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Ag가 도핑된 칼코게나이드 $As_{40}Ge_{10}Se_{15}S_{35}$ 박막의 광분해, 광확산특성 및 홀로그래픽 격자형성
정홍배,Chung, Hong-Bay 대한전기학회 2006 전기학회논문지C Vol.55 No.10
In the present work, we investigated the photodissolution and photodiffusion effect on the interface of Ag/chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film by measuring the absorption coefficient, the optical density, the resistance change of Ag layer. It was found that the photodissolutioniphotodiffution ratio depends on the magnitude of photon energy absorbed in the chalcogenide thin film and the depth of photodiffution was proportional to the square root of the exposed time. Also, we have investigated the holographic grating formation with P-polarization states on chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film and $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double layer structure thin film. Holographic gratings have been formed using He-Ne laser (632.8 nm) which have a smaller energy than the optical energy gap, $E_g\;_{opt}$ of the film, i. e., an exposure of sub-bandgap light $(h{\upsilon}<E_g\;_{opt})$ under P-polarization. As the results, we found that the diffraction efficiency on $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double layer structure thin film was more higher than that on single $As_{40}Ge_{10}Se_{15}S_{35}$ thin film. Also, we obtained that the maximum diffraction efficiency was 0.27 %, 1,000 sec on $As_{40}Ge_{10}Se_{15}S_{35}\;(1{\mu}m)/Ag$ (10 nm) double layer structure thin film by (P: P) polarized recording beam. It will offer lots of information for the photodoping mechanism and the analyses of chalcogenide thin films.
무기질 a-$Se_{75}Ge_{25}$ 박막을 이용한 네가티브형 포토레지스트의 특성연구
정홍배,허훈,김태완,Chung, Hong-Bay,Huh, Hoon,Kim, Tae-Wan 한국전기전자재료학회 1988 電氣電子材料學會誌 Vol.1 No.4
본 연구에서는 미세패턴 형성을 위한 비정질 $Se_{75}Ge_{25}$박막의 네가티브형 포토레지스토에 대하여 고찰하였다. 습식현상공정을 통해 대비도가 포지티브형인 경우 1.4였고 네가티브형인 경우 2.9를 나타내어 네가티브형인 경우가 미세선폭 조절능력이 더 우수함을 알 수 있었다. 표면사진으로부터 약 1.mu.m정도의 미세패턴을 얻었음을 확인할 수 있었다.
정홍배,조원주,구상모,Chung Hong-Bay,Cho Won-Ju,Ku Sang-Mo 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.10
Chalcogenide Phase change memory has the high performance necessary for next-generation memory, because it is a nonvolatile memory with high programming speed, low programming voltage, high sensing margin, low power consumption and long cycle duration. To minimize the power consumption and the program voltage, the new composition material which shows the better phase-change properties than conventional $Ge_2Sb_2Te_5$ device has to be needed by accurate material engineering. In the present work, we investigate the basic thermal and the electrical properties due to phase-change compared with chalcogenide-based new composition $Ge_1Se_1Te_2$ material thin film and convetional $Ge_2Sb_2Te_5$ PRAM thin film. The fabricated new composition $Ge_1Se_1Te_2$ thin film exhibited a successful switching between an amorphous and a crystalline phase by applying a 950 ns -6.2 V set pulse and a 90 ns -8.2 V reset pulse. It is expected that the new composition $Ge_1Se_1Te_2$ material thin film device will be possible to applicable to overcome the Set/Reset problem for the nonvolatile memory device element of PRAM instead of conventional $Ge_2Sb_2Te_5$ device.
Ag Nanocrystal이 적용된 Ge<sub>0.5</sub>Se<sub>0.5</sub>-based ReRAM 소자의 Uniformity 특성 향상에 대한 연구
정홍배,김장한,남기현,Chung, Hong-Bay,Kim, Jang-Han,Nam, Ki-Hyun 한국전기전자재료학회 2014 전기전자재료학회논문지 Vol.27 No.8
The resistive switching characteristics of resistive random access memory (ReRAM) based on amorphous $Ge_{0.5}Se_{0.5}$ thin films have been demonstrated by using Ti/Ag nanocrystals/$Ge_{0.5}Se_{0.5}$/Pt structure. Ag nanocrystals (Ag NCs) were spread on the amorphous $Ge_{0.5}Se_{0.5}$ thin film and they played the role of metal ions source. As a result, comparing the conventional Ag/$Ge_{0.5}Se_{0.5}$/Pt structure, this Ti/Ag NCs/$Ge_{0.5}Se_{0.5}$/Pt ReRAM device exhibits the highly uniform bipolar resistive switching (BRS) characteristics, such as the operating voltages, and the resistance values. At the same time, a stable DC endurance(> 100 cycles), and the excellent data retention (> $10^4$ sec) properties were found from the Ti/Ag NCs/$Ge_{0.5}Se_{0.5}$/Pt structured ReRAM device.
증착각도에 따른 As40Se15S35Ge10박막의 비정질상 변화에 관한 연구
정홍배(Hong-Bay Chung),김종빈(Jong-Bin Kim),이현용(Hyun-Yong Lee),박태성(Tae-Sung Park) 한국진공학회(ASCT) 1993 Applied Science and Convergence Technology Vol.2 No.1
본 연구에서는 광기록 매질 중 광유기효과가 큰 비정질 As_(40)Se_(15)S_(35)Ge_(10)박막의 증착각도 변화에 따른 구조 및 광학적 물질특성에 대해 고찰하였다. 준비된 bulk와 박막이 비정질상(Amorphous phase)임을 XRD 분석을 통해 확인하였다. 특히, 증착각도의 변화에 따른 비정질 As_(40)Se_(15)S_(35)Ge_(10)박막에서의 유리질 천이온도의 변화와 상분리 현상을 연구하였다. 유리질 천이온도의 확인은 DSC, DTA, TGA를 이용한 분석실험을 통해 수행하였다. 실험 결과 벌크의 유리질 천이 온도는 약 238℃였고, 0°, 60°, 80°로 증착된 박막은 각각 202℃, 229℃, 201℃였으며 80°로 증착된 박막의 경우 가장 낮은 값을 보였다. 또한 연속상과 분산상으로의 상 분리 현상은 편광현미경에 의한 광학구조분석과 SEM-EDS를 이용한 표면확인 및 성분분석으로 관찰하였다. In this paper, the physical and structural material properties were investigated in the obliquely-deposited amorphous As_(40)Se_(15)S_(35)Ge_(10) thin films having the large light-induced effects for optical recording media. The amorphous phase of bulk and thin films was observed by x-ray diffraction. Especially, we studied the change of the glass transition temperature(T_g) and the phenomena of the phase separation in amorphous As_(40)Se_(15)S_(35)Ge_(10) thin films as the result of deposition angles. Thermal analysis by DSC, DTA and TGA method was used for the determination of the T_g. The T_g of bulk was nearly 238℃ and those of 0°, 60° and 80° obliquely-deposited thin films were 202℃, 229℃, 201℃, respectively. As the result, it is found that the 80°-obliquely deposited thin film had the lowest T_g. And, the phase separation phenomena into dispersive and continuous phases were observed by the optical texture analysis with polarizing microscope and by the surface and composition analysis using SEM-EDS.
Ag가 도핑된 칼코게나이드 As₄?Ge₁?Se₁?S₃? 박막의 광분해, 광확산특성 및 홀로그래픽 격자형성
鄭鴻倍(Hong-Bay Chung) 대한전기학회 2006 전기학회논문지C Vol.55 No.10
In the present work, we investigated the photodissolution and photodiffusion effect on the interface of Ag/chalcogenide AS₄?Ge₁?Se₁?S₃? thin film by measuring the absorption coefficient, the optical density, the resistance change of Ag layer. It was found that the photodissolution/photodiffution ratio depends on the magnitude of photon energy absorbed in the chalcogenide thin film and the depth of photodiffution was proportional to the square root of the exposed time. Also, we have investigated the holographic grating formation with P-polarization states on chalcogenide As₄?Ge₁?Se₁?S₃? thin film and As₄?Ge₁?Se₁?S₃?/Ag double layer structure thin film. Holographic gratings have been formed using He-Ne laser (632.8 ㎚) which have a smaller energy than the optical energy gap, E<SUB>g opt</SUB> of the film, i. e., an exposure of sub-bandgap light (hv<E<SUB>g opt</SUB>) under P-polarization. As the results, we found that the diffraction efficiency on AS₄?Ge₁?Se₁?S₃?/Ag double layer structure thin film was more higher than that on single AS₄?Ge₁?Se₁?S₃? thin film. Also, we obtained that the maximum diffraction efficiency was 0.27%, 1,000 sec on AS₄?Ge₁?Se₁?S₃? (1 ㎛)/Ag (10 ㎚) double layer structure thin film by (P:P) polarized recording beam. It will offer lots of information for the photodoping mechanism and the analyses of chalcogenide thin films.