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안티모니 셀레나이드 태양전지의 연구 개발 동향: 에너지 밴드 정렬 최적화
신병하,지승환,Wang Yazi 한국태양광발전학회 2023 한국태양광발전학회지 Vol.9 No.2
지구상에 풍부하며 저독성 소재인 안티모니 셀레나이드(Sb2Se3)는 재료가 갖는 우수한 광전자적 특성과 장기 내구성으로 차세대 태양전지 소자로 크게 주목 받고 있다. 또한, 비교적 짧은 연구기간 동안 빠른 성장 속도를 보여줬으며, 2014년 2.26%에서 8년의 연구기간 동안 약 5배인 2022년 10.57%를 달성하였다. 하지만, 여전히 기존의 칼코지나이드계 박막 태양전지인 CdTe(22.1%) 및 Cu(In,Ga)Se₂(23.35%)가 달성한 효율에 비해 낮은 변환 효율을 보이고 있으며, 이는 계면에서 발생하는 캐리어 재결합으로 인한 개방전압 손실 문제가 주 원인으로 대두되고 있다. 따라서, Sb₂Se₃ 광 흡수층에 인접한 전자 및 정공 수송층 사이에 적절한 밴드 정렬을 구축하여 캐리어 재결합 손실을 줄이는 것이 고효율 Sb₂Se3 태양전지를 구현하기 위한 핵심 전략 중 하나이다. 본 원고에서는 Sb₂Se₃ 광 흡수층의 기본적인 특성과 Sb₂Se₃ 태양전지의 최근 연구 성과에 대해 간략하게 설명하고자 하며, 특히 전자 및 정공 수송층 적용을 통한 에너지 밴드 정렬 최적화에 관련된 내용을 중점적으로 소개하고자 한다. 또한, Sb₂Se₃ 박막 태양전지 성능의 병목 현상을 극복하기 위한 잠재적인 연구 방향에 대해서도 논하고자 한다.
Opportunities and challenges of perovskite photovoltaics
신병하 한국공업화학회 2020 한국공업화학회 연구논문 초록집 Vol.2020 No.-
Organometal halide perovskite has been garnering intense attention due to its fast progress in achieving high performance solar cells - from a few % to over 25% of power - at a pace that is unprecedented in any other PV technologies. The perovskite technology is also favorable for large-scale production, potentially towards Terawatt-scale, with low capital expenses because the material is printable. Additionally, the perovskite is an ideal candidate for a top cell of tandem devices with Si and Cu(In,Ga)Se2, the currently most successful PV technologies in the market. However, there are several key challenges that need to be overcome before the perovskite PV technology can become commercially viable for large deployment. The challenges are: insufficient level of understanding of fundamental materials properties; poor long-term ambient stability; development of film preparation methods for large-scaling; widening the bandgap of perovskite for tandem applications without performance loss.
Mechanisms of improved performance of Cu(In,Ga)Se2 solar cells by Cesium post-deposition treatments
정기욱,신병하 한국공업화학회 2019 한국공업화학회 연구논문 초록집 Vol.2019 No.1
Heavy-alkali post-deposition treatments (PDTs) utilizing Cs has become an indispensable step in producing high performance Cu(In,Ga)Se2 (CIGS) solar cells. Here, we present an extensive study on the effects of CsF-PDT on material properties of CIGS absorbers and the performance of the final solar devices. Incorporation of an optimized amount of Cs into CIGS resulted in a significant improvement of the device efficiency up to 18.4%. Strong segregation of Cs at the front and rear interfaces as well as along grain boundaries of CIGS was observed via high resolution chemical analysis such as atomic probe tomography. Study of defect chemistry using photoluminescence and capacitance-based measurements revealed that both deep-level donor-like defects and deep-level acceptor-like defects are passivated by CsF-PDT. Additionally, it was found that CsF-PDT induces a slight change in the energetics of VCu, the most dominant point defect that is responsible for the p-type conductivity of CIGS.
Strategies to Reduce the Open-Circuit Voltage Deficit in Cu2ZnSn(S,Se)4 Thin Film Solar Cells
김제경,신병하 대한금속·재료학회 2017 ELECTRONIC MATERIALS LETTERS Vol.13 No.5
Cu2ZnSn(S,Se)4 thin film solar cell has attracted significant attention inthin film solar cell technologies considering its low-cost, non-toxicity, andearth-abundance. However, the highest efficiency still remains at 12.6%,far below the theoretical efficiency of Shockley-Queisser (SQ) limit ofaround 30%. The limitation behind such shortcoming in the deviceperformance was reported to stem primarily from a high Voc deficitcompared to other thin film solar cell technologies such as CdTe orCu(In,Ga)Se2 (CIGS), whose origins are attributed to the prevalence ofband tailing from cation disordering as well as to the high recombinationat the interfaces. In this report, systematic studies on the causes of a highVoc deficit and associated remarkable approaches to achieve high Voc havebeen reviewed, provided with a guidance on the future direction ofCZTSSe research in resolving the high Voc deficit issue.
Byungho Lee,신병하,Byungwoo Park 대한금속·재료학회 2019 ELECTRONIC MATERIALS LETTERS Vol.15 No.2
Herein, we synthesized uniform Cs 2 SnI 6 fi lms by two kinds of hybrid deposition methods by considering volume expansioninvolved during phase transformations. First, oblique thermal evaporation for CsI followed by SnI 4 spin-coating resultedin uniform Cs 2 SnI 6 fi lms free of impurity phases. The rapid expansion (within 10 s of spin-coating) from CsI to Cs 2 SnI 6( ΔV = 106%) was accommodated by porous CsI fi lms inhibiting crack formation. Excess S nI4 on the C s 2S nI6 after spincoatingwas eff ectively removed by toluene washing without any damages to Cs 2 SnI 6 , and optimum deposition parameterswere suggested in terms of carrier mobility. Second, annealing CsI with SnI 4 vapor at 250 °C and post-annealing in the SnI 4and I 2 vapor at 300 °C produced Cs 2 SnI 6 fi lm with complete coverage. The slow reaction (70 min for a complete conversion)provided suffi cient time for complete diff usion of SnI 4 into CsI without crack formation even with compact CsI. Thenonradiative recombination path in Cs 2 SnI 6 was suppressed by post-annealing in the SnI 4 - and I 2 -atmosphere, as confi rmedfrom the enhanced photoluminescence.
Synthesis of Caesium Bismuth Bromide Perovskite Nanocrystals for Blue Light Emitting
박진우,김준연,신병하 한국공업화학회 2019 한국공업화학회 연구논문 초록집 Vol.2019 No.1
Due to extremely narrow emission spectrum (full width half maximum (FWHM) ~20nm), i.e., high color purity, lead halide perovskite has emerged as a strong candidate for next-generation light emitting diodes (LEDs). However, the presence of a toxic element, lead, is one of the greatest huddle for the commercialization of the technique. Here, we present the synthesis of an inorganic lead-free halide perovskite, Cs3Bi2Br9 in the form of nanocrystal of size ~14nm via ligand assisted re-precipitate method. We demonstrate improved optical properties of Cs3Bi2Br9 nanocrystals by doping with FeCl3 and MACl - almost 300% increase in photoluminescence (PL) intensity was observed without impacting FWHM. The best results were photoluminescence quantum yield (PLQY) of 15% with FWHM of 57.2nm at PL peak position of 407nm. The details of synthesis and doping procedures will be presented.
김제경,장유성,최지운,신병하 한국공업화학회 2020 한국공업화학회 연구논문 초록집 Vol.2020 No.-
Binary Sb<sub>2</sub>Se<sub>3</sub> thin film has posed significant interests as a promising solar cell material due to its relative earth-abundance, an appropriate band gap of 1.1-1.2eV, and a high absorption coefficient around 10<sup>5</sup> cm<sup>-1</sup> at a visible range. With a rapid increase in the efficiencies since 2014, a record power conversion efficiency of 9.2% has been reported in 2019. One of the critical drawbacks in Sb<sub>2</sub>Se<sub>3</sub> thin films is the high vapor pressure of Sb<sub>2</sub>Se<sub>3</sub> which can result in the decomposition of Sb<sub>2</sub>Se<sub>3</sub> during evaporation. The density functional theory suggested that it leads to the facile formation of VSe which decreases the p-type conductivity. Therefore, we evaporated Sb<sub>2</sub>Se<sub>3</sub> with additional Se to suppress the formation of VSe. Using vapor transport deposition technique, we fabricated highly [hk1]-orientated Sb<sub>2</sub>Se<sub>3</sub> solar cells with improved open-circuit voltage. We also studied the device performance of Sb<sub>2</sub>Se<sub>3</sub> solar cells in relation with their morphology and crystalline orientations.