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신동식(Dong-Sig Shin),서정(Jeong Suh),조용권(Yong-Kwon Cho),이내응(Nae-Eung Lee) 한국레이저가공학회 2011 한국레이저가공학회지 Vol.14 No.4
The advantage of using lasers for through silicon via (TSV) drilling is that they allow higher flexibility during manufacturing because vacuums, lithography, and masks are not required; furthermore, the lasers can be applied to metal and dielectric layers other than silicon. However, conventional nanosecond lasers have disadvantages including that they can cause heat affection around the target area. In contrast, the use of a picosecond laser enables the precise generation of TSVs with a smaller heat affected zone. In this study, a comparison of the thermal and crystallographic defect around laser-drilled holes when using a picosecond laser beam with varing a fluence and repetition rate was conducted. Notably, the higher fluence and repetition rate picosecond laser process increased the experimentally recast layer, surface debris, and dislocation around the hole better than the high fluence and repetition rate. These findings suggest that even the picosecond laser has a heat accumulation effect under high fluence and short pulse interval conditions. To eliminate these defects under the high speed process, the CDE (chemical downstream etching) process was employed and it can prove the possibility to applicate to the TSV industry.
Dielectric 마스크 적용 UV 레이저 프로젝션 가공을 이용한 빌드업 필름 내 선폭 10μm급 패턴 가공 연구
손현기,박종식,정수정,신동식,최지연,Sohn, Hyonkee,Park, Jong-Sig,Jeong, Su-Jeong,Shin, Dong-Sig,Choi, Jiyeon 한국레이저가공학회 2013 한국레이저가공학회지 Vol.16 No.3
To engrave high-density circuit-line patterns in IC substrates, we applied a projection ablation technique in which a dielectric ($ZrO_2/SiO_2$) mask, a DPSS UV laser instead of an excimer laser, a refractive beam shaping optics and a galvo scanner are used. The line/space dimension of line patterns of the dielectric mask is $10{\mu}m/10{\mu}m$. Using a ${\pi}$ -shaper and a square aperture, the Gaussian beam from the laser is shaped into a square flap-top beam; and a telecentric f-${\theta}$ lens focuses it to a $115{\mu}m{\times}105{\mu}m$ flat-top beam on the mask. The galvo scanner before the f-${\theta}$ lens moves the beam across the scan area of $40mm{\times}40mm$. An 1:1 projection lens was used. Experiments showed that the widths of the engraved patterns in a buildup film ranges from $8.1{\mu}m$ to $10.2{\mu}m$ and the depths from $8.8{\mu}m$ to $11.7{\mu}m$. Results indicates that it is required to increase the projection ratio to enhance profiles of the engraved patterns.
빌드업 필름의 선폭 6㎛급 패턴 가공을 위한 직접식 UV 레이저 프로젝션 애블레이션
손현기,박종식,정수정,신동식,최지연,Sohn, Hyonkee,Park, Jong-Sig,Jeong, Jeong-Su,Shin, Dong-Sig,Choi, Jiyeon 한국레이저가공학회 2014 한국레이저가공학회지 Vol.17 No.3
To directly engrave circuit-line patterns as wide as $6{\mu}m$ in a buildup film to be used as an IC substrate, we applied a projection ablation technique in which an 8 inch dielectric ($ZrO_2/SiO_2$) mask, a DPSS 355nm laser instead of an excimer laser, a ${\pi}$-shaper and a galvo scanner are used. With the ${\pi}$-shaper and a square aperture, the Gaussian beam from the laser is shaped into a square flap-top beam. The galvo scanner before the $f-{\theta}$ lens moves the flat-top beam ($115{\mu}m{\times}105{\mu}m$) across the 8 inch dielectric mask whose patterned area is $120mm{\times}120mm$. Based on the results of the previous research by the authors, the projection ratio was set at 3:1. Experiments showed that the average width and depth of the engraved patterns are $5.41{\mu}m$ and $7.30{\mu}m$, respectively.
UV 레이저 응용 반도체 기판용 임베디드 회로 패턴 가공
손현기(Hyonkee Sohn),신동식(Dong-sig Shin),최지연(Jiyeon Choi) 한국레이저가공학회 2011 한국레이저가공학회지 Vol.14 No.1
Semiconductor industry demands decrease in line/space dimensions of IC substrates. Particularly for IC substrates for CPU, line/space dimensions below 10μm/10μm are expected to be used in production since 2014. Conventional production technologies (SAP, etc.) based on photolithography are widely agreed to be reaching capability limits. To address this limitation, the embedded circuit fabrication technology using laser ablation has been recently developed. In this paper, we used a nanosecond UV laser and a picosecond UV laser to fabricate embedded circuit patterns into a buildup film with SiO2 powders for IC substrate. We conducted SEM and EDS analysis to investigate surface quality of the embedded circuit patterns. Experimental results showed that due to higher recoil pressure, picosecond UV laser ablation of the buildup film generated a better surface roughness.