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손창식,Son, Chang-Sik 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.12
We have investigated the optical properties of Erbium (Er)-implanted GaN by photoluminescence (PL). Various doses of Er ion were implanted on GaN epilayers by ion implantation. Visible green emission lines due to inner 4f shell transitions for $Er^{3+}$ were observed from the PL spectrum of Er-implanted GaN. The emission spectrum consists of two narrow green lines at 537 and 558 nm. The green emission lines are identified as $Er^{3+}$ transitions from the $^{5}H_{11/2}$ and $^{4}S_{3/2}$ levels to the $^{4}I_{15/2}$ ground state. The stronger peaks in the case with the dose of $5{\times}10^{14}cm^{-2}$, together with the relatively higher intensity of the $Er^{3+}$ luminescence in the lower doped sample. It implies that some damage remains in the case with the dose of $1{\times}10^{16}cm^{-2}$. The peak positions of emission lines due to inner 4f shell transitions for $Er^{3+}$ do not change with increasing temperature. It indicates that $Er^{3+}$ related emission depends very little on the ambient temperature.
손창식,최인훈,박용주,Son, Chang-Sik,Choi, In-Hoon,Park, Young-Ju 한국재료학회 2003 한국재료학회지 Vol.13 No.11
One-dimensional array of InAs quantum dots (QDs) have been grown on V-grooved GaAs substrates by low-pressure metalorganic chemical vapor deposition. Atomic force microscope images show that InAs QDs are aligned in one-dimensional rows along the [011]oriented bottom of V-grooves and no QDs are formed on the sidewalls and the surface of mesa top. Capability to grow one-dimensional InAs QDs array would feasible for the single electron tunneling devices and other novel quantum-confined devices.
단일 공정에 의한 고효율 단일모드 반도체 레이저 구조 제작을 위한 고밀도 양자 나노구조 형성
손창식,백종협,김성일,박용주,김용태,최훈상,최인훈,Son, Chang-Sik,Baek, Jong-Hyeob,Kim, Seong-Il,Park, Young-Ju,Kim, Yong-Tae,Choi, Hoon-Sang,Choi, In-Hoon 한국재료학회 2003 한국재료학회지 Vol.13 No.8
We have developed a new way of the constant growth technique to maintain a grating height of originally-etched V-groove of submicron gratings up to 1.5 $\mu\textrm{m}$ thickness by a low pressure metalorganic chemical vapor deposition. The constant growth technique is well performed on two kinds of submicron gratings that made by holography and electron (e)-beam lithography GaAs buffer layer grown on thermally deformed submicron gratings has an important role in recovering the deformed grating profile from sinusoidal to V-shaped by reducing mass transport effects. The thermal deformation effect on submicron gratings made by e-beam lithography is less than that on submicron gratings made by holography. The constant growth technique is an important step to realize complex optoelectronic devices such as one-step grown distributed feedback lasers and two-dimensional photonic crystals.
손창식,Son, Chang-Sik 한국재료학회 2003 한국재료학회지 Vol.13 No.11
Heavily $p^{ +}$-typed ($10^{20}$ $cm^{-3}$ ) GaAs epilayers have been grown on high-index GaAs substrates with various crystallographic orientations from (100) to (111)A by a low-pressure metalorganic chemical vapor deposition. Carbon (C) tetrabromide (CBr$_4$) was used as a C source. At moderate growth temperatures and high V/III ratios, the hole concentration of C-doped GaAs epilayers shows the crystallographic orientation dependence. The bonding strength of As sites on a growing surface plays an important role in the C incorporation into the high-index GaAs substrates.
박막 태양전지용 투명 전극을 위한 Ga 도핑된 ZnO의 증착 온도에 따른 구조 및 전기 특성 변화
손창식,Son, Chang-Sik 한국재료학회 2011 한국재료학회지 Vol.21 No.3
We have investigated the structural and optical properties of Ga-doped ZnO (GZO) thin films deposited by RF magnetron sputtering at various deposition temperatures from 100 to $500^{\circ}C$. All the GZO thin films are grown as a hexagonal wurtzite phase with highly c-axis preferred parameter. The structural and electrical properties are strongly related to deposition temperature. The grain size increases with the increasing deposition temperature up to $400^{\circ}C$ and then decreases at $500^{\circ}C$. The dependence of grain size on the deposition temperature results from the variation of thermal activation energy. The resistivity of GZO thin film decreases with the increasing deposition temperature up to $300^{\circ}C$ and then decreases up to $500^{\circ}C$. GZO thin film shows the lowest resistivity of $4.3{\times}10^{-4}\;{\Omega}cm$ and highest electron concentration of $1.0{\times}10^{21}\;cm^{-3}$ at $300^{\circ}C$. The mobility of GZO thin films increases with the increasing deposition temperature up to $400^{\circ}C$ and then decreases at $500^{\circ}C$. GZO thin film shows the highest resistivity of 14.1 $cm^2/Vs$. The transmittance of GZO thin films in the visible range is above 87% at all the deposition temperatures. GZO is a feasible transparent electrode for the application to the transparent electrode of thin film solar cells.
박막 태양전지용 투명 전극을 위한 Ga 도핑된 ZnO의 RF 전력에 따른 구조 및 전기 특성 변화
손창식,Son, Chang-Sik 한국재료학회 2011 한국재료학회지 Vol.21 No.4
We have investigated the structural and electrical properties of Ga-doped ZnO (GZO) thin films deposited by an RF magnetron sputtering at various RF powers from 50 to 90W. All the GZO thin films are grown as a hexagonal wurtzite phase with highly c-axis preferred parameters. The structural and electrical properties are strongly related to the RF power. The grain size increases as the RF power increases since the columnar growth of GZO thin film is enhanced at an elevated RF power. This result means that the crystallinity of GZO is improved as the RF power increases. The resistivity of GZO rapidly decreases as the RF power increases up to 70 W and saturates to 90W. In contrast, the electron concentration of GZO increases as the RF power increases up to 70 W and saturates to 90W. GZO thin film shows the lowest resistivity of $2.2{\times}10^{-4}{\Omega}cm$ and the highest electron concentration of $1.7{\times}10^{21}cm^{-3}$ at 90W. The mobility of GZO increases as the RF power increases since the grain boundary scattering decreases due to the reduced density of the grain boundary at a high RF power. The transmittance of GZO thin films in the visible range is above 90%. GZO is a feasible transparent electrode for application as a transparent electrode for thin film solar cells.
연관 분류 마이닝 기법을 활용한 지식기반 신체활동 평가 모델
손창식,최락현,강원석,Son, Chang-Sik,Choi, Rock-Hyun,Kang, Won-Seok 대한임베디드공학회 2018 대한임베디드공학회논문지 Vol.13 No.4
Recently, as interest of wearable devices has increased, commercially available smart wristbands and applications have been used as a tool for personal healthy management. However most previous studies have focused on evaluating the accuracy and reliability of the technical problems of wearable devices, especially step counts, walking distance, and energy consumption measured from the smart wristbands. In this study, we propose a physical activity evaluation model using classification rules, induced from the associative classification mining approach. These rules associated with five physical activities were generated by considering activities and walking times in target heart rate zones such as 'Out-of Zone', 'Fat Burn Zone', 'Cardio Zone', and 'Peak Zone'. In the experiment, we evaluated the prediction power of classification rules and verified its effectiveness by comparing classification accuracies between the proposed model and support vector machine.
데이터 이산화와 러프 근사화 기술에 기반한 중요 임상검사항목의 추출방법: 담낭 및 담석증 질환의 감별진단에의 응용
손창식,김민수,서석태,조윤경,김윤년,Son, Chang-Sik,Kim, Min-Soo,Seo, Suk-Tae,Cho, Yun-Kyeong,Kim, Yoon-Nyun 대한의용생체공학회 2011 의공학회지 Vol.32 No.2
The selection of meaningful clinical tests and its reference values from a high-dimensional clinical data with imbalanced class distribution, one class is represented by a large number of examples while the other is represented by only a few, is an important issue for differential diagnosis between similar diseases, but difficult. For this purpose, this study introduces methods based on the concepts of both discernibility matrix and function in rough set theory (RST) with two discretization approaches, equal width and frequency discretization. Here these discretization approaches are used to define the reference values for clinical tests, and the discernibility matrix and function are used to extract a subset of significant clinical tests from the translated nominal attribute values. To show its applicability in the differential diagnosis problem, we have applied it to extract the significant clinical tests and its reference values between normal (N = 351) and abnormal group (N = 101) with either cholecystitis or cholelithiasis disease. In addition, we investigated not only the selected significant clinical tests and the variations of its reference values, but also the average predictive accuracies on four evaluation criteria, i.e., accuracy, sensitivity, specificity, and geometric mean, during l0-fold cross validation. From the experimental results, we confirmed that two discretization approaches based rough set approximation methods with relative frequency give better results than those with absolute frequency, in the evaluation criteria (i.e., average geometric mean). Thus it shows that the prediction model using relative frequency can be used effectively in classification and prediction problems of the clinical data with imbalanced class distribution.