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장유성,이무열,김보경 국제물리치료연구학회 2025 Journal of International Academy of Physical Ther Vol.16 No.1
Background: Neck discomfort and movement limitations are common musculoskeletal problems among modern people. While cervical and thoracic joint mobilization are widely used interventions for cervical dysfunction, research comparing their immediate effectiveness in adults with asymmetrical cervical rotation is limited. Objectives: To compare the immediate effects of cervical versus thoracic joint mobilization in adults with adults with asymmetrical cervical rotation and discomfort. Design: Randomized controlled trial. Methods: Thirty adults with left-right differences in cervical rotation of more than 5 degrees were randomly assigned to a cervical mobilization group (CMG, n=15) or thoracic mobilization group (TMG, n=15). Both groups received Grade III mobilization for 15 minutes. Range of motion (ROM), pain (VAS), and neck disability index (NDI) were measured before and after intervention. Results: Both groups showed significant increases in ROM after intervention (P<.001). Within-group analysis revealed that the TMG showed significant pain reduction (P<.01) and significant reduction in left-right rotation asymmetry (P<.001), while the CMG showed improvement in ROM but no significant changes in asymmetry or pain (P>.05). Neither group showed significant changes in NDI. Between-group comparisons showed no significant differences in any outcome measures. Conclusion: Both cervical and thoracic joint mobilization increased cervical range of motion in adults with asymmetrical cervical rotation discomfort. The TMG demonstrated significant within-group improvements in left-right rotation asymmetry and pain reduction, suggesting potential clinical benefits of thoracic mobilization for certain aspects of cervical dysfunction.
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알루미늄 도핑된 하프늄 산화물과 비정질 InGaZnO를 이용한 강유전성 MFSM 캐패시터
장유성(Yuseong Jang),이수연(Soo-Yeon Lee) 대한전기학회 2021 대한전기학회 학술대회 논문집 Vol.2021 No.10
강유전체 특성 발현을 위해서는, HfO₂ 박막 상부 물질로 금속 화합물 TiN 전극을 사용하거나, Zr 원소를 도핑하는 것이 일반적이었다. 본 연구에서는 Al 원소를 도핑한 HfO₂ 박막과 비정질 산화물 반도체 InGaZnO (IGZO)를 이용한 metal-ferroelectric-semiconductor -metal (MFSM) 캐패시터 구조를 최초로 제작하여 잔여 분극 7.7 µC/cm²을 달성하였다. 본 연구를 통해 강유전체 기반 산화물 반도체 박막 트랜지스터 후속 연구에 큰 기여를 할 것으로 기대된다.
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