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스핀코팅 방법으로 제작된 ZnO 박막의 두께에 따른 구조적 및 광학적 특성
임광국,김민수,김군식,최현영,전수민,조민영,김형근,이동율,김진수,김종수,이주인,임재영,Yim, Kwang-Gug,Kim, Min-Su,Kim, Ghun-Sik,Choi, Hyun-Young,Jeon, Su-Min,Cho, Min-Young,Kim, Hyeoung-Geun,Lee, Dong-Yul,Kim, Jin-Soo,Kim, Jong-Su,Lee, Joo 한국진공학회 2010 Applied Science and Convergence Technology Vol.19 No.4
스핀코팅 방법으로 제작된 ZnO 박막의 두께에 따른 구조적 및 광학적 특성에 관한 연구를 수행하였다. ZnO 박막의 두께가 두꺼워짐에 따라 줄무늬 모양의 폭과 밀도가 증가하고, 두께가 450 nm 일 때 줄무늬 모양은 사라지며 표면이 매끄러워졌다. ZnO 박막의 표면이 매끄러워졌을 때 orientation factor ${\alpha}_{(002)}$가 급격히 증가하였고, (002) 회절 피크의 FWHM (full width at half maximum)는 감소하였다. ZnO 박막의 NBE (near-band edge emission) 피크의 위치는 두께와 표면 형태의 영향을 거의 받지 않았으나, 매끄러운 표면을 갖는 ZnO 박막의 DLE (deep level emission) 피크의 위치는 청색편이 하였다. ZnO 박막의 두께가 증가함에 따라 DLE 피크에 대한 NBE 피크의 발광세기 비율이 증가하는 경향을 보였고, NBE 피크의 FWHM은 감소하는 경향을 보였다. Thickness effects on the structural and optical properties of ZnO thin films fabricated by spin coating method have been carried out. With increase in the thickness of the ZnO thin films, the width and density of striation shape are increased. The ZnO thin film with thickness of 450 nm has a smooth surface morphology. For the ZnO thin film with a smooth surface, orientation factor ${\alpha}_{(002)}$ is sharply increased and FWHM of (002) diffraction peak is decreased compared to the ZnO thin films with a striation shape surface. Thickness and surface morphology of the ZnO thin films hardly affect the NBE peak position. However, the DLE peak position is blue-shifted as the surface morphology is changed from striation to smooth surface. The PL intensity ratio of the NBE to DLE is increased and the FWHM of NBE peak is decreased as the thickness of the ZnO thin films is increased.
As과 Ga 빔 조사에 의해 세척된 Si(100) 기판 위에 GaAs 에피층 성장과 RHEED 패턴
임광국(Kwang Gug Yim),김민수(Min Su Kim),임재영(Jae-Young Leem) 한국표면공학회 2010 한국표면공학회지 Vol.43 No.4
The GaAs epitaxial layers were grown on Si(100) substrates by molecular beam epitaxy(MBE) using the two-step method. The Si(100) substrates were cleaned with different surface cleaning method of vacuum heating, As-beam, and Ga-beam at the substrate temperature of 800℃. Growth temperature and thickness of the GaAs epitaxial layer were 800℃ and 1 ㎛, respectively. The surface structure and epitaxial growth were observed by reflection high-energy electron diffraction(RHEED) and scanning electron microscope(SEM). Just surface structure of the Si(100) substrate cleaned by Ga-beam at 800oC shows double domain (2 × 1). RHEED patterns of the GaAs epitaxial layers grown on Si(100) substrates with cleaning method of vacuum heating, As-beam, and Ga-beam show spot-like, (2 × 4) with spot, and clear (2 × 4). From SEM, it is found that the GaAs epitaxial layers grown on Si(100) substrates with Ga-beam cleaning has a high quality.
열처리 온도 및 분위기에 따른 다공질 실리콘의 구조 및 광학적 특성
최현영,임광국,전수민,조민영,김군식,김민수,이동율,김진수,김종수,임재영,Choi, Hyun-Young,Yim, Kwang-Gug,Jeon, Su-Min,Cho, Min-Young,Kim, Ghun-Sik,Kim, Min-Su,Lee, Dong-Yul,Kim, Jin-Soo,Kim, Jong-Su,Leem, Jae-Young 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.8
The porous Si (PS) was annealed at various temperature in air, argon, and nitrogen atmosphere. Structural and optical properties of the annealed PS were investigated by scanning electron microscopy (SEM) and photoluminescence (PL). It is found that the shape of pore is changed from circle to channel as increasing annealing temperature which was annealed in air and argon atmosphere. In case of PS annealed in nitrogen atmosphere, the shape of pore is changed from channel to circle with increase annealing temperature from 600 to $800^{\circ}C$. The PL peak position is blue-shifted with increasing annealing temperature. As annealing temperature increases, the PL intensity of the PS annealed in argon is decreased but that of the PS annealed in nitrogen is increased. It might be due to the formation of Si-N bonds and it passivates the non-radiative centers which is Si dangling bonds on the surface of the PS.
스핀코팅 방법으로 제작된 ZnO 나노 섬유질 박막의 전구체 농도에 따른 표면 및 광학적 특성
김민수,김군식,임광국,조민영,전수민,최현영,이동율,김진수,김종수,이주인,임재영,Kim, Min-Su,Kim, Ghun-Sik,Yim, Kwang-Gug,Cho, Min-Young,Jeon, Su-Min,Choi, Hyun-Young,Lee, Dong-Yul,Kim, Jin-Soo,Kim, Jong-Su,Lee, Joo-In,Leem, Jae-Young 한국진공학회 2010 Applied Science and Convergence Technology Vol.19 No.6
ZnO nano-fibrous thin films with various precursor concentrations ranging from 0.2 to 1.0 mol (M) were grown by spin-coating method and effects of the precursor concentration on surface and optical properties of the ZnO nano-ribrous thin films were investigated by using scanning electron microscopy (SEM) and photoluminescence (PL). ZnO nuclei were formed at the precursor concentration below 0.4 M and the ZnO nano-fibrous thin films were grown at the precursor concentration above 0.6 M. Further increase in the precursor concentration, the thickness of the ZnO nano-fibrous thin films is gradually increased. The intensity and the full-width at half-maximum (FWHM) of the near-band-edge emission (NBE) is increased as the precursor concentration is increased. The deep-level emission (DLE) is red-shifted as the precursor concentration is increased. 스핀코팅 방법을 이용하여 다양한 농도의 전구체로 ZnO 나노 섬유질 박막(ZnO nano-fibrous thin films)을 성장하였고, 그에 따른 표면 및 광학적 특성 변화를 scanning electron microscopy (SEM)와 photoluminescence (PL)을 이용하여 측정하였다. 전구체 농도가 0.4 mol (M) 이하 일 때는 성장률이 낮아 ZnO 핵생성만이 되었고, 0.6 M 이상일 때 ZnO 박막은 나노섬유질 구조가 되었다. 전구체 농도가 더욱 증가함에 따라 ZnO 나노 섬유질의 굵기가 굵어졌고 ZnO 박막의 두께도 단계적으로 두꺼워졌다. 전구체 농도가 증가함에 따라 ZnO 나노 섬유질 박막의 photoluminescence (PL)의 근밴드가장자리 광방출(near-band-edge emission) 피크 세기와 full-width at half-maximu (FWHM)이 증가하였고, 깊은 준위 광방출(deep-level mission) 피크는 적색편이(red-shift)하였다.
수열합성법으로 성장된 ZnO 나노막대의 전구체 농도에 따른 구조적 및 광학적 특성
조민영,김민수,김군식,최현영,전수민,임광국,이동율,김진수,김종수,이주인,임재영,Cho, Min-Young,Kim, Min-Su,Kim, Ghun-Sik,Choi, Hyun-Young,Jeon, Su-Min,Yim, Kwang-Gug,Lee, Dong-Yul,Kim, Jin-Soo,Kim, Jong-Su,Lee, Joo-In,Leem, Jae-Young 한국진공학회 2010 Applied Science and Convergence Technology Vol.19 No.3
수열합성법을 이용하여 전구체 용액 농도에 따라 성장된 ZnO 나노막대의 특성에 대한 연구를 수행하였다. ZnO 씨앗층은 sol-gel법으로 코팅하였고, 그 위에 ZnO 나노막대는 전구체 용액 농도를 0.01 M에서 0.3 M로 변화하여 성장시켰다. FE-SEM (field-emission scanning electron microscopy), XRD (X-ray diffraction), PL (photoluminescence)을 사용하여 ZnO 나노막대의 특성 변화를 분석하였다. 전구체 용액의 농도가 증가함에 따라 ZnO 나노막대의 직경과 길이가 증가하였으며 광학적 특성이 향상되었다. ZnO nanorods were grown on ZnO seed layer by hydrothermal method. The ZnO seed layer was coated by sol-gel method, and then the ZnO nanorods on ZnO seed layer were grown with different precursor concentrations ranging from 0.01 M to 0.3 M. FE-SEM (field-emission scanning electron microscopy), XRD (X-ray diffraction), and PL (photoluminescence) were employed to investigate the structural and optical properties of the ZnO nanorods. The diameter and length of ZnO nanorods are increased and also the optical properties are enhanced as the precursor concentrations are increased.
수열합성법으로 성장된 ZnO 나노구조의 성장조건에 따른 특성
조민영,김민수,김군식,최현영,전수민,임광국,이동율,김진수,김종수,이주인,임재영,Cho, Min-Young,Kim, Min-Su,Kim, Ghun-Sik,Choi, Hyun-Young,Jeon, Su-Min,Yim, Kwang-Gug,Lee, Dong-Yul,Kim, Jin-Soo,Kim, Jong-Su,Lee, Joo-In,Leem, Jae-Young 한국재료학회 2010 한국재료학회지 Vol.20 No.5
ZnO nanostructures were grown on an Au seed layer by a hydrothermal method. The Au seed layer was deposited by ion sputter on a Si (100) substrate, and then the ZnO nanostructures were grown with different precursor concentrations ranging from 0.01 M to 0.3M at $150^{\circ}C$ and different growth temperatures ranging from $100^{\circ}C$ to $250^{\circ}C$ with 0.3 M of precursor concentration. FE-SEM (field-emission scanning electron microscopy), XRD (X-ray diffraction), and PL (photoluminescence) were carried out to investigate the structural and optical properties of the ZnO nanostructures. The different morphologies are shown with different growth conditions by FE-SEM images. The density of the ZnO nanostructures changed significantly as the growth conditions changed. The density increased as the precursor concentration increased. The ZnO nanostructures are barely grown at $100^{\circ}C$ and the ZnO nanostructure grown at $150^{\circ}C$ has the highest density. The XRD pattern shows the ZnO (100), ZnO (002), ZnO (101) peaks, which indicated the ZnO structure has a wurtzite structure. The higher intensity and lower FWHM (full width at half maximum) of the ZnO peaks were observed at a growth temperature of $150^{\circ}C$, which indicated higher crystal quality. A near band edge emission (NBE) and a deep level emission (DLE) were observed at the PL spectra and the intensity of the DLE increased as the density of the ZnO nanostructures increased.
수열합성법으로 성장된 산화아연 나노막대의 특성 및 열처리 효과
전수민,김민수,김군식,조민영,최현영,임광국,김형근,이동율,김진수,김종수,이주인,임재영,Jeon, Su-Min,Kim, Min-Su,Kim, Ghun-Sik,Cho, Min-Young,Choi, Hyun-Young,Yim, Kwang-Gug,Kim, Hyeoung-Geun,Lee, Dong-Yul,Kim, Jin-Soo,Kim, Jong-Su,Lee, Joo 한국진공학회 2010 Applied Science and Convergence Technology Vol.19 No.4
수열합성법으로 실리콘 (111) 기판 위에 산화아연 나노막대를 성장하였다. 산화아연 나노막대를 성장하기 전, 실리콘 기판에 스핀코팅법으로 씨앗층을 성장하였다. 산화아연 나노막대는 오토클레이브(autoclave)로 $140^{\circ}C$에서 6시간 동안 성장하였고, 아르곤 분위기에서 300, 500, $700^{\circ}C$의 온도로 20분 동안 열처리하였다. X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), photoluminescence (PL)를 이용하여 열처리한 산화아연 나노막대의 구조적, 광학적 특성을 분석하였다. 모든 산화아연 나노막대 시료에서 c-축 배향성을 나타내는 강한 ZnO (002) 회절 피크와 약한 ZnO (004) 회절 피크가 나타났다. 열처리 온도가 증가함에 따라 산화아연 나노로드의 residual stress는 compressive에서 tensile로 변하였다. Hexagonal 형태의 산화아연 나노로드를 관찰하였다. 산화아연 나노로드의 PL 스펙트럼은 free-exciton recombination에 의해 3.2 eV에서 좁은 near-band-edge emission (NBE) 피크와 산화아연 나노막대의 결함에 의해 2.12~1.96 eV에서 넓은 deep-level emission (DLE) 피크가 나타났다. 산화아연 나노막대를 열처리함에 따라, NBE 피크의 세기는 감소하였고 DLE 피크는 열처리에 의해 발생한 산소 관련 결함에 의하여 적색편이 하였다. Vertically aligned ZnO nanorods on Si (111) substrate were prepared by hydrothermal method. The ZnO nanorods on spin-coated seed layer were synthesized at $140^{\circ}C$ for 6 hours in autoclave and were thermally annealed in argon atmosphere for 20 minutes at temperature of 300, 500, $700^{\circ}C$. The effects of the thermal annealing on the structural and optical properties of the grown on ZnO nanorods were investigated by X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), photoluminescence (PL). All the ZnO nanorods show a strong ZnO (002) and weak (004) diffraction peak, indicating c-axis preferred orientation. The residual stress of the ZnO nanorods is changed from compressive to tensile by increasing annealing temperature. The hexagonal shaped ZnO nanorods are observed. The PL spectra of the ZnO nanorods show a sharp near-band-edge emission (NBE) at 3.2 eV, which is generated by the free-exciton recombination and a broad deep-level emission (DLE) at about 2.12~1.96 eV, which is caused by the defects in the ZnO nanorods. The intensity of the NBE peak is decreased and the DLE peak is red-shifted due to oxygen-related defects by thermal annealing.
졸겔법으로 제작된 Al-doped ZnO 박막의 Aluminum Chloride 농도에 따른 구조적 및 광학적 특성
조관식 ( Guan Sik Cho ),김민수 ( Min Su Kim ),임광국 ( Kwang Gug Yim ),이재용 ( Jae Yong Lee ),임재영 ( Jae Young Leem ) 대한금속재료학회(구 대한금속학회) 2012 대한금속·재료학회지 Vol.50 No.11
Al-doped ZnO (AZO) thin films were grown on quartz substrates by the sol-gel method. The effects of the Al mole fraction on the structural and optical properties of the AZO thin films were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and UV-VIS spectroscopy. The particle size of the AZO thin films decreased with an increase in Al concentrations. The optical parameters, the optical band gap, absorption coefficient, refractive index, dispersion parameter, and optical conductivity, were studied in order to investigate the effects of Al concentration on the optical properties of AZO thin films. The dispersion energy, single-oscillator energy, average oscillator wavelength, average oscillator strength, and refractive index at an infinite wavelength of the AZO thin films were affected by the Al incorporation. The optical conductivity of the AZO thin films also increased with increasing photon energy.
논문 : Sol-Gel 방법으로 제작된 Cd(x)Zn(1-x)O 박막의 조성비에 따른 구조적 및 광학적 특성
천민종 ( Min Jong Cheon ),김소아람 ( So A Ram Kim ),남기웅 ( Gi Woong Nam ),임광국 ( Kwang Gug Yim ),김민수 ( Min Su Kim ),임재영 ( Jae Young Leem ) 대한금속재료학회(구 대한금속학회) 2011 대한금속·재료학회지 Vol.49 No.7
Cd(x)Zn(1-x)O thin films were grown on quartz substrates by using the sol-gel spin-coating method. The mole fraction, x, of the Cd(x)Zn(1-x)O thin films was controlled from 0 to 1 by changes in the content ratio of the cadmium acetate dehydrate [Cd(CH3COO)2·(2H)2O] and zinc acetate dehydrate [Zn(CH3COO)2·(2H)2O]. The effects of the mole fraction on the morphological, structural, and optical properties of the Cd(x)Zn(1-x)O thin films were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and UV-visible spectroscopy. The Cd(x)Zn(1-x)O thin films exhibited the polygonal surface morphology and their grain size was increased ranging from 42.1 to 63.9 nm with the increase in the mole fraction. It was observed that the absorption bandgap of the Cd(x)Zn(1-x)O thin films decreased from 3.25 to 2.16 eV as the mole fraction increased and the Urbach energy (E(U)) values changed inversely to the optical bandgap of the Cd(x)Zn(1-x)O thin films.
양극산화 시간 및 전류밀도 변화에 따른 다공질 실리콘의 특성 변화
최현영(Hyun Young Choi),김민수(Min Su Kim),김군식(Ghun Sik Kim),조민영(Min Young Cho),전수민(Su Min Jeon),임광국(Kwang Gug Yim),이동율(Dong-Yul Lee),김진수(Jin Soo Kim),김종수(Jong Su Kim),임재영(Jae-Young Leem) 한국표면공학회 2010 한국표면공학회지 Vol.43 No.3
The PS(porous Si) were fabricated with different anodization time and current density. The structural and optical properties of PS were investigated by SEM(scanning electron microscopy), AFM(atomic force microscopy), and PL(photoluminescence). It is found that the pore size and surface roughness of PS are proportional to the current density. The PL spectra show that the PL peak position is red-shifted with increasing anodization time. This behavior corresponds to the change of pore size which is consistent with the quantum confinement model. The FWHM(full width at half maximum) of PL peak is decreased from 97 to 51 nm and the PL peak position is blue-shifted with increasing current density up to 10 ㎃/㎠. The PL peak intensity of the PS fabricated under 1 ㎃/㎠ is the highest among samples.