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성명모 ( Myung Mo Sung ) 대한금속재료학회 ( 구 대한금속학회 ) 2007 ELECTRONIC MATERIALS LETTERS Vol.3 No.3
Self-assembled monolayers (SAMs) are thin organic films which form spontaneously on solid surfaces. They have been shown to be useful as passivating layers and also for the modification of surface properties. Potential applications include wetting, adhesion, friction, chemical sensing, ultrafine scale lithography, and protection of metals against corrosion. Among these techniques for generating patterned SAMs, microcontact printing is the most practical because it is simple and rugged. This technique has been used to produce substrates for several different applications. Atomic layer deposition (ALD) is a gas-phase thin film deposition method using self-terminating surface reactions. ALD process is very sensitive to the surface conditions of the substrates, it offers an ideal method for selective deposition of thin films on patterned SAMs.
C54구조의 $TiSi_2$와 As 이온 주입된 다결정 Si계에서 고온 열처리에 의한 표면상태 거칠어짐과 TiAs 침전물 형성에 관한 연구
박형호,조경익,이희태,성명모,이상환,권오준,남기수,Park, Hyung-Ho,Cho, Kyoung-Ik,Lee, Hee-Tae,Sung, Myung-Mo,Lee, Sang-Hwan,Kwon, Oh-Joon,Nam, Kee-Soo 대한전자공학회 1990 전자공학회논문지 Vol. No.
비로소 높게 이온주입된 다결정 실리콘에 대한 C54 구조를 갖는 $TiSi_{2}$의 열적 안정성과 $TiSi_{2}{\times}As{\longrightarrow}TiAs{\times}2Si$의 TiAs 석출물 형성반응이 다결정 실리콘 박막의 표면 상태 거칠어짐에 미치는 영향을 살펴보았다. Thermal stability of $TiSi_{2}$ with C54 structure and morphology degradation of poly silicon layer resulted from the formation of TiAs precipitate through the reaction between T>$TiSi_{2}$</TEXT> and arsenic ion implanted in poly silicon have been studied.
Pulling방법을 적용한 I.L.M의 시공방법에 대한 연구
김명식,성명모 釜慶大學校 1996 釜慶大學校 論文集 Vol.1 No.2
While constrction of Gupo Grand Bridge using pulling method of Incremental Launching Method, many problems was caused by the unsymmetry of superstructure on the working way, kink of pulling cable and so on. So, to minimize these problems, this paper was presented following improvemental way by analysing and regulating about the situation the construction was discontinous by structure unsymmetry and kink of cable. 1) Set시 X-bracing device was newly designed to minimize tortional problem occurred from eccentric loading condition. This X-bracing was attached and removed repeatedly according to the pulling condition. 2) To minimize occurrence of eccentric and to control the eccentricity occurred a flat jack was used. 3) Sliding pad size on the temporary bearings was incremented to decrease the loads per unit area and to minimize bad effect due to the eccentric loading. 4) To prevent the kink of the fulling cables, a transportation devices for the anchor block of pulling beam was newly devised and used.
Atomic Layer Deposition of TiO₂ Thin Films from Ti(O^(i)Pr)₂(dmae)₂ and H₂O
Sung, Myung Mo 국민대학교 2003 기초과학연구소 논문집 Vol.22 No.-
TiO₂ thin films were grown on Si (100) substrates by atomic layer deposition using [Ti(Opr^(i))₂(dmae)₂] and water as precursors. The thickness, chemical composition, crystalline structure, and morphology of the deposited films were investigated by transmission electron microscopy, UV spectrometry, X-ray photoelectron spectroscopy, X-ray diffraction, and atomic force microscopy. The results show that TiO₂ ALD using [Ti(OPr^(i))₂(dmae)₂] as a precursor is self-controlled at temperatures of 100 - 300℃. At the growth temperatures below 300℃, the surface morphology of the TiO₂ films is smooth and uniform. The TiO₂ film was grown with a preferred orientation toward the [101] direction at 400℃.
Preparation of LiGaO₂ Thin Films by Chemical Vapor Deposition
Sung, Myung Mo 국민대학교 2002 기초과학연구소 논문집 Vol.21 No.-
LiGaO₂ films have been grown on Si (100) substrates using a new single precursor, [Li(OCH₂CH₂OCH₃)₂Ga(CH₃)₂]₂ under high vacuum conditions (5 × 10^(-6) Torr). The [Li(OCH₂CH₂OCH₃)₂Ga(CH₃)₂]₂ was synthesized and characterized using spectroscopic methods and single-crystal X-ray diffraction analysis. The chemical composition, crystalline structure, and morphology of the deposited films were investigated by X-ray photoelectron spectroscopy, X-ray diffraction, and scanning electron microscopy. The results show that polycrystalline LiGaO₂ films preferentially oriented in the [010] direction can be deposited on Si (100) at 500-550℃ by MOCVD. The single precursor [Li(OCH₂CH₂OCH₃)₂Ga(CH₃)₂]₂ has been found suitable for chemical vapor deposition of LiGaO₂ thin films on Si substrates.