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AlGaAs / InGaAs / GaAs Pseudomorphic 구조의 MOCVD 성장 및 2차원 전자가스의 전송특성
양계모(Gye Mo Yang),서광석(Kwang Seok Seo),최병두(Byung-Doo Choe) 한국진공학회(ASCT) 1993 Applied Science and Convergence Technology Vol.2 No.4
대기압 MOCVD(metalorganic chemical vapor deposition) 방법으로 AlGaAs/InGaAs/GaAs pseudomorphic 구조를 성장하였다. 650℃에서 AlGaAs와 InGaAs를 성장할 때 각각에서 Al과 In의 유입효율은 조성비에 관계없이 일정하였다. 그러나 Al은 Ga보다 약간 큰 유입효율을, In은 Ga보다 다소 작은 유입효율을 보였다. InGaAs/GaAs strain QW(quantum well)을 성장하여 광학적 성질을 알아보았으며, 델타도핑을 이용한 Al_(0.24)Ga_(0.76)As/In_(0.16)Ga_(0.84)As p-HEMT(pseudomorphic high electron mobility transistor) 구조를 성공적으로 성장하여 Hall 효과와 Shubnikov-de Haas(SdH) 측정 등을 통하여 전기적인 특성을 연구하였다. 자기저항의 SdH 진동과 양자 Hall 저항의 편평대가 확실히 관찰되었으며, 이로부터 이차원 전자가스의 존재와 buffer층을 통한 parallel conduction이 있음을 확인하였다. Buffer층에 p형 GaAs를 삽입한 구조로 만든 1.5 ㎛ 게이트 길이를 가진 p-HEMT는 200mS/㎜의 transconductance와 좋은 pinch-off 특성을 보였다. AlGaAs/InGaAs/GaAs pseudomorphic structures have been grown by atmospheric pressure-MOCVD. The Al incorporation efficiency is constant but slightly exceeds the Ga incorporation during the growth of AlGaAs layers at 650℃. Meanwhile, the In incorporation efficiency is constant but slightly less than the Ga incorporation in InGaAs layers. InGaAs/GaAs QWs were grown and their optical properties were characterized. δ-doped Al_(0.24)Ga_(0.76)As/In_(0.16)Ga_(0.84)As p-HEMT structures were successfully grown by MOCVD and their transport properties were characterized by Hall effect and SdH measurements. SdH measurements at 3.7K show clear magnetoresistance oscillations and plateaus in the quantum Hall effect confirming the existence of a two-dimensional electron gas (2DEG) and a parallel conduction through the GaAs buffer layer. The fabricated 1.5 ㎛ gatelength p-HEMTs having p-type GaAs in the buffer layer show a high transconductance of 200mS/㎜ and a good pinch-off characteristics.
김태기,양계모,Jeong Kwon Son,양성석,Young Gyu Hong 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.50 No.3
We have grown GaN films with a thickness of about 1.2 $\mu$m on Si (111) substrates by using metalorganic chemical vapor deposition and a AlN/GaN superlattice. In order to optimize the pair number of the AlN/GaN superlattice, we have grown GaN films on Si (111) substrates having various pair numbers of the AlN/GaN superlattices. When the pair number of the AlN/GaN superlattices is 15 pairs, no cracks are observed in the GaN film grown on Si (111), and the GaN film shows the best surface and crystal quality. Also, the GaN micro-cavity structure with SiO$_2$/ZrO$_2$ dielectric-distributed Bragg reflectors as both cavity mirrors has been fabricated by means of transferring a InGaN/GaN multiple quantum well structure from the Si (111) substrate onto a sapphire carrier and wet-chemical etching of the Si substrate. Dips in the reflectivity spectrum of the fabricated micro-cavity structure have been observed at wavelengths of 405 nm 433 nm, indicating the resonance mode of the cavity.