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유기 / 무기 나노 템플레이트를 이용한 나노 정보소재 합성 연구
이전국(Jeon-Kook Lee),정원용(Won Young Jeung) 한국자기학회 2004 韓國磁氣學會誌 Vol.14 No.4
The fusion of nano technology and information technology is essential to sustain the present growth rate and to induce new industry in this ever-growing information age. Considering Korean industry whose competitiveness lies heavily on information related technologies, this field will be inevitable for future. Nano materials can be described as novel materials whose size of elemental structure has been engineered at the nanometer scale. Materials in the nanometer size range exhibit fundamentally new behavior, as their size falls below the critical length scale associated with any given property. Bottom-up techniques involve manipulating individual atoms and molecules. Bottom-up process usually implies controlled or directed self assembly of atoms and molecules into nano structures. It resembles more closely the processes of biology and chemistry, where atoms and molecules come together to create structures such as crystals or living cells. Nano scale sensors are included in the electronics area since the diverse sensing mechanisms are often housed on a semiconductor substrate and usually give rise to an electronic signal. The application of nano technology to the chemical sensors should allow improvements in functionality such as gas sensing. In this presentation, we will discuss about the nano scale information materials and devices fabricated by using the organic/inorganic nano templates.
산화티탄의 광전기화학 특성을 이용한 퍼클로레이트 이온 제거
민형섭,이전국,Min, Hyung-Seob,Lee, Jeon-Kook 한국재료학회 2008 한국재료학회지 Vol.18 No.8
Titanium oxide films and powders are attached onto carbon cloths via RF reactive sputtering and an epoxy resin mixture, respectively. $TiO_2$/carbon composite materials were used to investigate the photoelectrochemical degradation of perchlorate ions in water. The energy band gaps of the RF-sputtered $TiO_2$ thin films ranged from 3.35-3.44 eV. A photocurrent of the powdered $TiO_2$ as illuminated by ultra-violet light for 30 min. was $2.79\;mA/cm^2$. Perchlorate ions in water were shown to be degradable by a UV-illuminated $TiO_2$ powder/carbon/Nafion/carbon composite.
최현주,임대순,이전국,Choi, Hyun-Ju,Lim, Dae-Soon,Lee, Jeon-Kook 한국세라믹학회 2004 한국세라믹학회지 Vol.41 No.9
(110) 배향 TiO$_2$ 단결정 위에 성장시킨 CrO$_2$(110) 박막의 결정 구조, 미세구조와 자기적 특성의 상관 관계에 대해 연구하였다. 소스 물질로는 CrO$_3$ 분말을 사용하였으며, 열분해 화학증착법으로 CrO$_2$박막을 형성하였다. (110) 배향된 TiO$_2$루타일 단결정 위에 형성된 CrO$_2$ 박막은 (110) 방향으로 우선 배향되었고, 미세구조적으로 평활한 박막을 형성하였다. 흘려주는 산소량이 많을수록 CrO$_2$ 박막의 두께가 두꺼워지고 저항치가 낮았으며, 음의 자기저항치의 변화 및 자기 이력 곡선에서 보자력과 잔류 자화 값이 감소하는 경향을 보였다. We report the magnetic properties, microstructures, and crystal orientations of the CrO$_2$ thin films on TiO$_2$ single crystals. CrO$_2$ thin films were deposited by thermal decompositions with CrO$_3$ source materials. The microstructure of (110) oriented CrO$_2$ thin films deposited on (110) TiO$_2$ single crystals were uniform. As the oxygen flow rates increased, the resistivity, coercive field, and remnant magnetization of the CrO$_2$ thin films on TiO$_2$ single crystals decreased.
양자점 층의 미세구조 형상이 양자점 LED 전계 발광 특성에 미치는 효과
윤성룡,전민현,이전국,Yoon, Sung-Lyong,Jeon, Minhyon,Lee, Jeon-Kook 한국재료학회 2013 한국재료학회지 Vol.23 No.8
Quantum dots(QDs) with their tunable luminescence properties are uniquely suited for use as lumophores in light emitting device. We investigate the microstructural effect on the electroluminescence(EL). Here we report the use of inorganic semiconductors as robust charge transport layers, and demonstrate devices with light emission. We chose mechanically smooth and compositionally amorphous films to prevent electrical shorts. We grew semiconducting oxide films with low free-carrier concentrations to minimize quenching of the QD EL. The hole transport layer(HTL) and electron transport layer(ETL) were chosen to have carrier concentrations and energy-band offsets similar to the QDs so that electron and hole injection into the QD layer was balanced. For the ETL and the HTL, we selected a 40-nm-thick $ZnSnO_x$ with a resistivity of $10{\Omega}{\cdot}cm$, which show bright and uniform emission at a 10 V applied bias. Light emitting uniformity was improved by reducing the rpm of QD spin coating.At a QD concentration of 15.0 mg/mL, we observed bright and uniform electroluminescence at a 12 V applied bias. The significant decrease in QD luminescence can be attributed to the non-uniform QD layers. This suggests that we should control the interface between QD layers and charge transport layers to improve the electroluminescence.
산소 분압의 변화에 따른 Cr-Doped SrZrO<sub>3</sub> 페로브스카이트 박막의 저항변화 특성
양민규,박재완,이전국,Yang, Min-Kyu,Park, Jae-Wan,Lee, Jeon-Kook 한국재료학회 2010 한국재료학회지 Vol.20 No.5
A non-volatile resistive random access memory (RRAM) device with a Cr-doped $SrZrO_3/SrRuO_3$ bottom electrode heterostructure was fabricated on $SrTiO_3$ substrates using pulsed laser deposition. During the deposition process, the substrate temperature was $650^{\circ}C$ and the variable ambient oxygen pressure had a range of 50-250 mTorr. The sensitive dependences of the film structure on the processing oxygen pressure are important in controlling the bistable resistive switching of the Cr-doped $SrZrO_3$ film. Therefore, oxygen pressure plays a crucial role in determining electrical properties and film growth characteristics such as various microstructural defects and crystallization. Inside, the microstructure and crystallinity of the Cr-doped $SrZrO_3$ film by oxygen pressure were strong effects on the set, reset switching voltage of the Cr-doped $SrZrO_3$. The bistable switching is related to the defects and controls their number and structure. Therefore, the relation of defects generated and resistive switching behavior by oxygen pressure change will be discussed. We found that deposition conditions and ambient oxygen pressure highly affect the switching behavior. It is suggested that the interface between the top electrode and Cr-doped $SrZrO_3$ perovskite plays an important role in the resistive switching behavior. From I-V characteristics, a typical ON state resistance of $100-200\;{\Omega}$ and a typical OFF state resistance of $1-2\;k{\Omega}$, were observed. These transition metal-doped perovskite thin films can be used for memory device applications due to their high ON/OFF ratio, simple device structure, and non-volatility.
실리콘 기판위에서의 Cr-Doped SrZrO<sub>3</sub> 박막의 저항변화 특성
양민규,고태국,박재완,이전국,Yang, Min-Kyu,Ko, Tae-Kuk,Park, Jae-Wan,Lee, Jeon-Kook 한국재료학회 2010 한국재료학회지 Vol.20 No.5
One of the weak points of the Cr-doped SZO is that until now, it has only been fabricated on perovskite substrates, whereas NiO-ReRAM devices have already been deposited on Si substrates. The fabrication of RAM devices on Si substrates is important for commercialization because conventional electronics are based mainly on silicon materials. Cr-doped ReRAM will find a wide range of applications in embedded systems or conventional memory device manufacturing processes if it can be fabricated on Si substrates. For application of the commercial memory device, Cr-doped $SrZrO_3$ perovskite thin films were deposited on a $SrRuO_3$ bottom electrode/Si(100)substrate using pulsed laser deposition. XRD peaks corresponding to the (112), (004) and (132) planes of both the SZO and SRO were observed with the highest intensity along the (112) direction. The positions of the SZO grains matched those of the SRO grains. A well-controlled interface between the $SrZrO_3$:Cr perovskite and the $SrRuO_3$ bottom electrode were fabricated, so that good resistive switching behavior was observed with an on/off ratio higher than $10^2$. A pulse test showed the switching behavior of the Pt/$SrZrO_3:Cr/SrRuO^3$ device under a pulse of 10 kHz for $10^4$ cycles. The resistive switching memory devices made of the Cr-doped $SrZrO_3$ thin films deposited on Si substrates are expected to be more compatible with conventional Si-based electronics.