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ZnTe-InSb Heterojunction의 전기적 특성
김화택 대한전자공학회 1975 전자공학회지 Vol.12 No.4
ZnTe-lnSb Heterojunction을 계면합금법으로 제작했다. Insb의 In이 ZnTe결정에 확산되어 계면에 고저항 ZnTe충을 성장시켜 P-i-n구조를 갖고 있으며 전류수송기구는 p형 ZnTe 가전자대로부터 고저항 ZnTe충에 주입된 Hole의 SCLC기구에 의존된다. 순방향과 역방향 전압을 인가할때 실온에서 오런지색 전 장발장이 관측되었다. The Zn7e-lnSb heterojunctions was prepared by interface alloying technique. The structure of this beterojunction had p-i-n which semi-insulating ZnTe laver at interface of this heterojunction was formed by diffusing In of InSb into ZnTe crystal. The current transport mechanism of this heterojunction was Spacecharge-Limited-Current(SCLC) mechanism by hole at semi-insulating ZnTe layer. The hole wart injected from valence band of p- type SnTe crystal. Orange color electroluminescence was observed at this heterojunction when forward and reversed bias voltage applied. The Zn7e-lnSb heterojunctions was prepared by interface alloying technique. The structure of this beterojunction had p-i-n which semi-insulating ZnTe laver at interface of this heterojunction was formed by diffusing In of InSb into ZnTe crystal. The current transport mechanism of this heterojunction was Spacecharge-Limited-Current(SCLC) mechanism by hole at semi-insulating ZnTe layer. The hole wart injected from valence band of p- type SnTe crystal. Orange color electroluminescence was observed at this heterojunction when forward and reversed bias voltage applied.
$Ga_{1-x}In_xSe $ 단결정의 Energy Gap의 온도 의존정에 관한 연구
김화택,윤창선 대한전자공학회 1984 전자공학회지 Vol.21 No.2
Ga1-xlnxSe 단결정을 X=0.0∼0.1영역과 X=0.8-1.0영역에서 Bridgman방법으로 성장시켰다. 성장된 Ga1-xlnxSe 단결정은 X=0.0∼0.1영역에서는 hexagonal구조, X=0.8∼1.0영역에서는 rhombohedral 구조를 가지고 있었다. CaInSe 단결정은 간접천이형 energy gap을 가지고 있었으며, 15°K에서 250°K로 시편의 온도가 상승할 때 energy gap 은 감소되었고, 온도계수는 (-2.4∼-4.3)×10-4eV/K으로 주어졌다. Ga1-xlnxSe 단결정의, energy gap에 온도 의존성은 Schmid의 electron-phonon 상호작용의 이론으로 설명할 수 있었다. The Ga1-xInxSe single crystals for 0.0 < x < 0.1 and 0.8 < 1.0 were grown by the Bridgman method. The crystal structure of Ga1-xInxSe is found to be hexagonal for 0.0 < X < 1.0. The Ga1-xInxSesingle crystals have indirect energy gap with a temperature coefficient dEg/dT= -(2.4 - 4.3) $\times$ 10-4 eV/K in the range 60-250K. The temperature dependence of the energy gap can be explained by the electron-Phonos interaction model.
Si-ZnSe n-n Heterojunction의 광기전력 효과
김화택 대한전자공학회 1978 전자공학회지 Vol.15 No.1
Flash증착법으로 Si단결정 (111)면위 에 ZnSe박막을 성장시켜 Si-ZnSe n-n heterojunction을 만들었다. 이 heterojunction의 광기전력 특성을 규명하여 가시광 영역에 감도를 갖는 frequency meter로 사용할 수 있음을 제시했다. Si-ZnSe n-n heterojunction was made by growing ZnSe thin film on the Si single crystal (111) surface with Bash evaporating method in vacuum. This heterojunction was found to be a useful device for frequency meter in the visible wave-length from the measuring of the photovoltaic effect of the heterojunction.
Photoluminescence Spectra of MgxZn1-xSe Single Crystals
김화택,Moon-Seog Jin,이충일,박상안,Se-Jong Baik 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.3
Two types (type A and type B) of MgxZn1ကxSe single crystals were grown to obtain white emission materials. In the type A Mg0:25Zn0:75Se single crystal at 13 K, blue and green emission peaks were observed, and the temperature dependence of those emission peaks was well tted with the Varshni equation. The emission peaks were analyzed and found to originate from donor-acceptor pair recombinations. The photoluminescence spectra of the type A single crystals had no red emission peak. In the type B MgxZn1ကxSe single crystals at 6 K, red emission peaks were observed. The photoluminescence emission of the type B single crystals was whiter than that of the type A single crystals. This fact was identied by measuring the color coordinates of the white photoluminescence emission in the type B single crystals.
김화택,윤창선,김창대,최성휴,진문석,박태영,박광호 한국진공학회 1997 Applied Science and Convergence Technology Vol.6 No.1
순수한 $ZnAl_2S_4,;ZnAl_2Se_4,;CdAl_2S_4,;and;CdAl_2Se_4$ 및 cobalt와 erbium을 불순물로 첨가 한 이들 단결정을 화학수송법으로 성장시켰다. 성장된 단결정의 결정구조, 격자상수, 광학적 energy gap, photoluminescence 특성 등을 측정하여 광학적 전이 기구를 규명하였다. Undoped, cobalt-doped and erbium-doped $ZnAl_2S_4, ;ZnAl_2Se_4, ;CdAl_2S_4, ;and;CdAl_2Se_4$ single crystals were grown by the chemical transport reaction method. The crystal structures, the lattice constants, the optical energy gaps, and the photoluminescence properties of these single crystals were investigated. Also, the optical transition mechanisms by the impurities of cobalt and erbium were identified from these results.
$I^B-AI-VI^B_2$ 및 $I^B-AI-VI^B_2 :Co^{2+}$결정의 광학적 특성연구
김화택,김창대,윤창선,진문석,최성휴 한국진공학회 1995 Applied Science and Convergence Technology Vol.4 No.3
IB-AI-VIB2 및 IB-AI-VIB2 :Co2+ 결정을 고순도 원소를 출발 물질로 하고 iodine을 수송 매체로 사용하여 chemical transport reaction method로 성장시켰다. 성장된 결정의 결정구조는 chalcopyrite 구조였으며, energy gap은 direct band gap으로 3.514~1.814 eV 정도로 주어졌으며, cobalt를 불순물로 첨가할 때 energy gap은 감소하였다. IB-AI-VIB2 :Co2+ 결정에서 첨가된 cobalt가 모체결정의 Td symmetry site에 Co2+ ion으로 위치하여, Co2+ ion의 energy 준위 사이의 전자전이에 기인하는 불순물 광흡수 peaks가 나타났다. 이 불순물 광흡수 peaks에 결정장 이론을 적용하여 구산 1st-order spin-orbit coupling parameter(λ)는 -183~ -189cm-1정도였고, 2nd-order spin-orbit coupling parameter(P)는 225~239 cm-1정도였으며, crystal field parameter(Dq)는 328~395cm-1, Racah parameter(B)는 531~552cm-1정도였다.
Photoluminescence Spectra of Ho3+-, Er3+- and Tm3+-doped Zn1?xMgxSe Single Crystals
김화택,Se-Jong Baik,박상안,김남오,Hyung-Gon Kim,Moon-SeogJin 한국물리학회 2005 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.46 No.1
Zn1−xMgxSe:Ho3+ (x = 0.093, 0.123, 0.161, 0.235, 0.306, and 0.481), Zn1−xMgxSe:Er3+ (x =0.097, 0.122, 0.158, 0.232, 0.309, and 0.476), and Zn1−xMgxSe:Tm3+ (x = 0.098, 0.120, 0.160,0.234, 0.294, and 0.482) single crystals were grown by using the chemical transport reaction (CTR) method with BN(boron nitride) tubes. The Zn1−xMgxSe:Ho3+, the Zn1−xMgxSe:Er3+, and the Zn1−xMgxSe:Tm3+ single crystals showed a white emission. The dopants Ho3+, Er3+, and Tm3+in the single crystals play an important role to enhance the white emission. We identified the white photoluminescence emissions of the single crystals by measuring their color oordinates.
$Si-SnO_2 $ Heterojunction의 전기적 광학적 특성
김화택 대한전자공학회 1976 전자공학회지 Vol.13 No.2
p형과 n형 Si wafer의 111면위에 5x10-5mmHg의 진공내에서 SnO2-x박막을 Flash증착법으로 성장시킨 다음 산소분위기 속에서 열처리하여 Si-SnO2 heterojunction을 만들고 물성측정으로 부터 Energy bnad profile을 구하였다. 이 heterojunction은 양호한 정류성 Junction이며 400nm부터 1200nm까지 분광감도를 갖고 시정수가 -10-18sec로 고속광소자로 적합하며 Si p-n homojunction solar cell에 비하여 특성이 우수하고 제작이 간단하기 때문에 태양전지로 사용해도 손색이 없다. Si-SnO2 heterojunction was prepared by oxidzing at oxygen atmosphere SnO2-x Which made by Flith evaporation of SnO2 powder on III surface of p and n type Si single crystals. The energy band Profile of Si·SnO2 heterojunction was depicted from its physical properties. This heterojunction was very good rectifying junction, very sensitive in spectral response of Photovoltage at from 400nm to 1200nm, and -10-8sec of time contant. From above properties, this heterojunction was found ps good high speed photovoltaic device and solar cell. $Si{\cdot}SnO_{2}$ heterojunction was prepared by oxidzing at oxygen atmosphere $SnO_{2-X}$ Which made by Flith evaporation of $SnO_{2}$ powder on III surface of p and n type Si single crystals. The energy band Profile of $Si{\cdot}SnO_{2}$ heterojunction was depicted from its physical properties. This heterojunction was very good rectifying junction, very sensitive in spectral response of Photovoltage at from 400nm to 1200nm, and -10$^{18}$sec of time contant. From above properties, this heterojunction was found ps good high speed photovoltaic device and solar cell.