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Cu도핑이 CdS / CdTe 태양전지의 후면전극의 거동에 미치는 영향
안호균(Hokyun Ahn),윤세왕(Sewang Yoon),김동환(Donghwan Kim) 한국태양에너지학회 2000 한국태양에너지학회 학술대회논문집 Vol.- No.-
CdTe 태양전지에 Cu로 도핑된 carbon paste를 배면전극으로 사용했을 때의 전지 성능과 photoluminescence (PL) 특성을 고찰하였다. 배면전극으로는 CuCl₂가 첨가된 Cu-doped carbon paste와 진공증착된 Cu/Au가 사용되었다. Cu로 도핑된 배면전극의 최적 열처리조건은 120℃에서 30분이었으며, PL로 부터 defect band의 감소를 확인하였다. 열처리 온도를 300℃ 이상 증가시키면 defect band는 더 크게 감소하였는데, 전지의 성능은 저하되었다. CuCl₂로 도핑된 CdTe에서는 donor-acceptor pair(DAP) transition(1.55ev)이 관찰되지 않았으나, AgNO₃로 Cl을 제거한 경우에는 DAP transition이 관찰되어졌다. Cl을 제거한 경우 전극과 CdTe사이의 접착상태가 불량하였으며, 따라서 전지의 성능이 저하되었다. CuCl₂ 첨가시 열처리 온도를 낮추어서 CdTe 표면에 도핑하는 것이 중요하며, Cl이 전지의 전기적, 광학적 거동에 영향을 미친다는 것을 PL을 통해 확인하였다.
후면 형상에 따른 결정질 실리콘 태양전지의 후면전계 형성 및 특성
김현호,김성탁,박성은,송주용,김영도,탁성주,권순우,윤세왕,손창식,김동환,Kim, Hyun-Ho,Kim, Seong-Tak,Park, Sung-Eun,Song, Joo-Yong,Kim, Young-Do,Tark, Sung-Ju,Kwon, Soon-Woo,Yoon, Se-Wang,Son, Chang-Sik,Kim, Dong-Hwan 한국재료학회 2011 한국재료학회지 Vol.21 No.5
To reduce manufacturing costs of crystalline silicon solar cells, silicon wafers have become thinner. In relation to this, the properties of the aluminium-back surface field (Al-BSF) are considered an important factor in solar cell performance. Generally, screen-printing and a rapid thermal process (RTP) are utilized together to form the Al-BSF. This study evaluates Al-BSF formation on a (111) textured back surface compared with a (100) flat back surface with variation of ramp up rates from 18 to $89^{\circ}C$/s for the RTP annealing conditions. To make different back surface morphologies, one side texturing using a silicon nitride film and double side texturing were carried out. After aluminium screen-printing, Al-BSF formed according to the RTP annealing conditions. A metal etching process in hydrochloric acid solution was carried out to assess the quality of Al-BSF. Saturation currents were calculated by using quasi-steady-state photoconductance. The surface morphologies observed by scanning electron microscopy and a non-contacting optical profiler. Also, sheet resistances and bulk carrier concentration were measured by a 4-point probe and hall measurement system. From the results, a faster ramp up during Al-BSF formation yielded better quality than a slower ramp up process due to temperature uniformity of silicon and the aluminium surface. Also, in the Al-BSF formation process, the (111) textured back surface is significantly affected by the ramp up rates compared with the (100) flat back surface.
태양전지용 실리콘 기판의 절삭손상 식각 조건에 의한 곡강도 변화
강병준,박성은,이승훈,김현호,신봉걸,권순우,변재원,윤세왕,김동환,Kang, Byung-Jun,Park, Sung-Eun,Lee, Seung-Hun,Kim, Hyun-Ho,Shin, Bong-Gul,Kwon, Soon-Woo,Byeon, Jai-Won,Yoon, Se-Wang,Kim, Dong-Hwan 한국재료학회 2010 한국재료학회지 Vol.20 No.11
We have studied methods to save Si source during the fabrication process of crystalline Si solar cells. One way is to use a thin silicon wafer substrate. As the thickness of the wafers is reduced, mechanical fractures of the substrate increase with the mechanical handling of the thin wafers. It is expected that the mechanical fractures lead to a dropping of yield in the solar cell process. In this study, the mechanical properties of 220-micrometer-solar grade Cz p-type monocrystalline Si wafers were investigated by varying saw-damage etching conditions in order to improve the flexural strength of ultra-thin monocrystalline Si solar cells. Potassium hydroxide (KOH) solution and tetramethyl ammonium hydroxide (TMAH) solution were used as etching solutions. Etching processes were operated with a varying of the ratio of KOH and TMAH solutions in different temperature conditions. After saw-damage etching, wafers were cleaned with a modified RCA cleaning method for ten minutes. Each sample was divided into 42 pieces using an automatic dicing saw machine. The surface morphologies were investigated by scanning electron microscopy and 3D optical microscopy. The thickness distribution was measured by micrometer. The strength distribution was measured with a 4-point-bending tester. As a result, TMAH solution at $90^{\circ}C$ showed the best performance for flexural strength.
결정질 실리콘 태양전지용 실리콘 기판의 표면 미세구조에 따른 곡강도 특성
이준성,권순우,박하영,김영도,김형준,임희진,윤세왕,김동환,Lee, Joon-Sung,Kwon, Soon-Woo,Park, Ha-Young,Kim, Young-Do,Kim, Hyeong-Jun,Lim, Hee-Jin,Yoon, Se-Wang,Kim, Dong-Hwan 한국재료학회 2009 한국재료학회지 Vol.19 No.1
The influence of various surface morphologies on the mechanical strength of silicon substrates was investigated in this study. The yield for the solar cell industry is mainly related to the fracturing of silicon wafers during the manufacturing process. The flexural strengths of silicon substrates were influenced by the density of the pyramids as well as by the size and the rounded surface of the pyramids. To characterize and optimize the relevant texturing process in terms of mechanical stability and the fabrication yield, the mechanical properties of textured silicon substrates were investigated to optimize the size and morphology of random pyramids. Several types of silicon substrates were studied, including the planar type, a textured surface with large and small pyramids, and a textured surface with rounded pyramids. The surface morphology and a cross-section of the as-textured and fractured silicon substrates were investigated by scanning electron microscopy.
권영희(Younghee Kwon),김진형(Jin-Hyung Kim),윤수영(Su-Young Yun),윤세왕(Se-Wang Yoon) 한국정보과학회 2002 한국정보과학회 학술발표논문집 Vol.29 No.1B
본 연구에서는 식품 안전성을 검사하기 위해 식품 내 미생물 농도를 계산하는 방법을 제안한다. 기존의 생물학적 방법을 보완하여 영상 분석에 기반한 자동화 방법으로 빠르고 보다 정확한 방법을 제안한다. 현미경으로 확대한 시료의 영상을 자동으로 분석하여 영상 내의 미생물의 수를 측정하면 여러 영상에 대한 결과를 통계적으로 분석하여 식품 내 미생물 농도를 보다 정확히 측정할 수 있다. 영상 처리 과정을 통해 영상으로부터 미생물군을 찾아내고, 해당 미생물군을 모양에 따라 세 가지 종류-간균, 구균, 효모로 분류하고 계수한다. 제안하는 시스템의 성능을 실험으로 보였다. 영상 내에서 측정된 미생물의 수와 실제 미생물의 수의 비를 검토해 본 바, 본 시스템이 실용적임을 보였다.
염기용액을 이용한 태양전지용 실리콘 기판의 절삭손상층 식각 특성
권순우(Kwon, Soon-Woo),이종협(Yi, Jong-Heop),윤세왕(Yoon, Se-Wang),김동환(Kim, Dong-Hwan) 한국신재생에너지학회 2009 신재생에너지 Vol.5 No.1
The surface etching characteristics of single crystalline silicon wafer were investigated using potassium hydroxide (KOH) and tetramethylammonium hydroxide (TMAH). The saw damage layer was removed after 10min by KOH 45wt% solution at 80?C. The wafer etched at high temperature (90?C) and in low concentration (4wt%) of TMAH solution showed an increased etch rate of silicon wafer and wavy patterns on the surface. Especially, pyramidal textures were formed in 4wt% TMAH solution without alcohol additives.