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광유도도금을 이용한 스크린 프린팅 결정질 실리콘 태양전지의 효율 향상
정명상,강민구,장효식,송희은,Jeong, Myeong Sang,Kang, Min Gu,Chang, Hyo Sik,Song, Hee-Eun 한국전기전자재료학회 2013 전기전자재료학회논문지 Vol.26 No.3
Screen printing is commonly used to form the front/back electrodes in silicon solar cell. But it has caused high resistance and low aspect ratio, resulting in decreased conversion efficiency in solar cell. Recently the plating method has been combined with screen-printed c-Si solar cell to reduce the resistance and improve the aspect ratio. In this paper, we investigated the effect of light induced silver plating with screen-printed c-Si solar cells and compared their electrical properties. All wafers were textured, doped, and coated with anti-reflection layer. The metallization process was carried out with screen-printing, followed by co-fired. Then we performed light induced Ag plating by changing the plating time in the range of 20 sec~5min with/without external light. For comparison, we measured the light I-V characteristics and electrode width by optical microscope. During plating, silver ions fill the porous structure established in rapid silver particle sintering during co-firing step, which results in resistance decrease and efficiency improvement. The plating rate was increased in presence of light lamp, resulting in widening the electrode with and reducing the short-circuit current by shadowing loss. With the optimized plating condition, the conversion efficiency of solar cells was increased by 0.4% due to decreased series resistance. Finally we obtained the short-circuit current of 8.66 A, open-circuit voltage of 0.632 V, fill factor of 78.2%, and efficiency of 17.8% on a silicon solar cell.
결정질 실리콘 태양전지에서 도금을 이용한 전극 형성 시 발생되는 레이저 손상 제거
정명상,강민구,이정인,송희은,Jeong, Myeong Sang,Kang, Min Gu,Lee, Jeong In,Song, Hee-eun 한국전기전자재료학회 2016 전기전자재료학회논문지 Vol.29 No.6
In this paper, we investigated the electrical properties of crystalline silicon solar cell fabricated with Ni/Cu/Ag plating. The laser process was used to ablate silicon nitride layer as well as to form the selective emitter. Phosphoric acid layer was spin-coated to prevent damage caused by laser and formed selective emitter during laser process. As a result, the contact resistance was decreased by lower sheet resistance in electrode region. Low sheet resistance was obtained by increasing laser current, but efficiency and open circuit voltage were decreased by damage on the wafer surface. KOH treatment was used to remove the laser damage on the silicon surface prior to metalization of the front electrode by Ni/Cu/Ag plating. Ni and Cu were plated for each 4 minutes and 16 minutes and very thin layer of Ag with $1{\mu}m$ thickness was plated onto Ni/Cu electrode for 30 seconds to prevent oxidation of the electrode. The silicon solar cells with KOH treatment showed the 0.2% improved efficiency compared to those without treatment.
도금을 이용한 스크린 프린팅 결정질 실리콘 태양전지의 효율 향상
정명상(Myeong Sang Jeong),백태현(Tae Hyeon Baek),홍지화(Ji Hwa Hong),송희은(Hee-eun Song),강민구(Min Gu Kang),장효식(Hyo Sik Chang) 한국태양에너지학회 2012 한국태양에너지학회 학술대회논문집 Vol.2012 No.11
Screen printing is commonly used to form the front/back electrodes in silicon solar cell. Recently the plating method is applied in c-Si solar cell to reduce the resistance and to improve the aspect ratio. In this paper, we investigated the effect of electroless Ag plating by adding it into screen-printed c-Si solar cell. The solar cells were fabricated with conventional procedure with 156×156 mm<SUP>2</SUP>, 200 μm, 0.5-3.0 Ω·cm and p-type single crystalline silicon wafer. All wafers were textured, doped, and anti-reflection coated. The metallization process was performed with screen-printing and fired. Then we carried out electroless Ag plating by changing the plating time in the range of 20sec~5min and measured the light I-V curve and optical microscope. Electroless Ag plating solution was mixture of AgCN, KCN and KOH. As a result, the conversion efficiency of solar cells was increased due to improved current density (Isc) and fill factor (FF). Finally we obtained Isc of 8.582A, Voc of 0.628V, FF of 79.1, Eff of 17.7% on a silicon solar cell.