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N<sub>2</sub> Gas 유량에 따른 TiNO<sub>x</sub>/Ti/Al 흡수율 변화
김진균,장건익,김현후,Kim, Jin-Gyun,Jang, Gun-Eik,Kim, Hyun-Hoo 한국전기전자재료학회 2015 전기전자재료학회논문지 Vol.28 No.2
Ti was deposited on the Al substrate using DC magnetron sputtering with changing the $N_2$ gas for the possible application of a solar absorbing layer. $N_2$ gas ranged from 50 to 75 sccm was systematically applied in the 5 sccm interval and the variation of the absorption rate was investigated. Microstructural examination and elemental analysis indicate that Ti was reacted with $N_2$ gas and formed $TiNO_x$ compound. As compared with the film without any exposure of $N_2$ gas, absorption rate improved by more than 20%. Typically the average absorption of $TiNO_x$ fim with 65% of $N_2$ gas was about 99% in the visible range, and the average absorption was more than 90% in the infrared absorption region respectively.
김진균,이상돈,장건익,Kim, Jin-Gyun,Lee, Sang-Don,Jang, Gun-Eik 한국전기전자재료학회 2017 전기전자재료학회논문지 Vol.30 No.2
$SnO_2/Ag/Nb_2O_5/SiO_2/SnO_2$ multilayer films were prepared on glass substrate by sequential using RF/DC magnetron sputtering at room temperature. The influence of top $SnO_2$ layer thickness on optical and electrical properties of the multilayer films was investigated. Experimentally measured results exhibit transmittances over 84.3 ~ 85.8% at 550 nm wavelength. As the top $SnO_2$ layer thickness increased from 40 to 55 nm, the sheet resistance (Rs) increased from 5.81 to $6.94{\Omega}/sq$. The Haacke's figure of merit (FOM) calculated for the samples with various $SnO_2$ layer thicknesses was a maximum at 45 nm ($35.3{\times}10^{-3}{\Omega}^{-1}$).