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남태양,신중우,김재철 한국정보통신설비학회 2019 한국정보통신설비학회 학술대회 Vol.2019 No.08
More recently, HVDC's application to the power sector has been increasing. But clear maintenance standards have not been established. In addition, ICT facilities for HVDC-class converters need to be studied. In this paper, the availability of all stations considering the ICT facilities of BTB HVDC was evaluated. ICT facilities have a lower impact on availability than other subsystem facilities. In addition, the effects of each subsystem failure on the overall system and on the location of ICT equipment need to be studied.
질소 분극면을 갖는 N형 질화물반도체의 접촉저항 감소를 위한 산소 플라즈마 효과에 관한 연구
남태양,김동호,이완호,김수진,이병규,김태근,조영창,최연식,Nam, T.Y.,Kim, D.H.,Lee, W.H.,Kim, S.J.,Lee, B.G.,Kim, T.G.,Jo, Y.C.,Choi, Y.S. 한국진공학회 2010 Applied Science and Convergence Technology Vol.19 No.1
본 논문은 N-face n-type GaN 표면에 산소 플라즈마 처리에 의해서 오믹전극과 접촉 저항을 낮추기 위한 연구를 하였다. 120초 산소 플라즈마 처리후 Ti (50 nm) / Al (35 nm)을 증착한 결과 오믹 전극을 구현하였으며, $1.25{\times}10^{-3}\;{\Omega}cm^2$의 접촉저항을 보였다. 이는 산소 플라즈마 처리가 기존의 플라즈마 처리와 같이 질소결원이 발생하였기 때문이다. 이를 통해 쇼트키장벽 높이(SBH)이 낮아지게 되었고, 오믹 전극및 플라즈마 처리를 안 한 경우보다 더 낮은 접촉저항의 결과를 획득하였다. We studied the effect of $O_2$ plasma treatments on the electrical property of Ti / Al ohmic contacts to N-face n-type GaN. The surface of N-face, n-type GaN has been treated with $O_2$ plasma for 120 s before the deposition of bilayered electrodes, Ti (50 nm) / Al (35 nm), and its contact resistance was compared with that of the reference sample without $O_2$ plasma. As a result, we found that the ohmic contact was reduced from $4.3\;{\times}\;10^{-1}\;{\Omega}cm^2$ to $1.25\;{\times}\;10^{-3}\;{\Omega}cm^2$ by applying $O_2$ plasma on the surface of n-type GaN, which was attributed to the reduction in the Schottky barrier height (SBH), caused by nitrogen vacancies formed during the $O_2$ plasma process.