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Pseudo MOSFET을 이용한 Nano SOI 웨이퍼의 전기적 특성분석
배영호,김병길,권경욱,Bae, Young-Ho,Kim, Byoung-Gil,Kwon, Kyung-Wook 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.12
The Pseudo MOSFET measurements technique has been used for the electrical characterization of the nano SOI wafer. Silicon islands for the Pseudo MOSFET measurements were fabricated by selective etching of surface silicon film with dry or wet etching to examine the effects of the etching process on the device properties. The characteristics of the Pseudo MOSFET were not changed greatly in the case of thick SOI film which was 205 nm. However the characteristics of the device were dependent on etching process in the case of less than 100 nm thick SOI film. The sub 100 nm SOI was obtained by thinning the silicon film of standard thick SOI wafer. The thickness of SOI film was varied from 88 nm to 44 nm by chemical etching. The etching process effects on the properties of pseudo MOSFET characteristics, such as mobility, turn-on voltage, and drain current transient. The etching Process dependency is greater in the thinner SOI wafer.
SIMOX SOI 제조시 산소석출물의 거동과 전기적 특성에 미치는 영향
배영호(Young-Ho Bae),정욱진(Woo-Jin Chung),금광일(Kwang-Il Kim),권영규(Young-Kyu Kwon),금범만(Bum Man Kim),조찬변(Chan-Sub Cho),이종현(Jong-Hyun Lee) 한국진공학회(ASCT) 1992 Applied Science and Convergence Technology Vol.1 No.1
2×10^(18)ions/㎠의 산소이온이 180keV로 주입된 실리콘웨어퍼를 1250℃에서 6시간 동안 질소분위기로 열처리하여 SIMOX SOI 구조를 제조하였다. 이온주업 후 열처리 과정에서 산소원자의 거동을 AES와 TEM으로 분석하였고, SRP법으로 시료의 전기적 특성을 조사였다. 그 결과 고온의 열처리 후에 SOI층 내에 산소석출물이 존재하고 있음을 관찰할 수 있었으며 이들은 SOI층의 전기적 특성에 심각한 영향을 미침을 알았다. 그리고 열처리과정에서 SOI층 내 산소농도의 감소는 이들 석출물의 성장소멸기구에 지배됨을 알았다. SIMOX SOI structures were formed by oxygen ion implantation with a dose of 2×10^(18) ions/㎠ at 180 keV and post-implantation annealing at 1250℃ for 6 hours in nitrogen ambient. The oxygen redistribution process during post-implantation annealing was examined by AES and TEM. The electrical property of the structure was investigated by SRP method. We could find oxygen precipitates in SOI layer after high temperature annealing. The influence of the precipitates to the electrical property of the SOI layer was discussed. And the limiting factor to the decrease of the precipitates during post-implantation annealing was discussed also.