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이복형 ( Bok Hyoung Lee ) 한남대학교 과학기술법연구소 2009 과학기술법연구 Vol.14 No.1
Following the rapid growth of nuclear and radiation industries, the amount of radioactive material transports have been steeply increased. Like other dangerous goods, radioactive materials are transported according to Recommendations on the Transport of Dangerous Goods (Orange Book) which published the United Nations. The Orange Book includes the Regulations for the Safe Transport of Radioactive Material (TS-R-1) published by the International Atomic Energy Agency (IAEA). Because transports of radioactive material are occurred internationally, technical standards and safety control system should be harmonized among relative nations and international organizations for transports. For the harmonization, IAEA collects opinions periodically from member states and relative organizations and revise TS-R-1 every two years. Korean government had been adapted TS-R-1 on the Atomic Energy Act (AEA) and supplementary decrees, regulations and notice. Because AEA includes all things about nuclear and radiation such as the Atomic Energy Committee, nuclear power plants, research reactors, fissile material facilities, radioisotopes, radiation generators, radioactive wastes, transport of radioactive material, etc., it has a lot of provisions. On the contrary, provisions about a certain category are dispersed and multiply entrusted to supplementary decrees, regulations and notices. Provisions for the safe transport of radioactive material are also dispersed in AEA, Enforcement Decree of AEA, Enforcement Regulations of AEA, Regulations of Technical Standards for Safe Control of Radiation, Notices of Ministry of Education, Science and Technology. That makes it difficult to understand meaning of provisions and revision process. So, it is need to assemble provisions in one regulations.
Design and fabrication of the MMIC frequency doubler for 29 GHz local oscillator application
김진성,이성대,이복형,김성찬,설우석,임병옥,김삼동,박현창,박형무,이진구,Kim, Jin-Sung,Lee, Seong-Dae,Lee, Bok-Hyoung,Kim, Sung-Chan,Sul, Woo-Suk,Lim, Byeong-Ok,Kim, Sam-Dong,Park, Hyun-Chang,Park, Hyung-Moo,Rhee, Jin-Koo The Institute of Electronics and Information Engin 2001 電子工學會論文誌-TC (Telecommunications) Vol.38 No.11
밀리미터파 대역에서 안정적이고 경제적인 local oscillator (LO) 신호를 생성하기 위한 주파수 체배기를 설계 및 제작하였다. 주파수 체배기는 14.5 GHz를 입력받아 29 GHz를 생성하도록 설계되었으며, 측정 결과 14.5 GHz에서 S11이 -9.2 dB, 29 GHz에서 S22가 -18.6 dB 로 입력 측은 14.5 GHz에, 출력 측은 29GHz에 매칭이 되었다. 변환손실의 경우 14.5 GHz에서 입력전력 6 dBm일 때 최소 값인 18.2 dB를 보였으며, 출력 단에서의 주파수 스펙트럼 특성은 14.5 GHz에서 15.2dB의 값을 나타내었다. 또한 입력신호의 isolation특성은 10.5 GHz에서 18.5GHz까지 주파수 범위에서 30 dB이상의 값을 보였다. 제작된 MMIC(Microwave monolithic integrated circuits) 주파수 체배기의 칩 사이즈는 $1.5{\times}2.2\;mm^2$이다. We demonstrate the MMIC (monolithic microwave integrated circuit) frequency doublers generating stable and low-cost 29 GHz local oscillator signals from 14.5 GHz input signals. These devices were designed and fabricated by using the M MIC integration process of $0.1\;{\mu}m$ gate-length PHEMTs (pseudomorphic high electron mobility transistors) and passive components. The measurements showed S11 or -9.2 dB at 145 GHz, S22 of -18.6 dG at 29 GHz and a minimum conversion loss of 18.2 dB at 14.5 GHz with an input power or 6 dBm. Fundamental signal of 14.5 GHz were suppressed below 15.2 dBe compared to the second harmonic signal at the output port, and the isolation characteristics of fundamental signal between the input and the output port were maintained above :i0 dB in the frequency range 10.5 GHz to 18.5 GHz. The chip size of the fabricated MMIC frequency doubler is $1.5{\times}2.2\;mm^2$.
GaN HEMT를 이용한 스위칭 모드 전력증폭기 설계 및 전력증폭기의 Ruggedness 특성 분석
최길웅(Gil-Wong Choi),이복형(Bok-Hyoung Lee),김형주(Hyoung-Joo Kim),김상훈(Sang-Hoon Kim),최진주(Jin-Joo Choi),김동환(Dong-Hwan Kim),김선주(Seon-Joo Kim) 한국전자파학회 2013 한국전자파학회논문지 Vol.24 No.4
본 논문은 GaN(Gallium Nitride) HEMT(High Electron Mobility Transistor)를 이용한 S대역 레이더용 전력증폭기 설계하고 제작된 스위칭 모드 전력증폭기의 ruggedness 시험에 관련된 내용을 기술하였다. 고효율 특성을 위해 전력증폭기를 Class-F로 설계하였으며, 측정을 위한 입력 신호는 100 ㎲의 pulse width 및 10 %의 duty cycle인 pulse 신호를 사용하였다. 제작된 Class-F 전력증폭기의 중심 주파수에서 측정한 결과, 8.7 ㏈의 전력 이득과 42 ㏈m의 출력 전력, 54.2 %의 전력 부가 효율(PAE) 및 62.6 %의 드레인 효율이 측정되었다. 또한, 전력증폭기의 신뢰성 시험의 일환으로 Ruggedness 시험을 위한 실험 구성을 제안하고, VSWR(Voltage Standing Wave Ratio)을 변화시켜 출력 전력과 효율을 측정하였다. 설계된 전력증폭기가 VSWR 변화에 따라 출력 전력 32.6~41.1 ㏈m까지 변화하고, 드레인 효율은 23.4~63 %까지 변하는 특성을 얻을 수 있었다. This paper presents design, fabrication and ruggedness test of switching-mode power amplifier using GaN(Gallium Nitride) HEMT(High Electron Mobility Transistor) for S-band radar applications. The power amplifier is designed to Class-F for high efficiency. The input signal for the measurement of the power amplifier is pulse signal at 100 ㎲ pulse width and duty cycle of 10 %. The measurement results of the fabricated Class-F power amplifier are a power gain of 10.8 ㏈, an output power of 40.8 ㏈m, a power added efficiency(PAE) of 54.2 %, and a drain efficiency of 62.6 %, at the center frequency. We proposed reliability test set-up of a power amplifier for ruggedness test. And we measured output power and efficiency according to VSWR(Voltage Standing Wave Ratio) variation. The designed power amplifier achieved output power of 32.6~41.1 ㏈m and drain efficiency of 23.4~63 % by changing VSWR, respectively.
임병옥(MByeong-Ok),윤재희(Jae-Hee Yoon),최길웅(Gil-Woong Choi),이복형(Bok-Hyung Lee),김형주(Hyoung-Joo Kim) 제어로봇시스템학회 2012 제어로봇시스템학회 합동학술대회 논문집 Vol.2012 No.7
This paper introduces the design, implementation and measurements of a GaN-based SSPA(Solid-State Power Amplifier) which is applicable to the radar system with more than 1.6 kW output in S-Band. SSPA consists of HPA(High Power Amplifier) module, DA(Drive Amplifier) module, digital control module and power supply module. HPA is composed of parallel configuration of 250 W high power amplifier adopting GaN HEMT. The HPA is also designed with the 8-way divider/coupler adopting LTCC. DA accommodates an ALC(Automatic Level Control) function. Error detection sensor in digital control module improves the operator"s convenience by displaying operation and error status. In addition, the SSPA is verified as a reliable military component by conducting MIL-STD level environmental test.
김상일(Sang-Il Kim),임병옥(Byeong-Ok Lim),최길웅(Gil-Wong Choi),이복형(Bok-Hyung Lee),김형주(Hyoung-Joo Kim),김륜휘(Ryun-Hwi Kim),임기식(Ki-Sik Im),이정희(Jung-Hee Lee),이정수(Jung-Soo Lee),이종민(Jong-Min Lee) 한국전자파학회 2013 한국전자파학회논문지 Vol.24 No.2
본 논문에서는 Si가 도핑된 Modulation-doped AlGaN/GaN 이종 접합 구조를 가지는 전력증폭기용 MISHFET 소자를 제작하였다. 제작된 GaN TR 소자는 6H-SiC(0001)의 Substrate 위에 성장시켰으며, 180 nm의 gate length를 가진다. 제작된 소자를 측정한 결과, 837 ㎃/㎜의 최대 드레인 전류 특성, 177 mS/㎜의 gm(Tranconductance)을 가지며, fT는 45.6 ㎓, f㎃X는 46.5 ㎓로 9.3 ㎓에서 1.54 W/㎜의 전력 밀도와 40.24 %의 PAE를 가지는 것으로 확인되었다. This letter presents the MISHFET with si-doped AlGaN/GaN heterostructure for power amplifier. The device grown on 6H-SiC(0001) substrate with a gate length of 180 nm has been fabricated. The fabricated device exhibited ㎃ximum drain current density of 837 ㎃/㎜ and peak transconductance of 177 mS/㎜. A unity current gain cutoff frequency was 45.6 ㎓ and maximum frequency of oscillation was 46.5 ㎓. The reported output power density was 1.54 W/㎜ and A PAE(Power Added Efficiency) was 40.24 % at 9.3 ㎓.