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최소차원 토크ㆍ관성 관측기를 이용한 전동기 극저속 운전
김은기(Eun-Gi Kim),전기영(Kee-Young Jeon),오봉환(Bong-Hwan Oh),정춘병(Choon-Byeong Chung),이훈구(Hoon-Goo Lee),김용주(Yong-Joo Kim),서영수(Young-Soo Seo),한경희(Kyung-Hee Han) 전력전자학회 2005 전력전자학술대회 논문집 Vol.- No.-
In this paper, an instantaneous speed observer with a reduced order is proposed to implement an indirect control for an motor with excellent dynamic stability and performance in a very low speed region. The proposed observer can estimate the instantaneous speed in very low speed region and simplify the system configuration by adopting a least order load torque-inertia observer to estimate the load torque and the rotor speed. Simulation are carried out to illustrate the performance of the proposed estimator at very low speed.
서정하(Jung Ha Seo),전기영(Gi Young Jeon),전한수(Han Su Jeon) 한국기술혁신학회 2007 기술혁신학회지 Vol.10 No.2
기술준비수준(TRL)은 미항공우주국(NASA)에서 1995년 처음 제안되었다. TRL의 정의는 하드웨어 및 소프트웨어 제품에 적합하도록 변형되어 사용되었다. 많은 국가 연구개발사업은 이와 유사한 평가기준을 가지고 있으나, 전문가의 개인적 역량에 따라 평가결과가 많은 영향을 받게 되며, 상대적으로 개발기술의 성능과 시작품의 신뢰성도 낮은 편이다. 본 연구의 목적은 부품소재사업에 TRL을 적용하는 것이다. 이를 위해서 부품소재사업에 적합한 TRL 개념을 정의하고, 기술 분야별로 세 가지로 나누어 구체적으로 다시 정의해 보았다. 이렇게 정의된 TRL 개념의 적용 가능성을 검토하기 위하여 2007년도 신규 제안서의 TRL을 평가하여 보았다. 이로부터, 부품소재사업 신청 과제들에 대한 TRL 특성을 알 수 있었으며, TRL과 같은 객관적인 R&D 사업 관리 요소 도입의 필요성을 인식할 수 있었다. 이를 위하여, 향후 기술 분류의 세분화를 통한 구체적인 TRL 판단기준을 개발하는 것이 중요한 요소이다. Technology Readiness Levels were initially proposed by NASA in 1995. TRL's definition and range were modified within adopted fields such as hardware and software products. Many national R&D programs have similar evaluation conditions. However, they are influenced by the experts' ability. Relatively, they have shown the little reliance and the low performance of the developed prototype and technology. The purpose of this study is to apply the TRL to the materials and components development program. We defined TRLs for the program and devided them in three technology fields. Proposals, which were submitted for the program in 2007, were assessed with our TRL definitions for the study on the applicability. As a result, we could understand the characteristic TRLs of the technical proposals to the materials and components development program. This shows that the objective tools such as TRLs are required as the R&D program management factors. For the sake, it is the important factor that the detail directives to assess TRL should be developed according to the branches of industrial technology fields.
부유식 복합 재생에너지 플랫폼 계류선의 효과적 배치에 관한 연구
정준모(Joonmo Choung),전기영(Gi-Young Jeon),김유일(Yooil Kim) 한국해양공학회 2013 韓國海洋工學會誌 Vol.27 No.4
This paper presents the conceptual design procedure for the taut?leg mooring lines of a floating?type combined renewable energy platform. The basic configuration of the platform is determined based on an understanding of floating offshore plants. The main dimensions and mass distribution are determined based on a hydrostatic calculation. To identify the motion history of the floating platform and the tension history of the mooring lines, a hydrodynamic analysis is executed using Ansys.Aqwa. This helps in the selection of the best configuration for the mooring system such as the number of mooring lines, wire types, anchored positions, etc. In addition, the fatigue life of the mooring lines can be predicted from the tension history using the rain?flow cycle counting method.
신경회로망 제어기를 이용한 PID 파라미터 추정에 관한 연구
권중동(Jung-Dong Kwon),전기영(Kee-Young Jeon),김은기(Eun-Gi Kim),이승환(Seung-Hwan Lee),오봉환(Bong-Hwan Oh),이훈구(Hoon-Goo Lee),서영수(Young-Soo Seo),한경희(Kyung-Hee Han) 전력전자학회 2005 전력전자학술대회 논문집 Vol.- No.-
In this paper, supposed to solve these problem to PID parameters controller algorithm using ANN. In the proposed algorithm, the parameters of the controller were adjusted to reduce by on-line system the error of the speed of IM. In this process, EBPA NN was constituted to an output error value of an IM and conspired an input and output. The performance of the self-tuning controller is compared with that of the PID controller tuned by conventional method (Ziehler-Nichols). The effectiveness of the proposed control method is verified thought the Matlab Simulink and experimental results.
B10H₁₄ 이온 주입을 통한 ultra - shallow p+ - n junction 형성 및 전기적 특성
송재훈(Jae-Hoon Song),김지수(Ji-Su Kim),임성일(Seongil Im),전기영(Gi-Young Jeon),최덕균(Duck-Kyun Choi),최원국(Won-Kook Choi) 한국진공학회(ASCT) 2002 Applied Science and Convergence Technology Vol.11 No.3
Decaborane B_(10)H₁₄ 이온 주입법으로 n-type Si (100) 기판에 ultra-shallow p^+-n 접합을 형성시켰다. 이온 주입에너지는 5 ㎸와 10 ㎸, 이온 선량은 1×10¹²/㎠와 1×10¹³/㎠로 decaborane을 이온 주입시켰다. 이온 주입된 시료들은 N₂ 분위기에서 800℃, 900℃, 1000℃에서 10초 동안 RTA(Rapid Thermal Annealing) 처리를 하였다. 또한 가속 에너지에 따른 결함을 확인하기 위해서 15 ㎸의 이온 주입 에너지에서 1×10¹⁴/㎠만큼 이온 주입하였다. 2 MeV ⁴He^(2+) channeling spectra에서 15 ㎸로 주입된 시료가 bare n-type Si와 5 ㎸, 10 ㎸의 에너지로 주입된 시료보다 주입시 생긴 결함에 의해 backscattering yield가 더 높게 나타났으며 spectra로부터 얻은 이온 주입으로 인한 비정질층의 두께는 표면으로부터 가속전압이 5 ㎸, 10 ㎸, 15 ㎸일 때 각각 1.9 ㎚, 2.5 ㎚, 4.3 ㎚였다. 10 ㎸에서 이온 주입된 시료를 800℃ 열처리 한 결과 결함의 회복으로 인해 bare Si와 비슷한 backscattering yield를 보였으며 이때의 계산된 비정질 층의 두께는 0.98 ㎚이었다. 홀 측정과 면저항 측정은 dopant의 활성화가 주입된 에너지, 이온 선량, 열처리 온도에 따라 증가함을 보여주었다. I-V 측정 결과 누설 전류 밀도는 열처리 온도가 800℃에서 1000℃까지 증가함에 따라 감소하였고 주입에너지가 5 ㎸에서 10 ㎸까지 증가함에 따라 증가하였다. Fabricated were ultra-shallow p^+-n junctions on n-type Si(100) substrates using decaborane (B_(10)H₁₄) ion implantation. Decaborane ions were implanted at the acceleration voltages of 5 ㎸ to 10 ㎸ and at the dosages of 1×10¹²/㎠, 1×10¹³/㎠. The implanted specimens were annealed at 800℃, 900℃ and 1000℃ for 10 s in N₂ atmosphere through a rapid thermal process. From the measurement of the implantation-induced damages through 2 MeV ⁴He^(2+) channeling spectra, the implanted specimen at the acceleration voltage of 15 ㎸ showed higher backscattering yield than those of the bare n-type Si wafer and the implanted specimens at 5 ㎸ and 10 ㎸. From the channeling spectra, the calculated thicknesses of amorphous layers induced by the ioin implantation at the acceleration voltages of 5 ㎸, 10 ㎸ and 15 ㎸ were 1.9 ㎚, 2.5 ㎚ and 4.3 ㎚, respectively. After annealing at 800℃ for 10 s in N2 atmosphere, most implantationinduced damages of the specimens implanted at the acceleration voltage of 10 ㎸ were recovered and they exhibited the same channeling yield as the bare Si wafer. In this case, the calculated thickness of the amorphous layer was 0.98 ㎚. Hall measurements and sheet resistance measurements showed that the dopant activation increased with implantation energy, ion dosage and annealing temperature. From the current-voltage measurement, it is observed that leakage current density is decreased with the increase of annealing temperature and implantation energy.
신경회로망 제어기를 이용한 PID 파라미터 추정에 관한 연구
權重東,裵銀敬,金恩基,全基英,李承桓,吳鳳煥,李勳九,金容珠,韓慶熙 明知大學校 産業技術硏究所 2006 産業技術硏究所論文集 Vol.25 No.-
In this paper, supposed to solve these problem to PID parameters controller algorithm using ANN. In the proposed algorithm, the parameters of the controller were adjusted to reduce by on-line system the error of the speed of IM. In this process, EBPA NN was constituted to an output error value of an IM and conspired an input and output. The performance of the self-tuning controller is compared with that of the PH) controller tuned by conventional method (Ziehler-Nichols). The effectiveness of the proposed control method is verified thought the Matlab Simulink and experimental results.