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불순물 활성화 열처리가 MOS 캐패시터의 게이트 전극과 산화막의 특성에 미치는 효과
조원주,김응수 대한전자공학회 1998 電子工學會論文誌, D Vol.d35 No.10
MOS 캐패시터의 게이트 전극을 비정질 상태의 실리콘으로 형성하여 GOI(Gate Oxide Integrity)특성에 미치는 불순물 활성화 열처리의 효과를 조사하였다. LPCVD(Low Pressure Chemical Vapor Deposition) 방법으로 증착한 비정질 실리콘 게이트 전극은 활성화 열처리에 의하여 다결정 실리콘 상태로 구조가 변화하며, 불순물 원자의 활성화가 충분히 이루어졌다. 또한, 비정질 상태의 게이트 전극은 커다란 압축 응력(compressive stress)을 가지지만, 활성화 열처리 온도가 700℃에서 900℃로 증가함에 따라서 응력이 완화되었고 게이트 전극의 저항도 감소하는 특성을 보였다. 또한 얇은 게이트 산화막의 신뢰성 및 산화막의 계면특성은 활성화 열처리 온도에 크게 의존하고 있었다. 900℃에서 활성화 열처리를 한 경우가 700℃에서 열처리한 경우보다 산화막내에서의 전하 포획 특성이 개선되었으며, 산화막의 신뢰성이 향상되었다. 특히, TDDB 방법으로 예측한 게이트 산화막의 수명은 700℃의 열처리에서는 3×10/sup 10/초였지만, 900℃에서의 열처리에서는 2×10/sup 12/초로 현저하게 개선되었다. 그리고, 산화막 계면에서의 계면 전하 밀도는 게이트의 응력 완화에 따라서 개선되었다. The effects of dopant activation anneal on GOI (Gate Oxide Integrity) of MOS capacitor with amorphous silicon gate electrode were investigated. It was found that the amorphous silicon gate electrode was crystallized and the dopant atoms were sufficiently activated by activation anneal. The mechanical stress of gate electrode that reveals large compressive stress in amorphous state, was released with increase of anneal temperature from $700^{\circ}C$ to 90$0^{\circ}C$. The resistivity of gate electrode polycrystalline silicon film is decreased by the increase of anneal temperature. The reliability of thin gate oxide and interface properties between oxide and silicon substrate greatly depends on the activation anneal temperature. The charge trapping characteristics as well as oxide reliability are improved by the anneal of 90$0^{\circ}C$ compare to that of $700^{\circ}C$ or 80$0^{\circ}C$. Especially, the lifetimes of the thin gate oxide estimated by TDDB method is 3$\times$10$^{10}$ for the case of $700^{\circ}C$ anneal, is significantly increased to 2$\times$10$^{12}$ for the case of 90$0^{\circ}C$ anneal. Finally, the interface trap density is reduced with relaxation of mechanical stress of gate electrode.
Bias Stress Instability of Double-Gate a-IGZO TFTs on Polyimide Substrate
조원주,안민주 한국물리학회 2017 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.71 No.6
In this study, flexible double-gate thin-film transistor (TFT)-based amorphous indium-galliumzinc- oxide (a-IGZO) was fabricated on a polyimide substrate. Double-gate operation with connected front and back gates was compared with a single-gate operation. As a result, the double-gate a- IGZO TFT exhibited enhanced electrical characteristics as well as improved long-term reliability. Under positive- and negative-bias temperature stress, the threshold voltage shift of the double-gate operation was much smaller than that of the single-gate operation.
조원주 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.51 No.III
The solid-phase diffusion (SPD) process, which is suitable for the fabrication of fin field-effect-transistors (FinFETs) with gate length sub-100 nm, was developed for formation of ultra-shallow and abrupt $n^+$-$p$ junctions. Arsenic-doped spin-on-glass (SOG) or phosphorus-doped SOG films were used as $n$-type dopant sources, and rapid thermal annealing (RTA) was performed to diffuse dopants to the source/drain extensions of FinFETs. Arsenic-doped SOG showed a more abrupt doping profile, a higher doping concentration at the surface, and a shallower junction depth than phosphorus-doped SOG. $N^+$-$p$ junction diodes fabricated by the SPD process showed ideal one-sided abrupt-junction properties. Especially, FinFETs with a gate length of 20 nm were successfully fabricated by using the arsenic-SPD process to control the lateral source/drain junction depth and showed excellent short-channel properties.
Poly(lactic acid)와 Nanomer<sup>®</sup>I.44P를 이용한 친환경 나노복합체 개발
조원주,황기,김준태,Cho, Won-Ju,Whang, Key,Kim, Jun Tae 한국포장학회 2014 한국포장학회지 Vol.20 No.3
Biodegradable nanocomposites were fabricated with poly (lactic acid) (PLA) and Nanomer$^{(R)}$ I.44P using ultrasonication (US). Processing conditions were optimized to obtain the maximum tensile properties of the nanocomposites. Poly (ethylene glycol) (PEG) was used as a plasticizer to avoid the brittleness of nanocompsoties. In order to disperse nanoclay into the PLA matrix, PEG and Nanomer$^{(R)}$ I.44P were firstly mixed and dispersed in the chloroform and followed by ultrasonication for 1 min With 10% PEG 400, tensile stress and Young's modulus of the nanocomposites decreased from 53.5 MPa and 2225 MPa to 37.0 MPa and 1757 MPa, respectively, while the elongation was increased from 4% to 21%. Tensile stress, Young's modulus, and elongation of nanocomposites were also increased with nanoclay concentration up to 2% (w/w) and were decreased with further increase in the nanoclay concentration. Transmittance of nanocomposites were significantly decreased from 62.5% for pure PLA film to 7.8% for 5% nanoclay containing nanocomposites. Water vapor permeability of the nanocomposites was also significantly decreased with nanoclay concentration and the minimum WVP of $3.5{\times}10^{-11}g{\cdot}m/m^2{\cdot}s{\cdot}Pa$ was obtained with 5% (w/w) nanoclay concentration. The PLA/Nanomer$^{(R)}$ I.44P nanocomposites showed a great potential as a environmental friendly food packaging material. PLA와 nanoclay인 Nanomer$^{(R)}$ I.44P를 이용한 환경 친화적인 nanocomposites을 개발하였다. PLA/Nanomer$^{(R)}$ I.44P nanocomposites의 상온 건조 후 잔존하는 용매를 제거하기 위해 진공건조를 하였으며, 진공건조 시간이 8시간 까지는 신장율이 크게 감소하였으며, 그 이후에는 유의적인 차이가 없었다. Nanoclay가 PLA matrix내에서 균일하게 분산시키기 위해 초음파 처리를 하였으며, 초음파 처리시간이 5분까지는 인장강도 및 영모듈러스가 증가하는 경향을 보였으나 5분 이상의 초음파 처리에서는 시간이 증가함에 따라 인장 특성도 점차 감소하였고, 특히 15분 이상 초음파 처리를 하였을 때에는 nanoclay가 뭉치는 현상이 관찰 되었다. Nanoclay의 양이 증가할수록 nanocomposites의 가시광선 영역에서의 투과성(trasmittance)은 62.5%에서 7.8%로 크게 감소하였다. Water vapor permeability (WVP)는 nanoclay의 첨가량에 따라 감소하는 경향을 보이며, 5%의 nanoclay 첨가 시 $3.5{\times}10^{-11}g{\cdot}m/m^2{\cdot}s{\cdot}Pa$로 control에 비해 약 43%가 감소하였다.