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직렬 복합 트랜지스터를 이용한 저전압 가변 트랜스컨덕터의 설계
윤창훈,유영규,최석우,Yun, Chang-Hun,Yu, Young-Gyu,Choi, Seok-Woo 대한전자공학회 2001 電子工學會論文誌-SC (System and control) Vol.38 No.5
본 논문에서는 직렬 복합 트랜지스터를 이용한 저전압 선형 가변 트랜스컨덕터를 설계하였다. 직렬 복합트랜지스터는 포화 영역에서 동작하는 트랜지스터와 선형 영역에서 동작하는 트랜지스터가 직렬 연결된 구조로 낮은 공급 전압에서도 넓은 입력 전압 범위를 갖는다. 설계된 트랜스컨덕터는 $0.25{\mu}m$ CMOS n-well 공정 파라미터를 이용하여 HSPICE로 시뮬레이션한 결과 차단주파수는 309MHz 이고, 입력 신호 주파수가 10MHz일 때 1.5VP-P의 차동 입력에 대해 1.1%이하의 THD 특성을 갖는다. In this paper, the low voltage linear tunable transconductors using the series composite transistor are presented. Due to the series composite transistor operating in the saturation region and the triode region, the proposed circuits have wide input range at low supply voltage. The designed transconductors have been simulated by HSPICE using $0.25{\mu}m$ n-welll CMOS process. Simulation results show that the cutoff frequency is 309M Hz and the THD of less than 1.1% can be obtained for the differential input signal of up to l.5VP-P with the input signal frequency of l0MHz.
The Study of the Laser-driven Nanostructural Reorganization of Polymer Semiconducting Materials
Changhun Yun(윤창훈) 한국고분자학회 2021 한국고분자학회 학술대회 연구논문 초록집 Vol.46 No.1
In organic electronic devices, solution-processed polymer semiconducting materials have been widely studied for a low-cost alternative to the conventional vacuum processed devices. Because the device performance from the polymer semiconductors can be governed by the nano-structure of the polymeric layer, lots of researchers have investigated the influence of solvent treatments during preparing the polymer thin layer. In this respect, we present the novel method to change the nano-structure of polymer semiconducting layer using laser-based heating. In this way, we have found that the laser irradiation can promote nanoscale reorganization of PEDOT:PSS layer and can enhance its electrical conductivity up to three orders of magnitude. For the polymer semiconducting layers in OLEDs, the laser-induced heat alters the solid or crystal structure so that the irradiated areas can be selectively deactivated in its electrical conductivity.
완전평형 전류 적분기를 이용한 3V CMOS 연속시간 필터 설계
안정철,유영규,최석우,김동용,윤창훈,An, Jeong-Cheol,Yu, Yeong-Gyu,Choe, Seok-U,Kim, Dong-Yong,Yun, Chang-Hun 대한전자공학회 2000 電子工學會論文誌-SC (System and control) Vol.37 No.4
본 논문에서는 완전평형 전류 적분기를 이용하여 저전압 구동이 가능하고 고주파수 응용이 가능한 연속시간 필터를 설계하였다. 적분기 회로의 평형 구조 특성 때문에 짝수 차수의 고조파 성분들이 제거되고, 입력 신호 범위가 2배가되어 제안된 필터는 개선된 잡음 특성과 넓은 동적범위를 갖는다. 또한 상보형 전류미러를 이용하기 때문에 바이어스 회로가 간단하고 필터의 차단주파수는 단일 바이어스 전류원에 의해 간단히 제어할 수 있다. 설계의 예로 3차 버터워스 저역통과 필터를 개구리도약법으로 구현하였고, 제안된 완전평형 전류모드 필터는 0.65㎛ CMOS n-well 공정 파라미터를 이용하여 SPICE 시뮬레이션한 후 필터의 특성을 검토하였다. 시뮬레이션 결과 3V의 공급 전압에서 50㎒의 차단주파수, 1%의 THD에서 69㏈의 동적 범위를 갖고, 전력소모는 4㎽이다. In this paper, a continuous-time filter for low voltage and high frequency applications using fully-balanced current integrators is presented. As the balanced structure of integrator circuits, the designed filter has improved noise characteristics and wide dynamic range since even-order harmonics are cancelled and the input signal range is doubled. Using complementary current mirrors, bias circuits are simplified and the cutoff frequency of filters can be controlled easily by a single DC bias current. As a design example, the 3rd-order lowpass Butterworth filter with a leapfrog realization is designed. The designed fully-balanced current-mode filter is simulated and examined by SPICE using 0.65${\mu}{\textrm}{m}$ CMOS n-well process parameters. The simulation results show 50MHz cutoff frequency, 69㏈ dynamic range with 1% total harmonic distortion(THD), and 4㎽ power dissipation with a 3V supply voltage.
신축성 유기발광다이오드를 위한 은 나노와이어 기반의 신축성 투명 전극 기판 연구
정현수,고혁,박계춘,윤창훈,Jung, Hyunsu,Go, Hyeck,Park, Gye-Choon,Yun, Changhun 한국전기전자재료학회 2017 전기전자재료학회논문지 Vol.30 No.10
The proposed stretchable transparent electrodes based on silver nanowires (AgNWs) were prepared on a polyurethane (PU) substrate. In order toavoid the surface roughness caused by the silver nanowires, a titanium oxide ($TiO_2$) buffer layer was addedby coating and heating the organometallic sol-gel solution. The fabricated stretchable electrodes showedan electrical sheet resistance of $24{\Omega}sq^{-1}$, 78% transmittance at 550 nm, and an average surface roughness below 5 nm. Furthermore, the AgNW-based electrode maintained its initial electrical resistance under 130% strain testing conditions, without the assistance of additional conductive polymer layers. In this paper, the critical role of the $TiO_2$ buffer layer between the AgNW network and the PU substrate has been discussed.
전자장 해석을 통한 매트릭스형 한류기용 리액터 설계 및 특성해석
정동철(Dong-Chul Chung),윤창훈(Chang-Hun Yun),최효상(Hyo-Sang Choi) 대한전기학회 2009 전기학회논문지 P Vol.58 No.2
In this paper, we performed the optimum design of reactors for matrix-type superconducting-fault current limiters (SFCLs), using electromagnetic analysis tools. We decided a optimun position within a reactor for superconducting elements of current-limiting parts and trigger parts from the calculation of magnetic flux internsity for reactor structures. Also we decided effective distance length between two reactors through the analysis of the distribution of magnetic field, according to distance lengths between them. We designed and characterized matrix-type SFCLs, based on our optimum design of a reactor. We confirmed uniform distribution of a fault current, resulted from the improvement of simultaneous quench characteristics within our matrix-type SFCL.