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인두신경증 환자에서 Esophageal manometry와 24hour double prove pH metry 검사 및 위식도 역류와의 관계
김선태 대한기관식도과학회 1996 大韓氣管食道科學會誌 Vol.2 No.1
In recently the gastroesophageal reflux disease(GERD) has been known to induce the otolaryngologic manifestations. Pharyngeal neurosis is a disease which we could have not found the cause frequently. So we have studied the relation between the pharyngeal neurosis and the GERD among 50 patients who were diagnosed as pharyngeal neurosis after esophagogram and laryngoscopic examination. We performed esophageal manometry and 24hour double-probe pH-metry and then compared with normal control group(n=30). The results are as follows 1 Among 50 patients, 12(24%) patients were diagnosed as GERD by DeMeester scoring. 2. In esophageal manometry, the upper and lower esophageal sphincter between the patients and the control group have no significant difference(p>0.05) and 9 among 50 pateints showed abnormal peristaltic movement in esophageal body contraction. 3. In 24hour double-probe pH-metry, the esophageal probe showed that in GERD group(n= 12) the number of reflux episode, episodes greater than 5 minutes and the percentage of time<pH4, the longest reflux time were all significantly increased compared with non GERD or control group(p<0.05). But the pharyngeal probe showed that in GERD group(n= 12) the percentage of time pH<4, total reflux episode number were significantly increased than control group(p<0.05) especially in upright position than supine position. 4. Among 12 GERD patients, 5 patients showed that the pharyngeal pH dropped below pH4 following the esophgeal pH dropped pH<4. We found that the pharyngeal neurosis may partly from the laryngopharyngeal symptom from the gastroesophageal reflux and we need more data and investigate the other laryngopharyngeal reflux disease by using 24hour double-probe pH-metry.
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김선태,문동찬 한국전기전자재료학회 1995 전기전자재료학회지 Vol.8 No.3
We report the properties of optically pumped stimulated emission at room temperature (RT) from column-III nitride semiconductors of GaN, AlGaN/GaN double heterostructure (DH) and AlGaN/GaInN DH which prepared on a sapphire substrate using an AIN buffer-layer by the nietalorganic vapor phase epitaxy (MOVPE) method. The peak wavelength of the stimulated emission at RT from AIGaN/GaN DH is 369nm and the threshold of excitation pumping power density (P$\_$th/) is about 84kW/cm$\^$2/, and they from AlGaN/GaInN DH are 402nm and 130kW/cm$\^$2/ at the pumping power density of 200kW/cm$\^$2/, respectively. The P$\_$th/ of AIGaN/GaN and AlGaN/GaInN DHs are lower than the single layers of GaN and GaInN due to optical confinement within the active layers of GaN and GaInN, respectively.
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김선태,문동찬 한국전기전자재료학회 1994 전기전자재료학회지 Vol.7 No.4
In this study, ln$_{1-x}$ Ga$_{x}$P alloy crystal which has different compositions were grown by the temperature gradient solution(TGS) method, and the properties of deep levels were measured in the temperature range of 9OK-450K. We find the four deep levels of E$_{1}$, E$_{2}$(248meV), E$_{3}$(386meV) and E$_{4}$(618meV) in GaP, which has composition of Ga in In$_{1-x}$ Ga$_{x}$P is one, and the trap densities of E$_{3}$ and E4 levels were 7.5*10$^{14}$ cm$^{-3}$ and 9*10$^{14}$ cm$^{-3}$ , respectively. A broad deep level spectra was revealed in In$_{1-x}$ Ga$_{x}$P whose composition of Ga, x, were 0.56 and 0.83, and the activation energy and trap densities were about 430meV and 6*10$^{14}$ cm$^{-3}$ , respectively.ectively.
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김선태,문동찬 한국전기전자재료학회 1992 전기전자재료학회지 Vol.5 No.3
합성용질확산법으로 GaP단결정을 성장시키고 몇가지 성질을 조사하였다. 정지상태에서 결정의 성장속도는 1.75[mm/day]이었고 결정성장용 석영관을 전기로내에서 하강시키므로써 양질의 GaP 단결정을 성장하였다. 에치피트밀도는 결정의 성장축 방향으로 3.8*$10^{4}$[$cm^{-2}$]부터 2.3*$10^{5}$[$cm^{-2}$] 까지 증가하였다. 성장된 GaP결정의 이동도와 캐리어농도는 실온에서 197.49[$cm^{2}$/V.sec]와 6.75*$10^{15}$[$cm^{-3}$]이었고 77K의 온도에서는 266.91[$cm^{2}$ /V.sec]와 3.13*$10^{14}$[$cm^{-3}$]이었다. 에너지갭의 온도의존성은 실험적으로 $E_{g}$(T)=2.3383-(6.082*$10^{-4}$) $T^{2}$/(373.096+T)[eV]로 구하여졌다. 저온에서 측정된 광루미네센스 스펙트럼은 구속된 여기자의 복사재결합과 재결합 과정에 포논의 참여로 인하여 에너지갭 부근의 복잡한 선 스펙트럼이 나타났고 얕은 준위의 Si도너와 Zn억셉터준위 사이에서의 복사재결합 및 이에 대한 1LO, 2LO의 포논복제가 나타났으며 S $i_{Ga}$ -S $i_{p}$의 쌍방출에 의하여 1.8932[eV]에서 넓은 반치전폭의 피크가 나타났다. GaP의 적외선 흡수는 TO, LO, LA, T $A_{1}$, T $A_{2}$ 포논들의 이중결합모드와 G $a_{2}$O의 진동모드 및 Si도너와 Zn억셉터들에 의하여 일어났다. Zn를 확산시키어 제작한 p-n GaP발광다이오드는 실온에서의 발광중심피크가 6250[.angs.]이었고 최대광출력은 0.0916[mW], 양자효율은 0.51%이었다.이었다.
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