisely controlled by electrochemical etch-stop method. The pressure sensitivity variation across a 5-inch wafer of 5 % was obtained.