http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
박제준,정명상,김진국,이희덕,강민구,송희은,Park, Je Jun,Jeong, Myeong Sang,Kim, Jin Kuk,Lee, Hi-Deok,Kang, Min Gu,Song, Hee-eun 한국전기전자재료학회 2013 전기전자재료학회논문지 Vol.26 No.1
Crystalline silicon solar cells with $SiN_x/SiN_x$ and $SiN_x/SiO_x$ double layer anti-reflection coatings(ARC) were studied in this paper. Optimizing passivation effect and optical properties of $SiN_x$ and $SiO_x$ layer deposited by PECVD was performed prior to double layer application. When the refractive index (n) of silicon nitride was varied in range of 1.9~2.3, silicon wafer deposited with silicon nitride layer of 80 nm thickness and n= 2.2 showed the effective lifetime of $1,370{\mu}m$. Silicon nitride with n= 1.9 had the smallest extinction coefficient among these conditions. Silicon oxide layer with 110 nm thickness and n= 1.46 showed the extinction coefficient spectrum near to zero in the 300~1,100 nm region, similar to silicon nitride with n= 1.9. Thus silicon nitride with n= 1.9 and silicon oxide with n= 1.46 would be proper as the upper ARC layer with low extinction coefficient, and silicon nitride with n=2.2 as the lower layer with good passivation effect. As a result, the double layer AR coated silicon wafer showed lower surface reflection and so more light absorption, compared with $SiN_x$ single layer. With the completed solar cell with $SiN_x/SiN_x$ of n= 2.2/1.9 and $SiN_x/SiO_x$ of n= 2.2/1.46, the electrical characteristics was improved as ${\Delta}V_{oc}$= 3.7 mV, ${\Delta}_{sc}=0.11mA/cm^2$ and ${\Delta}V_{oc}$=5.2 mV, ${\Delta}J_{sc}=0.23mA/cm^2$, respectively. It led to the efficiency improvement as 0.1% and 0.23%.
박제준(Je-Jun Park),이승희(Seung-Hee Lee) 한국전산유체공학회 1997 한국전산유체공학회 학술대회논문집 Vol.1997 No.-
Numerical calculations are carried out to analyze the coandag effect for an uncambered, rounded trailing edge foil section. The basic circulation control concept involves the well known Coanda effect principal, where a thin jet of fluid remains attached to an foil's rounded trailing edge due to balance between centrifugal force and the pressure differential produced by jet velocity. The present study shows high lift can be obtained by employing a coanda wing.
박제준(Je-Jun Park),이승희(Seung-Hee Lee) 한국전산유체공학회 1998 한국전산유체공학회 학술대회논문집 Vol.1998 No.-
A Numerical simulation on the flow around a Rudder with blowing is performed by Finite Volume Method. The governing equations are three dimensional incompressible Navier-Stokes equation and Continuity equation. Flow field around a finite Rudder including tip vortex is simulated and the change of the lift force by blowing is analyzed.
박제준(Park, Je-Jun),김진국(Kim, Jin-Kuk),이희덕(Lee, Hi-Deok),강기환(Kang, Gi-Hwan),유권종(Yu, Gwon-Jong),송희은(Song, Hee-eun) 한국태양에너지학회 2011 한국태양에너지학회 학술대회논문집 Vol.2011 No.11
Hydrogenated silicon nitride deposited by LF-PECVD is commonly used for anti-reflection coating and passivation in silicon solar cell fabrication. The deposition of the optimized silicon nitride on the surface is elemental in crystalline silicon solar cell. In this work, the carrier lifetimes were measured while the thicknesses of SiNx were changed from 700Å to 1150Å with the gasflow of SiH4 as 40 sccm andNH3 as 120 sccm,. The carrier lifetime enhanced as the thickness of SiNx increased due to improve dpassivation effect. To study the characteristics of SiNx with various gas ratios, the gas flow of NH3 was changed from 40 sccm to 200 sccm with intervals of 40 sccm. The thickness of SiNx was fixed as1000Å and the gasflow ofSiH4 as 40 sccm.The refractive index of SiNx and the carrier lifetime were measured before and after heat treating at 650°C to investigate their change by thefiring process in solar cell fabrication. The index of refraction of SiNx decreased as the gas ratios increased and the longest carrier lifetime was measured with the gas ratio NH3/SiH4of 3.
정상 노화와 치아소실 유무에 따른 삼킴문제 및 삶의 질
박제준(Park, Je Jun),서혜경(Suh, Hye Kyung),윤지혜(Yoon, Ji Hye) 한국노년학회 2014 한국노년학 Vol.34 No.3
삼킴은 인간의 생명유지와 밀접한 관련이 있을 뿐만 아니라 기본적 욕구 중 하나인 식욕을 해결하므로 개인의 삶의 질에 있어서 중요한 부분을 차지한다. 인간은 나이가 듦에 따라 신체적 감퇴를 보일 수 있고, 이러한 신체적 변화들은 삼킴 관련 기제에 영향을 미칠 수 있다. 이에 본 연구에서는 102명의 정상 성인 및 노인(65세 미만의 성인 40명, 65세 이상의 노인 62명)을 대상으로 설문을 실시하여 정상 노화과정에서 관찰되는 삼킴기능의 변화와 삼킴 관련 삶의 질(SWAL-QOL) 및 건강 관련 삶의 질(SF-36)을 살펴보았다. 그리고 치아소실 여부가 삼킴문제 및 삶의 질에 미치는 영향 및 측정변인들 간의 관련성을 확인하였다. 자료 분석 결과, 첫째, 삼킴장애 위험군으로 분류되는 인원은 65세 이상에서 더 많았다. 둘째, 65세 미만 집단과 비교하여 65세 이상 집단은 삼킴 관련 삶의 질과 전반 건강 관련 삶의 질이 유의하게 낮은 것으로 나타났다. 마지막으로, 65세 이상 집단에서는 치아소실이 있는 대상자가 치아소실이 없는 대상자에서보다 삼킴문제가 더 빈번하고 삶의 질은 낮았다. 본 연구 결과는 노화의 영향으로 인한 노년층의 삼킴능력 감퇴와 삶의 질의 저하에 대한 중요한 정보를 제공하였다는 점에서 의의가 있다. Deterioration of swallowing ability caused by aging process may negatively affect the quality of life. The aim of this study was to investigate the frequency of experience of swallowing problems and the relationship among swallowing problems, quality of life, and other related factors in normal elderly. The participants in this study were 102 normal adults, and they were divided into two separate age categories (40 persons aged 64 and younger and 62 persons aged 65 and older). The results are as follows: 1) the older group experienced more swallowing problems than the younger group. 2) the older group showed lower quality of life. 3) the participants with missing teeth showed higher dysphagia risk and lower quality of life compared to the participants with retained teeth. These results provide the information for the decline of swallowing function and quality of life caused by normal aging.
박제준(Park, Je-Jun),김진국(Kim, Jin-Kuk),송희은(Song, Hee-eun),강민구(Kang, min-gu),강기환(Kang, Gi-Hwan),이희덕(Lee, Hi-Deok) 한국태양에너지학회 2013 한국태양에너지학회 논문집 Vol.33 No.2
Silicon nitride(SiNx:H) deposited by radio frequency plasma enhanced chemical vapor deposition(RF-PECVD) is commonly used for anti-reflection coating and passivation in crystalline silicon solar cell fabrication. In this paper, characteristics of the deposited silicon nitride was studied with change of working pressure, deposition temperature, gasratio of NH₃ and SiH₄, and RF power during deposition. The deposition rate, refractive index and effective life time were analyzed. The(100)p-type silicon wafers with one-side polished, 660-690μm, and resistivity 1-10 Ω·㎝ were used. As a result, when the working pressure increased, the deposition rate of SiNx was increased while the effective life time for the SiNx-deposited wafer was decreased. The result regarding deposition temperature, gas ratioand RF power changes would be explained in detail below. In this paper, the optimized condition in silicon nitride deposition for silicon solar cell was obtained as 1.0 Torr for the working pressure, 400°C for deposition temperature, 500 W for RF power and 0.88 for NH₃/SiH₄ gasratio. The silicon nitride layer deposited in this condition showed the effective life time of>1400μs and the surface recombination rate of 25cm/s. The crystalline silicon solar cell fabricated with this SiNx coating showed 18.1% conversion efficiency.
박제준(Park Je Jun),윤지혜(Yoon Ji Hye) 한국장애인재활협회 2015 재활복지 Vol.19 No.2
생성이름대기 검사는 제한된 시간 내에 주어진 범주에 해당하는 단어를 산출하는 능력을 평가한다. 대상자가 과제를 원활하게 수행하기 위해서는 해당 범주에 속하는 어휘를 보유해야 함과 동시에 단어를 빠르고 정확하게 찾을 수 있는 책략인 전환과 군집화를 효율적으로 사용해야 한다. 본 연구는 65~85세 노년층 42명과 18~21세 청년층 42명을 대상으로 생성이름대기 과제를 실시하여 수행력(정반응과 오반응 수, 반응 시간, 유창한 단어 수)의 차이를 비교하였다. 또한, 단어 산출 책략인 전환과 군집화의 사용 여부 및 전환이 이루어지는 시간을 측정하였다. 또한 이러한 책략과 인지기능과의 관련성을 확인하기 위하여 기호잇기검사를 실시하였다. 분석 결과, 노년층은 청년층에 비해 정반응 수와 유창하게 말한 단어의 수가 적었고 반응 시간이 길었다. 책략 측면에서는 전환의 수가 적고, 전환에 소요되는 시간이 길었다. 마지막으로, 전환의 수는 기호잇기검사의 수행시간과 부적인 상관을 보였다. 이러한 결과는 노화로 인한 전두엽 기능 감퇴가 단어 산출 능력을 저하시킨다는 기존의 가설을 지지함과 동시에 생성이름대기 수행 시 청년층과는 다른 책략을 사용하며, 전략적인 단어 찾기 책략인 전환 능력과 인지적 유연성의 감퇴가 관련이 있음을 시사한다. Generative naming is regarded as a test to assess one's abilities to work on efficient strategies and to extract words from one's mental lexicon, which would fit given categories, within a limited time. Switching and clustering are referred to as strategies to help one find a word both rapidly and efficiently. The participants in this study were 42 normal adults at the age of 65 to 85 and 42 younger individuals at the age of 18 to 21. All participants carried out generative naming test which was followed by Korean-Trail Making Test-Elderly's version. For data analysis, we measured the number of correct responses, incorrect response, reaction time, the number of fluent word, clustering size, number of switching, switching time, and performance time on Trail Making Test. Findings are summarized as follows. First, compared to the younger group, the older group showed the small numbers of correct responses and fluent words with delayed reaction time. Second, the older group showed the small numbers of switching and they needed more time to switch. Third, the number of switching was negatively correlated with the performance time on Trail Making Test. Our results support the notion that the functional decline of the frontal lobe caused by normal aging could deteriorate abilities on word retrieval. Furthermore, strategies of switching might be related to the functional decrease of the cognitive flexibility.
결정질 실리콘 태양전지 응용을 위한 PA-ALD를 이용한 Al2O3 특성 분석
송세영(Se Young Song),박제준(Je-Jun Park),강민구(Min Gu Kang),송희은(Hee-eun Song),장효식(Hyo Sik Chang) 한국태양에너지학회 2012 한국태양에너지학회 학술대회논문집 Vol.2012 No.11
Aluminum oxide(Al2O3) flim by atomic layer deposition (ALD) is known to supply excellent surface passivation properties on crystalline Si surfaces. The passivation layer with good quality is important for high-efficiency silicon solar cell. Since Al2O3 has fixed negative charge, it forms effective surface passivation by field effect passivation on the rear side in p-type silicon solar cell. However, Al2O3 by ALD process needs very long process time, which is not applicable in the conventional silicon solar cell. In this paper, plasma-assisted ALD was applied to form Al2O3 to reduce the process time. Plasma-assisted atomic layer deposition (PA-ALD) technique was used to trimethylaluminum (TMA) precursors and O2 gas plasma species leading to self limiting surface reaction. this is adopted as a promising method for growing Al2O3 thin films. To optimize the Al2O3 layer properties, the deposition temperature was changed in range of 150-250℃, then the annealing temperature and time were varied. As a result, aluminum oxide (Al2O3) flim on the silicon wafer formed in the deposition temperature, the annealing temperature and time with 250℃, 400℃ and 10 min, respectively, showed the best lifetime of 1610μs.
결정질 실리콘 태양전지의 이중 반사방지막 특성에 대한 연구
김진국(Jin-Kuk Kim),박제준(Je-Jun Park),홍지화(Ji Hwa Hong),김남수(Nam-Soo Kim),강기환(Gi-Hwan Kang),유권종(Gwon Jong Yu),송희은(Hee-eun Song) 한국태양에너지학회 2012 한국태양에너지학회 학술대회논문집 Vol.2012 No.3
The paper focuses on an anti-reflection (AR) coating deposited by PECVD in silicon solar cell fabrication. AR coating is effective to reduce the reflection of the light on the silicon wafer surface and then increase substantially the solar cell conversion efficiency. In this work, we carried out experiments to optimize double AR coating layer with silicon nitride and silicon oxide for the silicon solar cells. The p-type mono crystalline silicon wafers with 156*156mm2 area, 0.5-3 Ω·cm resistivity, and 200㎛ thickness were used. All wafers were textured in KOH solution, doped with POCl3 and removed PSG before ARC process. The optimized thickness of each ARC layer was calculated by theoretical equation. For the double layer of AR coating, silicon nitride layer was deposited first using SiH4 and NH3, and then silicon oxide using SiH4 and N2O. As a result, reflectance of SiO2/SiNx layer was lower than single SiNx and then it resulted in increase of short-circuit current and conversion efficiency. It indicates that the double AR coating layer is necessary to obtain the high efficiency solar cell with PECVD already used in commercial line.