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송복식,최영복,한성준,문동찬,김선태 한국전기전자재료학회 1995 電氣電子材料學會誌 Vol.8 No.4
A n-CdS thin films were evaporated by thermal evaporation method and their structure, optical transmission spectra and electrical characteristics were investigated. The photovoltaic characteristics of solar cells which were fabricated in optimum conditions measured. The evaporated CdS thin films showed in hexagonal structure and above 80% of optical transmission spectra regardless of impurity doping. The high quality thin films could be obtained at 150.deg. C temperature of substrate, which is useful for solar cell window layer with low resistivity of 6*10$\^$-2/(.ohm.-cm) by In doping We measured the electrical and optical characteristics of the n-CdS/p-InP heterojunction solar cells. The most efficient photovoltaic characteristics of heterojunction solar cells had the open circuit voltage of 0.66V, short circuit current density of 13.85mA/cm$\^$2/, fill factor of 0.576 and conversion efficiency of 8.78% under 60mW/cm$\^$2/ illumination.
송복식,정성훈,문동찬,김선태 한국전기전자재료학회 1995 電氣電子材料學會誌 Vol.8 No.3
The InP crystals have been grown by modified synthesis solute diffusion (SSD) method and its properties have been investigated. The crystals have been grown by lowering the crucible quartz for growth in the furnace and crystal growth rate is 1.8mm/day. The lattice constant a. of the grown crystals is 5.867.angs.. Etch pits density along growth direction of crystal changes from 3.0*10.sup 3/cm$\^$-2/ of first freeze part to 6.7*10$\^$4/cm$\^$-2/ of last freeze part and the radial direction of wafer shows nearly uniform distribution. The resistivity and the carrier concentration of the grown crystals are 1.43*10$\^$-1/.ohm.-cm, 7.7*10$\^$15/cm$\^$-3/ at room temperature, respectively. In the photolurninescence at 10K, the radiation transitions are observed by the near band edge recombination, a pair recombination due to Si donor - Zn acceptor and its phonon replica in the InP. The activation energy by Zn diffusion in undoped n-InP crystals is 1.22eV.
송복식,문동찬 광운대학교 신기술연구소 1997 신기술연구소논문집 Vol.26 No.-
직접천이형 에너지갭(0.17eV)을 갖는 III-V족 2원 화합물 반도체인 InSb를 수직 브리지만법으로 성장시켜 전기-자기적 특성과 Zn의 확산성질을 조사하였다. 결정 성장속도는 1mm/hr 였으며, 성장된 결정의 격자상수 ao는 6.4863A 이었다. 불순물을 첨가하지 않은 InSb 결정의 전도형은 n형이었고, 실온에서 캐리어 농도는 2∼6×10^16㎝^-3 이었으며 캐리어 이동도는 6∼2×10^4㎝^2/V·sec 이었다. 자계를 인가하지 않았을때에 비하여 자기저항은 71.4% 증가하였고 자계가 증가할수록 자기저항은 증가하였다. 또한, 홀전압은 자계의 세기가 증가할수록 증가하였으며 10K gauss에서 36.3mV이었다. InSb 내에서 Zn의 확산깊이는 확산시간의 제곱근에 비례하여 증가하였으며, Zn가 확산하는데 필요한 활성화에너지는 0.67eV이었고 확산계수의 온도의존성은 D=4.25×10^-3 exp(-0.67 /K_BT) 이었다. Binary compound semiconductor InSb crystal which has direct-transition energy gap (0.17eV) was grown by vertical Bridgman method, then the electric-magnetic and Zn diffusion properties of InSb crystal were surveyed. The growth rate of the crystals was 1mm/hr and the lattice constant a_0 of the grown crystal was 6.4863Å. The undoped InSb crystal was n-type, the electron concentration and the electron mobility were 2~6×10^16㎝^-3 and 6~2×10^4㎝^2/V·sec at room temperature, respectively. The magnetoresistance was increased 71.4% as compared with non-applied magnetic field and the magnetoresistance was increased with increasing the magnetic field. Also, the Hall voltage was increased with increasing the magnetic field and Hall voltage was 36.3mV at 10K gauss. The diffusion depth of Zn into InSb proportionally increased with the square root of diffusion time and the activation energy for Zn diffusion was 0.67eV. The temperature dependence of diffusion coefficient was D=4.25×10^-3exp(-0.67 /K_BT).
정성훈,송복식,문동찬,김선태 한국전기전자재료학회 1996 電氣電子材料學會誌 Vol.9 No.10
The annealing effects of Au/Te/Au/n-GaAs structure was investigated by using x-ray diffraction, scanning electron microscope, the specific contact resistance and I-V measurement. Increasing the annealing temperature, the intensity of Au-Ga peak by X-ray diffraction was increased. The Ga$\_$2/Te$\_$3/peak got evident for the samples annealed at 400.deg. C and GaAs peak by recrystallization appeared for the samples annealed at 500.deg. C. The variation from the schottky to low resistance contact was confirmed by I-V curve. The lowest value of the specific contact resistance of the samples annealed at 500.deg. C was 3.8*10$\^$-5/.ohm.-cm$\^$2/ but the value increased above 600.deg. C.