http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Enhanced Adhesion of Cu Film on a Low-k Material through Interfacial Modification
고연규,S. LEE,H. M. Lee,H. J. Yang,J. Y. Kim,J. Kim,J. H. Lee,신현정,남원종,J. G. Lee,C. Shim,D. Jung,E. G. Lee,C. M. Lee,P. J. Reucroft 한국물리학회 2005 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.47 No.3
The adhesion behavior of Cu lm on a low-k material has been investigated. A low-k flm that was deposited by using a mixture of hexamethyldisilane (HMDS) and para-xylene (p-xylene) had a dielectric constant as low as 2.7 and was thermally stable up to 400C. An interfacial Ti layer,boron dopant in the Cu flm, and N2-plasma treatment were all applied to improve adhesion betweenCu and the low-k flm. Adhesion was signicantly enhanced by the N2-plasma treatment on the low-k lm and by the boron dopant in the Cu flm. This enhanced adhesion was attributed to the formation of new binding states between Ti and the plasma-treated surface of the low-kflm and also to the diffusion of B from Cu to the Ti flm. Boron dopant in the Cu flm showed the best performance for adhesion among the three treatments. The Cu(B)/Ti/low-k flm composite annealed at 350 C withstood an applied load of about 23 N during a scratch test.
The Angular Distributions of the Products from B^(11)(p,α)Be^8 Reaction
Ko, Youn Kyu,Lee, Chul Chu,Kim, Do Kyung 연세대학교 대학원 1970 延世論叢 Vol.7 No.1
300 keV Cockcroft-walton형 원자핵 가속기를 사용하여 B11(p,α)Be8 핵반응을 실시한 바 실험계 각 30˚ 부터 145˚의 범위에 걸쳐서 생성되는 α-입자의 energy 및 생선률에 관한 각도분포를 연구하였다. 이때 가속된 proton 입자의 energy는 140 keV였다. 이 핵반응에서 생성되는 α-입자의 energy 각도 분포는 윤동학적 이론치와 잘 일치되는 것을 알았다. 또 90˚ 방향에서 단위입체각 당 생성되는 α-입자의 생성률에 대해서 각 방향으로 방출되는 α-입자의 생성비률의 비는 1+A(E)cos2θ로 표시될 수 있다. 여기에서 θ는 입사되는 Proton Beam 방향에 대해서 생성되는 α-입자의 방출방향사이의 질량중심계의 각으로 표시한 것이다. 이 실험에서 A(E)의 값은 이론치와 비교해서 입사 Proton energy 가 140 keV일 때 0.15임을 알았다. The angular distributions of the reaction products of B11(p,α)Be8 reaction have been investigated over the range of angle from 30˚ to 145˚ at a bomberding proton energy of 140 keV. The energy angular distribution of α-particles of our data agreed well with the kinematic theoretical distribution. The angular distribution of the yield ratio to the number emitted per unit solid angle at 90˚ could be ploted by the expression 1+A(E) cos2θ, whereo is the angle in the center of mass system of coordinates between the observed disintegration α-particles and the incident proton beam, and the value of A(E) was taken to be 0.15 compared with the theoretical value.
Some Crystalline Properties and Growth Condition of BP(100)Epitaxially Grown on Si(100) Substrates
김철주,고연규,안철,Kim, Chul Ju,Koh, Youn Kyu,Ahn, Chul The Institute of Electronics and Information Engin 1986 전자공학회논문지 Vol.23 No.6
Boron monophosphide(100) was eitaxially grown on Si(100) substrate by thermal reaction of B2H6 and PH3 in hydrogen ambient. In an LPCVD system, the growth condition was studied as a function of gas mixture composition and temperature. For the growth temperature of 950\ulcorner in the constant flow rate (partial pressure) of B2H6, n-BP with c(2x2) surface structure was obtained in the PH3 partial pressure of 300-500 cc/min. On the other hand, for the growth temperature of 1080\ulcorner, p-BP with surface structure was observed for the PH3 partial pressure of 400-500cc/min.